公开(公告)号：US09647155B1

公开(公告)日：2017-05-09

申请号：US14022092

申请日：2013-09-09

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/102 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/18

CPC分类号： H01L31/035236 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/09 ,  H01L31/101 ,  H01L31/1844 ,  Y02E10/544

摘要： The disclosure provides a photo-detection device for use in long-wave infrared detection and a method of fabrication. The device comprises a GaSb substrate, a photo absorbing layer comprising InAs/InAsSb superlattice type-II, a barrier layer comprising AlAsSb, and a contact layer comprising InAs/InAsSb superlattice type-II. The barrier layer is configured to allow minority carrier holes current flow while blocking majority carrier electrons current flow between the photo-absorbing and contact layers.The disclosure further provides a method of producing the photo-detector using photolithography which includes selective etching of the contact layer that stops on the top of the barrier so no etching is made to the barrier layer so the barrier may operate as a passivator too.The disclosure presents an x-ray and photoluminescence results for InAs/InAsSb superlattice type-II material. Also present a measurement of a single element, Long-Wave photo-detector, showing very low dark current and very high Quantum efficiency, as predicted.

公开(公告)号：US20110309410A1

公开(公告)日：2011-12-22

申请号：US13167992

申请日：2011-06-24

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/1832 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1844 ,  Y02E10/544 ,  Y02P70/521

摘要： A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

公开(公告)号：US20100159631A1

公开(公告)日：2010-06-24

申请号：US12656739

申请日：2010-02-16

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0352

CPC分类号： H01L31/1832 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1844 ,  Y02E10/544

摘要： A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

公开(公告)号：US11462657B1

公开(公告)日：2022-10-04

申请号：US17181669

申请日：2021-02-22

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/18 ,  H01L31/10 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/0296 ,  H01L27/146 ,  B82Y20/00 ,  G01J5/06 ,  G01J5/20 ,  H01L31/101 ,  G01J5/061 ,  H01L23/38 ,  G01J5/00

摘要： Photo-detector comprising: photo absorbing layer exhibiting a valence band energy level; a barrier layer, first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers between the photo absorbing layer and contact area, and block the flow of thermalized majority carriers between the photo absorbing layer and contact area. The photoabsorber layer extends past the one or more individual sections of the contact layer in the direction across the photodetector, and is monolithically provided for each of the individuals detector elements.

公开(公告)号：US11264528B2

公开(公告)日：2022-03-01

申请号：US15679487

申请日：2017-08-17

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/18 ,  H01L31/0296 ,  H01L31/10 ,  G01J5/06 ,  G01J5/20 ,  H01L27/146 ,  H01L31/101 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/0304 ,  G01J5/061 ,  H01L23/38 ,  G01J5/00

摘要： A photodetector comprising a photoabsorber, comprising a doped semiconductor, a contact layer comprising a doped semiconductor and a barrier layer comprising a charge carrier compensated semiconductor, the barrier layer compensated by doping impurities such that it exhibits a valence band energy level substantially equal to the valence band energy level of the photo absorbing layer and a conduction band energy level exhibiting a significant band gap in relation to the conduction band of the photo absorbing layer, the barrier layer disposed between the photoabsorber and contact layers. The relationship between the photo absorbing layer and contact layer valence and conduction band energies and the barrier layer conduction and valance band energies is selected to facilitate minority carrier current flow while inhibiting majority carrier current flow between the contact and photo absorbing layers.

公开(公告)号：USRE48693E1

公开(公告)日：2021-08-17

申请号：US16503537

申请日：2019-07-04

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L27/146 ,  H01L23/34 ,  G01J5/06

摘要： A IDCA system combining thermo-electric cooler (TEC) and an internal nBn photo-detector having a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; and a contact layer comprising a doped semiconductor. A barrier layer is disposed between the photo absorbing layer and the contact layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

公开(公告)号：US09766130B2

公开(公告)日：2017-09-19

申请号：US14822433

申请日：2015-08-10

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： G01J5/20 ,  G01J5/06 ,  H01L27/146 ,  H01L23/38

CPC分类号： G01J5/061 ,  H01L23/38 ,  H01L27/14669 ,  H01L2924/0002 ,  H01L2924/00

摘要： A IDCA system combining thermo-electric cooler (TEC) and an internal nBn photo-detector having a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; and a contact layer comprising a doped semiconductor. A barrier layer is disposed between the photo absorbing layer and the contact layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

公开(公告)号：US20150372035A1

公开(公告)日：2015-12-24

申请号：US14822433

申请日：2015-08-10

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L27/146

CPC分类号： G01J5/061 ,  H01L23/38 ,  H01L27/14669 ,  H01L2924/0002 ,  H01L2924/00

摘要： A IDCA system combining thermo-electric cooler (TEC) and an internal nBn photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

摘要翻译： 一种结合热电冷却器（TEC）和内部nBn光检测器的IDCA系统，包括：包含呈现价带能级的n掺杂半导体的光吸收层; 阻挡层，邻近光吸收层的第一侧的阻挡层的第一侧，阻挡层呈现基本上等于光吸收层的掺杂半导体的价带能级的价带能级; 以及包括掺杂半导体的接触区域，所述接触区域与所述阻挡层的与所述第一侧相对的第二侧相邻，所述阻挡层具有足够的厚度和导电带隙，以防止多数载流子从所述光吸收层的隧穿到 接触区域并阻挡热吸收多数载流子从光吸收层到接触区域的流动。 或者，使用p掺杂半导体，并且阻挡层和光吸收层的电导带能级被均衡。

公开(公告)号：US08003434B2

公开(公告)日：2011-08-23

申请号：US12656739

申请日：2010-02-16

申请人： Shimon Maimon

发明人： Shimon Maimon

IPC分类号： H01L31/00

CPC分类号： H01L31/1832 ,  B82Y20/00 ,  H01L31/02966 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1844 ,  Y02E10/544

摘要： A photo-detector comprising: a photo absorbing layer comprising an n-doped semiconductor exhibiting a valence band energy level; a barrier layer, a first side of the barrier layer adjacent a first side of the photo absorbing layer, the barrier layer exhibiting a valence band energy level substantially equal to the valence band energy level of the doped semiconductor of the photo absorbing layer; and a contact area comprising a doped semiconductor, the contact area being adjacent a second side of the barrier layer opposing the first side, the barrier layer exhibiting a thickness and a conductance band gap sufficient to prevent tunneling of majority carriers from the photo absorbing layer to the contact area and block the flow of thermalized majority carriers from the photo absorbing layer to the contact area. Alternatively, a p-doped semiconductor is utilized, and conductance band energy levels of the barrier and photo absorbing layers are equalized.

摘要翻译： 一种光电检测器，包括：光吸收层，其包含呈现价带能级的n掺杂半导体; 阻挡层，邻近光吸收层的第一侧的阻挡层的第一侧，阻挡层呈现基本上等于光吸收层的掺杂半导体的价带能级的价带能级; 以及包括掺杂半导体的接触区域，所述接触区域与所述阻挡层的与所述第一侧相对的第二侧相邻，所述阻挡层具有足够的厚度和导电带隙，以防止多数载流子从所述光吸收层的隧穿到 接触区域并阻挡热吸收多数载流子从光吸收层到接触区域的流动。 或者，使用p掺杂半导体，并且阻挡层和光吸收层的电导带能级被均衡。