公开(公告)号：US09126242B2

公开(公告)日：2015-09-08

申请号：US13704767

申请日：2011-03-07

申请人： Yasushi Kurosawa ,  Kyoji Oguro ,  Shinichi Kurotani ,  Shigeyoshi Netsu

发明人： Yasushi Kurosawa ,  Kyoji Oguro ,  Shinichi Kurotani ,  Shigeyoshi Netsu

IPC分类号： C01B33/035 ,  B08B3/04 ,  B08B9/08 ,  B08B3/10 ,  F28G13/00 ,  F26B5/12

CPC分类号： F26B5/042 ,  B08B3/04 ,  B08B3/10 ,  C01B33/035 ,  C23C16/4407 ,  F26B5/12 ,  F28G13/00

摘要： A bell jar includes a metallic bell jar (1), and a metallic base plate (2) on which the bell jar (1) is placed, and packing (3) seals an inside of a container. To the base plate (2), a pressure gauge (4), a gas introduction line (5), and a gas discharge line (6) are connected so as to allow monitoring of internal pressure of the bell jar (1) and introduction and discharge of a gas. A vacuum pump (7) is provided in a path of the gas discharge line (6), and the vacuum pump (7) reduces internal pressure of the bell jar so as to be lower than vapor pressure of water. The vacuum pump (7) reduces the internal pressure of the bell jar so as to be lower than vapor pressure of water, thereby efficiently removing moisture, and completing drying of the bell jar in a short time.

摘要翻译： 钟形瓶包括金属钟形瓶（1）和金属底板（2），其上放置钟形罩（1），并且包装（3）密封容器的内部。 连接到基板（2）上的压力计（4），气体引入管线（5）和气体排出管线（6），以便监测钟罩（1）的内部压力和引入 并排出气体。 真空泵（7）设置在气体排出管路（6）的路径中，真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力。 真空泵（7）将钟罩的内部压力降低到低于水的蒸汽压力，从而有效地去除水分，并在短时间内完成钟罩的干燥。

公开(公告)号：US20120207662A1

公开(公告)日：2012-08-16

申请号：US13496060

申请日：2010-07-20

申请人： Shigeyoshi Netsu ,  Kyoji Oguro ,  Takaaki Shimizu ,  Yasushi Kurosawa ,  Fumitaka Kume

发明人： Shigeyoshi Netsu ,  Kyoji Oguro ,  Takaaki Shimizu ,  Yasushi Kurosawa ,  Fumitaka Kume

IPC分类号： C01B33/027 ,  B01J19/00

CPC分类号： H01L21/02595 ,  B01J19/02 ,  B01J2219/0236 ,  C01B33/035 ,  C23C16/24 ,  C23C16/4411 ,  C23C16/463 ,  C23C16/52 ,  H01L21/02532 ,  H01L21/02636 ,  Y02P20/124 ,  Y02P20/129

摘要： The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.

摘要翻译： 本发明提供了一种技术，通过该技术可以降低用于冷却反应器的冷却剂的热量，并且可以减少在反应器内沉积多晶硅时来自反应器的内壁的掺杂剂杂质的污染，以产生高纯度 多晶硅。 通过使用温度高于标准沸点的热水15作为供给到反应器10的冷却剂，反应器内壁的温度保持在不高于370℃的温度。另外， 通过设置在冷却剂罐20中的压力控制部来减少要回收的热水15，以产生蒸汽。 因此，一部分热水作为蒸汽被取出到外部，并且再次用作另一种应用的加热源。

公开(公告)号：US20130102092A1

公开(公告)日：2013-04-25

申请号：US13808404

申请日：2011-07-04

申请人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

发明人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  C01B33/035 ,  G01M7/08 ,  G01N29/045 ,  G01N29/12 ,  G01N29/4418 ,  G01N29/4454 ,  G01N29/46 ,  G01N2291/0234 ,  G01N2291/2626 ,  G01N2291/2697 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).

摘要翻译： 用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。 然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。 此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。 获得多晶硅棒的长度（L）与峰值频率f之间的关系，并且基于峰值频率f是否在f> =的范围内来确定多晶硅棒的坚固度， 1,471 / L（A区）。

公开(公告)号：US09006002B2

公开(公告)日：2015-04-14

申请号：US13808404

申请日：2011-07-04

申请人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

发明人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

IPC分类号： H01L21/00 ,  H01L21/66 ,  G01R31/26 ,  C01B33/035 ,  G01N29/04 ,  G01N29/44 ,  G01N29/46 ,  G01N29/12

CPC分类号： H01L22/12 ,  C01B33/035 ,  G01M7/08 ,  G01N29/045 ,  G01N29/12 ,  G01N29/4418 ,  G01N29/4454 ,  G01N29/46 ,  G01N2291/0234 ,  G01N2291/2626 ,  G01N2291/2697 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).

摘要翻译： 用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。 然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。 此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。 获得多晶硅棒的长度（L）与峰值频率f之间的关系，根据峰值频率f是否在f≥1.471的范围内来确定多晶硅棒的坚固度 / L（区域A）。

公开(公告)号：US20120175613A1

公开(公告)日：2012-07-12

申请号：US13496693

申请日：2010-07-21

申请人： Shigeyoshi Netsu ,  Junichi Okada ,  Fumitaka Kume

发明人： Shigeyoshi Netsu ,  Junichi Okada ,  Fumitaka Kume

IPC分类号： H01L29/04 ,  H01L21/205

CPC分类号： C01B33/035 ,  C01B33/037

摘要： The present invention provides a clean and high-purity polycrystalline silicon mass having a small content of chromium, iron, nickel, copper, and cobalt in total, which are heavy metal impurities that reduce the quality of single-crystal silicon. In the vicinity of an electrode side end of a polycrystalline silicon rod obtained by the Siemens method, the total of the chromium, iron, nickel, copper, and cobalt concentrations is high. Accordingly, before a crushing step of a polycrystalline silicon rod 100, a removing step of removing at least 70 mm of a polycrystalline silicon portion from the electrode side end of the polycrystalline silicon rod 100 extracted to the outside of a reactor is provided. Thereby, the polycrystalline silicon portion in which the total of the chromium, iron, nickel, copper, and cobalt concentrations in a bulk is not less than 150 ppta can be removed.

摘要翻译： 本发明提供了一种清洁，高纯度的多晶硅质量体，它们总共含有少量的铬，铁，镍，铜和钴，这是降低单晶硅质量的重金属杂质。 在通过西门子方法获得的多晶硅棒的电极侧端附近，铬，铁，镍，铜和钴的总量高。 因此，在多晶硅棒100的破碎步骤之前，提供从提取到反应器外部的多晶硅棒100的电极侧端部去除至少70mm的多晶硅部分的去除步骤。 因此，可以除去其中大体积中铬，铁，镍，铜和钴的总浓度不低于150ppta的多晶硅部分。

公开(公告)号：US20090057840A1

公开(公告)日：2009-03-05

申请号：US12263867

申请日：2008-11-03

申请人： Shigeyoshi Netsu ,  Hisashi Masumura

发明人： Shigeyoshi Netsu ,  Hisashi Masumura

IPC分类号： H01L23/00

CPC分类号： H01L21/02024 ,  B24B37/345

摘要： The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof that is strongly required recently, and a wafer. In a polishing process for making a mirror surface of the wafer, a back surface of the wafer is polished to produce a reference plane thereof.

摘要翻译： 本发明提供一种晶片制造方法和晶片抛光装置，其能够控制晶片周边的下垂和最近需要强烈要求的纳米拓扑学值的改善以及晶片。 在用于制造晶片的镜面的抛光工艺中，抛光晶片的后表面以产生其参考平面。

公开(公告)号：US20050085017A1

公开(公告)日：2005-04-21

申请号：US10502389

申请日：2003-01-22

申请人： Tatsuo Ito ,  Shigeyoshi Netsu ,  Masashi Ichikawa ,  Nobuhiro Ohara

发明人： Tatsuo Ito ,  Shigeyoshi Netsu ,  Masashi Ichikawa ,  Nobuhiro Ohara

IPC分类号： G05B19/418 ,  G06Q10/00 ,  G06Q50/00 ,  G06Q50/04 ,  H01L21/02 ,  H01L21/48

CPC分类号： G06Q10/06 ,  G05B19/418 ,  G05B2219/32024 ,  G06Q10/087 ,  Y02P90/02 ,  Y02P90/18

摘要： The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process. The present invention also provides a method for receiving an order for manufacture of a semiconductor wafer comprising a step of connecting a device maker with a customer computer in a wafer maker, a step wherein the customer computer receives information of a device manufacturing process and a step of selecting a wafer manufacturing process corresponding thereto, and provides a system for receiving an order for manufacture of a semiconductor wafer comprising a client terminal in a device maker and a customer computer in a wafer maker wherein information of a device manufacturing process is inputted into the client terminal and is sent, the customer computer receives the information of the device manufacturing process, and a wafer manufacturing process corresponding thereto is selected. Thereby, there can be provided a method for manufacturing a semiconductor wafer, a method for receiving an order for manufacture of a semiconductor wafer, and a system for receiving an order wherein a wafer suitable for a device manufacturing process in a device maker is supplied.

摘要翻译： 本发明提供一种制造半导体晶片的方法，包括以下步骤：根据所选择的晶片制造工艺获得器件制造工艺的信息，选择与之对应的晶片制造工艺，以及制造半导体晶片。 本发明还提供了一种用于接收制造半导体晶片的顺序的方法，包括在晶片制造机中将设备制造商与客户计算机连接的步骤，其中客户计算机接收设备制造过程的信息和步骤 选择与之对应的晶片制造工艺，并且提供一种用于接收制造半导体晶圆的系统的系统，该半导体晶片包括在晶片制造商中的设备制造商和客户计算机中的客户终端，其中将器件制造过程的信息输入到 客户终端被发送，客户计算机接收设备制造过程的信息，并且选择与其对应的晶片制造过程。 因此，可以提供一种用于制造半导体晶片的方法，用于接收半导体晶片的制造顺序的方法，以及用于接收其中提供适合于器件制造商中的器件制造工艺的晶片的顺序的系统。

公开(公告)号：US5725753A

公开(公告)日：1998-03-10

申请号：US638233

申请日：1996-04-26

申请人： Yasuyuki Harada ,  Shigeyoshi Netsu

发明人： Yasuyuki Harada ,  Shigeyoshi Netsu

IPC分类号： B08B3/10 ,  C02F1/36 ,  C02F1/461 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B08B3/10 ,  C02F1/4618 ,  H01L21/67057 ,  C02F1/36 ,  C02F2001/4619 ,  C02F2201/4611 ,  C02F2201/46115 ,  C02F2201/46195

摘要： An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an alkali is replaced with a cleaning treatment with a temporarily alkaline pure water which is produced electrolytically by the application of a DC voltage between a cathode and an anode bonded to the surfaces of a hydrogen-ion exchange membrane so that the alkaline cleaning treatment can be performed under mild conditions so as to eliminate the troubles due to formation of COPs unavoidable in the conventional process. In addition, the pure water rinse following the alkali cleaning of the wafers before transfer to the succeeding acidic cleaning step can be omitted to greatly contribute to the improvement of productivity. The apparatus used therefor comprises a rectangular vessel divided into a central cathode compartment, in which the wafers are held in a vertical disposition within an up-flow of pure water, and a pair of anode compartments by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which a cathode plate and anode plate are bonded.

摘要翻译： 在半导体硅晶片的清洗处理中提出了一种改进，其中用碱性水溶液进行清洁的常规步骤被用临时碱性纯水清洗处理代替，所述临时碱性纯水通过在 结合到氢离子交换膜的表面的阴极和阳极，使得碱性清洁处理可以在温和条件下进行，以消除由于形成常规方法中不可避免的COP的麻烦。 此外，在转移到后续的酸性清洁步骤之前，在晶片的碱清洗之后的纯水冲洗可以被省略，以极大地有助于提高生产率。 所使用的装置包括分成中央阴极室的矩形容器，其中晶片在纯水的上升流中保持垂直布置，并且一对阳极室通过用一对氢离子交换 膜，其两侧粘合阴极板和阳极板。

公开(公告)号：US6099748A

公开(公告)日：2000-08-08

申请号：US207194

申请日：1998-12-08

申请人： Shigeyoshi Netsu ,  Bee Chin Lim ,  Yee Ping Yap

发明人： Shigeyoshi Netsu ,  Bee Chin Lim ,  Yee Ping Yap

IPC分类号： C30B29/06 ,  C09K13/02 ,  C30B33/10 ,  H01L21/306 ,  B44C1/22 ,  C09K13/00 ,  C09K13/06

CPC分类号： H01L21/02019 ,  C09K13/02 ,  H01L21/30604

摘要： There is disclosed a silicon wafer etching method in which etching is performed through use of an etchant. The etchant is an alkali aqueous solution which contains an alkali component in a concentration ranging from 50.6% to 55.0% by weight. The alkali component is preferably sodium hydroxide. The silicon wafer etching method can reduce not only surface roughness but also dispersion thereof.

摘要翻译： 公开了通过使用蚀刻剂进行蚀刻的硅晶片蚀刻方法。 蚀刻剂是含有浓度为50.6重量％〜55.0重量％的碱成分的碱性水溶液。 碱成分优选为氢氧化钠。 硅晶片蚀刻方法不仅可以减少表面粗糙度，而且可以降低其分散性。

公开(公告)号：US5733434A

公开(公告)日：1998-03-31

申请号：US648696

申请日：1996-05-16

申请人： Yasuyuki Harada ,  Shigeyoshi Netsu ,  Shouichi Miura

发明人： Yasuyuki Harada ,  Shigeyoshi Netsu ,  Shouichi Miura

IPC分类号： B01D61/46 ,  B01J19/10 ,  B08B3/10 ,  B08B3/12 ,  B08B7/00 ,  C02F1/36 ,  C02F1/461 ,  C30B29/06 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308

CPC分类号： H01L21/02052 ,  B08B3/12 ,  B08B7/00 ,  C02F1/4618 ,  H01L21/67057 ,  C02F1/36 ,  C02F2001/46185 ,  C02F2201/4611 ,  C02F2201/46115 ,  C02F2201/46195

摘要： An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an acid is replaced with a cleaning treatment with a temporarily acidic pure water which is produced electrolytically by the application of a DC voltage between an anode and a cathode bonded to the surfaces of a hydrogen-ion exchange membrane so that the acidic cleaning treatment can be performed under mild conditions so as to eliminate the troubles unavoidable in the conventional process. The apparatus used therefor comprises a rectangular vessel partitioned into a central anode compartment, in which the wafers are held in a vertical disposition within an upflow of pure water, and a pair of cathode compartments on both sides of the anode compartment by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which an anode plate and a cathode plate are bonded.

摘要翻译： 在半导体硅晶片的清洗处理中提出了一种改进，其中用酸性水溶液进行清洁的常规步骤被用临时酸化的纯水进行的清洁处理代替，所述临时酸性纯水通过在 阳极和阴极结合到氢离子交换膜的表面，使得酸性清洁处理可以在温和条件下进行，以消除常规方法中不可避免的麻烦。 使用的装置包括分隔成中央阳极室的矩形容器，其中晶片在纯水的上流中保持垂直布置，并且通过一对分隔在阳极室的两侧上的一对阴极室 的氢离子交换膜，其两侧粘合有阳极板和阴极板。