摘要:
To effectively eliminate radiation outside the band with a wavelength of 13.5 nm which has adverse effects on exposure without reducing the intensity of the EUV radiation with a wavelength of 13.5 nm, in an extreme UV radiation exposure tool which has an extreme UV radiation source device with an EUV focusing mirror which focuses extreme UV radiation and radiation outside the band which is emitted by the high density and high temperature region of a plasma, an illumination optical system for projecting this radiation onto a mask, and a projection optical system which projects the radiation from the mask onto a workpiece, a radiation shield is provided of a size which enables the radiation emerging from the EUV focusing mirror to be completely incident on it, and which has an opening of a size which results in essentially only extreme UV radiation being transmitted through it.
摘要:
A game apparatus as a video reproduction controlling apparatus includes a CPU, and the CPU executes a reproduction control of a DVD. In the middle of reproducing the DVD, a content such as an video, a voice, etc. are reproduced. In a case that a reproduction operation such as pause, reproduction, fast reverse, fast forward, heading, etc. is not prohibited, in response to an instruction of the reproduced screen displayed on the monitor with a controller, an operation panel for reproduction operation is displayed. On the other hand, while a menu is reproduced or in a case that a screen button is displayed in accordance with the reproduction, the reproduction operation is prohibited, and even if the reproduced screen is instructed with the controller, the operation panel is not displayed.
摘要:
To suppress the adherence of debris as a result of a radiating fuel, such as tin or the like, within a vessel for forming high density and high temperature plasma of an extreme UV radiation source device, and to eliminate deposited tin and/or tin compounds with high efficiency, hydrogen radical producing parts are provided in the vessel; and hydrogen radicals are produced in the vessel so that deposition of tin and/or a tin compound is suppressed in the area with a low temperature of the device, such as a focusing mirror or the like, and the deposited tin and/or tin compound is eliminated.
摘要:
To suppress the adherence of debris as a result of a radiating fuel, such as tin or the like, within a vessel for forming high density and high temperature plasma of an extreme UV radiation source device, and to eliminate deposited tin and/or tin compounds with high efficiency, hydrogen radical producing parts are provided in the vessel; and hydrogen radicals are produced in the vessel so that deposition of tin and/or a tin compound is suppressed in the area with a low temperature of the device, such as a focusing mirror or the like, and the deposited tin and/or tin compound is eliminated.
摘要:
In a line-narrowed gas laser system such as a line-narrowed molecular fluorine laser system, ASE is cut off to obtain a spectral linewidth of 0.2 pm or lower and a spectral purity of 0.5 pm or lower. The laser system comprises a laser chamber filled with an F2-containing laser gas, discharge electrodes located in the laser chamber, a laser resonator and a line-narrowing module located in the laser resonator with a wavelength selection element, so that a line-narrowed laser beam emerges from the laser resonator. To cut off ASE from the laser beam emerging from the laser resonator, the duration from laser emission by discharge to generation of a laser beam is preset. Rise of the sidelight is made so gentle that the starting point of a laser pulse can exist after the time of the first sidelight peak.
摘要:
A game apparatus as a video reproduction controlling apparatus includes a CPU, and the CPU executes a reproduction control of a DVD. In the middle of reproducing the DVD, a content such as an video, a voice, etc. are reproduced. In a case that a reproduction operation such as pause, reproduction, fast reverse, fast forward, heading, etc. is not prohibited, in response to an instruction of the reproduced screen displayed on the monitor with a controller, an operation panel for reproduction operation is displayed. On the other hand, while a menu is reproduced or in a case that a screen button is displayed in accordance with the reproduction, the reproduction operation is prohibited, and even if the reproduced screen is instructed with the controller, the operation panel is not displayed.
摘要:
To effectively eliminate radiation outside the band with a wavelength of 13.5 nm which has adverse effects on exposure without reducing the intensity of the EUV radiation with a wavelength of 13.5 nm, in an extreme UV radiation exposure tool which has an extreme UV radiation source device with an EUV focusing mirror which focuses extreme UV radiation and radiation outside the band which is emitted by the high density and high temperature region of a plasma, an illumination optical system for projecting this radiation onto a mask, and a projection optical system which projects the radiation from the mask onto a workpiece, a radiation shield is provided of a size which enables the radiation emerging from the EUV focusing mirror to be completely incident on it, and which has an opening of a size which results in essentially only extreme UV radiation being transmitted through it.
摘要:
The present invention relates to a two stage laser system in which a desired spectral line width can be obtained at high output even when the integrated spectral characteristic of oscillator laser does not have the desired spectral line width, comprising an oscillator laser device 10 which has discharge electrodes 2 within a laser chamber 1 filled with laser gas containing F2 and emits laser beam which is band-narrowed by means of a band narrowing module 3 arranged in a laser resonator, and an amplifier laser device 20 which has discharge electrodes 2 within a laser chamber 1 filled with laser gas containing F2 and amplifies laser pulse injected from said oscillator laser device 10. In the system, a synchronous time interval having a predetermined spectral line width exists in laser pulse from the oscillator laser 10, and the system is set such that a discharge occurs in the amplifier laser 20 within the synchronous time interval.
摘要:
The present invention relates to a wavelength monitoring apparatus capable of measuring both standard light and laser light for semiconductor exposure simultaneously and highly accurately, without a time lag. Entrance-side optical systems 21 and 22 allow light from a laser 20 for semiconductor exposure and reference light from a He—Ne laser 10 to be incident on different areas of a single etalon 1 in the form of diverging light, converging light or diffused light in such a manner that the respective center axes thereof are displaced relative to each other. Two focusing optical systems 31 and 32 are provided in approximately coaxial relation to the respective center axes of the laser light and reference light passing through the etalon 1. A one-dimensional array optical sensor 4 is placed in a plane P coincident with the back focal planes of the focusing optical systems 31 and 32 to receive interference fringes produced by the laser light and the reference light. The positions of the interference fringes on the one-dimensional array optical sensor 4 are detected to calculate the wavelength of the laser light for semiconductor exposure.