公开(公告)号：US20110044480A1

公开(公告)日：2011-02-24

申请号：US12939748

申请日：2010-11-04

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

IPC: H04R19/01

CPC classification number: H04R19/016 ,  B81B2201/0257 ,  B81C1/00944 ,  B81C2201/112 ,  H04R19/005

Abstract: An electret condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electret film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract translation: 驻极体电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为驻极体膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。

公开(公告)号：US07853027B2

公开(公告)日：2010-12-14

申请号：US10591597

申请日：2005-02-07

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

IPC: H04R25/00

CPC classification number: H04R19/016 ,  B81B2201/0257 ,  B81C1/00944 ,  B81C2201/112 ,  H04R19/005

Abstract: An electric condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electric film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract translation: 电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为电膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。

公开(公告)号：US20090116675A1

公开(公告)日：2009-05-07

申请号：US12092762

申请日：2006-08-03

Applicant: Yuichi Miyoshi

Inventor： Yuichi Miyoshi

IPC: H04R19/04 ,  G01P15/125 ,  H01L21/306

CPC classification number: G01P15/125 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  G01P15/0802 ,  G01P2015/084 ,  H04R19/005

Abstract: A diaphragm (14) is formed using MEMS technology. The diaphragm (14) has a hinge structure, and at least one of a hinge upper corner portion and a hinge lower corner portion of the diaphragm (14) is rounded.

Abstract translation: 使用MEMS技术形成隔膜（14）。 隔膜（14）具有铰链结构，并且隔膜（14）的铰链上角部和铰链下角部中的至少一个是圆形的。

公开(公告)号：US20070189555A1

公开(公告)日：2007-08-16

申请号：US10591597

申请日：2005-02-07

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

IPC: H04R25/00

CPC classification number: H04R19/016 ,  B81B2201/0257 ,  B81C1/00944 ,  B81C2201/112 ,  H04R19/005

Abstract: An electric condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electric film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract translation: 电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为电膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109。 在气隙109中暴露的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。

公开(公告)号：US20060027571A1

公开(公告)日：2006-02-09

申请号：US11187923

申请日：2005-07-25

Applicant: Yuichi Miyoshi ,  Kou Sugano ,  Yasuo Satoh

Inventor： Yuichi Miyoshi ,  Kou Sugano ,  Yasuo Satoh

IPC: H05B6/80

CPC classification number: H05B6/802

Abstract: Microwaves are applied to pure water stored in a pure water tank past at least one of the top section of the sealed pure water tank, the side sections thereof and the bottom section thereof, thereby heating the pure water in a non-contact manner.

Abstract translation: 将微波应用于通过密封纯水槽的顶部部分，其侧部和底部中的至少一个上储存在纯水槽中的纯水，从而以非接触的方式加热纯水。

公开(公告)号：US20050139230A1

公开(公告)日：2005-06-30

申请号：US11017699

申请日：2004-12-22

Applicant: Tsuyoshi Miyata ,  Yuichi Miyoshi ,  Yoshiaki Namioka

Inventor： Tsuyoshi Miyata ,  Yuichi Miyoshi ,  Yoshiaki Namioka

IPC: H01L21/304 ,  B08B3/00 ,  B08B3/08 ,  C11D7/00 ,  C11D7/02 ,  C11D7/08 ,  C11D11/00 ,  H01L21/302 ,  H01L21/306

CPC classification number: H01L21/02052 ,  B08B3/08 ,  C11D7/02 ,  C11D7/08 ,  C11D11/0047

Abstract: A method for cleaning a semiconductor wafer according to the present invention includes the steps of: removing particles on a semiconductor wafer with an alkaline chemical solution to clean the wafer; neutralizing a surface charge of the semiconductor wafer with a weak acid cleaning solution; and removing residual metal impurities on the semiconductor wafer with an acid chemical solution to clean the wafer. The surface of the semiconductor wafer is neutralized and the HPM treatment is then performed with the semiconductor wafer having no charge. As a result, the surface of the semiconductor wafer can be made extremely clean without attaching metal impurities thereto.

Abstract translation: 根据本发明的用于清洁半导体晶片的方法包括以下步骤：用碱性化学溶液去除半导体晶片上的颗粒以清洁晶片; 用弱酸清洗溶液中和半导体晶片的表面电荷; 并用酸化学溶液去除半导体晶片上的残余金属杂质以清洁晶片。 半导体晶片的表面被中和，然后用无电荷的半导体晶片进行HPM处理。 结果，半导体晶片的表面可以非常清洁，而不会附着金属杂质。

公开(公告)号：US06214126B1

公开(公告)日：2001-04-10

申请号：US08744688

申请日：1996-11-07

Applicant: Yuichi Miyoshi ,  Michikazu Matsumoto ,  Teruhito Ohnishi

Inventor： Yuichi Miyoshi ,  Michikazu Matsumoto ,  Teruhito Ohnishi

IPC: C23G2300

CPC classification number: H01L21/02052 ,  Y10S134/902

Abstract: A silicon substrate is cleaned using a liquid mixture primarily containing ammonia and hydrogen peroxide. A liquid containing ammonia is added to the liquid mixture to maintain the concentration of ammonia in the liquid mixture applied to the silicon substrate in the range between 2.5 wt. % and 3.5 wt. %. The liquid containing ammonia is added to the liquid mixture at a constant time interval. The constant time interval is set to be equal to a time period which is necessary for the concentration of ammonia in the liquid mixture to change from a first concentration level of no more than 3.5 wt. % to a second concentration level of no less than 2.5 wt. %, the second concentration level being lower than the first concentration level. The concentration of ammonia in the liquid containing ammonia and the amount thereof to be added to the liquid mixture are adjusted so as to increase the concentration of ammonia in the liquid mixture to the first concentration level by addition thereof.

Abstract translation: 使用主要含有氨和过氧化氢的液体混合物清洁硅衬底。 将含有氨的液体加入到液体混合物中，以将液体混合物中的氨的浓度保持在硅衬底上，其浓度在2.5wt。 ％和3.5wt。 ％。 将含有氨的液体以恒定的时间间隔加入到液体混合物中。 将恒定时间间隔设定为等于液体混合物中的氨浓度从不超过3.5重量％的第一浓度水平变化所需的时间段。 ％至第二浓度水平不低于2.5wt。 ％，第二浓度水平低于第一浓度水平。 调节含氨液体中的氨浓度和加入到液体混合物中的量，以便通过添加将液体混合物中的氨浓度提高到第一浓度水平。

公开(公告)号：US08320589B2

公开(公告)日：2012-11-27

申请号：US12939748

申请日：2010-11-04

Applicant: Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Hiroshi Ogura ,  Yuichi Miyoshi

IPC: H04R25/00

CPC classification number: H04R19/016 ,  B81B2201/0257 ,  B81C1/00944 ,  B81C2201/112 ,  H04R19/005

Abstract: An electret condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electret film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract translation: 驻极体电容器包括固定膜110，该固定膜110包括作为上电极的导电膜118，包括下电极104的振动膜112和作为驻极体膜的氧化硅膜105，以及设置在固定 膜110和振动膜112，并且包括气隙109.暴露在气隙109中的固定膜110和振动膜112的各个部分由氮化硅膜106和114形成。

公开(公告)号：US08146437B2

公开(公告)日：2012-04-03

申请号：US12630179

申请日：2009-12-03

Applicant: Yuichi Miyoshi ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

Inventor： Yuichi Miyoshi ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

IPC: G01L9/06

CPC classification number: G01L9/0016 ,  H04R19/005

Abstract: A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.

Abstract translation: 用于MEMS器件的隔膜结构包括形成为从衬底的上表面到底表面穿透的通孔; 以及形成在基板的上表面上以覆盖通孔的振动电极膜。 基板的上表面中的通孔的开口形状基本上是六边形。

公开(公告)号：US08067811B2

公开(公告)日：2011-11-29

申请号：US12938007

申请日：2010-11-02

Applicant: Tohru Yamaoka ,  Yuichi Miyoshi

Inventor： Tohru Yamaoka ,  Yuichi Miyoshi

IPC: H01L21/00 ,  H04R25/00

CPC classification number: H04R19/005 ,  B81B3/0086 ,  B81B2201/0257 ,  H04R19/016 ,  H04R19/04 ,  H04R2410/03

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract translation: MEMS器件包括形成在半导体衬底上的第一绝缘膜，形成在第一绝缘膜上的振动膜和位于振动膜上方的固定膜，其间夹有气隙。 半导体衬底具有包含N型多数载流子的区域。 在半导体衬底与第一绝缘膜接触的半导体衬底的一部分中的N型多数载流子的浓度高于半导体衬底的另一部分中的N型多数载流子的浓度。