Extreme UV radiation exposure tool and extreme UV radiation source device
    11.
    发明授权
    Extreme UV radiation exposure tool and extreme UV radiation source device 有权
    极紫外辐射曝光工具和极紫外线辐射源装置

    公开(公告)号:US07535013B2

    公开(公告)日:2009-05-19

    申请号:US11412793

    申请日:2006-04-28

    申请人: Kyohei Seki

    发明人: Kyohei Seki

    IPC分类号: G21K3/00

    摘要: To effectively eliminate radiation outside the band with a wavelength of 13.5 nm which has adverse effects on exposure without reducing the intensity of the EUV radiation with a wavelength of 13.5 nm, in an extreme UV radiation exposure tool which has an extreme UV radiation source device with an EUV focusing mirror which focuses extreme UV radiation and radiation outside the band which is emitted by the high density and high temperature region of a plasma, an illumination optical system for projecting this radiation onto a mask, and a projection optical system which projects the radiation from the mask onto a workpiece, a radiation shield is provided of a size which enables the radiation emerging from the EUV focusing mirror to be completely incident on it, and which has an opening of a size which results in essentially only extreme UV radiation being transmitted through it.

    摘要翻译: 在极紫外辐射曝光工具中,为了有效地消除波长在13.5nm以外的辐射,这对辐射有不利影响,而不会降低具有13.5nm波长的EUV辐射的强度,该工具具有极端的UV辐射源装置, EUV聚焦镜,其聚焦由等离子体的高密度和高温区域发射的带外的极紫外辐射和辐射,用于将该辐射投影到掩模上的照明光学系统,以及投影光学系统 从掩模到工件的辐射屏蔽件提供的尺寸使得从EUV聚焦镜出射的辐射能够完全入射到其上,并且其具有基本上仅导致极端的紫外线辐射的尺寸的开口 通过它。

    Extreme UV radiation source device and method for eliminating debris which forms within the device
    13.
    发明授权
    Extreme UV radiation source device and method for eliminating debris which forms within the device 有权
    极端的UV辐射源装置和消除装置内形成的碎屑的方法

    公开(公告)号:US07459708B2

    公开(公告)日:2008-12-02

    申请号:US11337539

    申请日:2006-01-24

    IPC分类号: H01J7/24 G03F7/20

    摘要: To suppress the adherence of debris as a result of a radiating fuel, such as tin or the like, within a vessel for forming high density and high temperature plasma of an extreme UV radiation source device, and to eliminate deposited tin and/or tin compounds with high efficiency, hydrogen radical producing parts are provided in the vessel; and hydrogen radicals are produced in the vessel so that deposition of tin and/or a tin compound is suppressed in the area with a low temperature of the device, such as a focusing mirror or the like, and the deposited tin and/or tin compound is eliminated.

    摘要翻译: 为了抑制由用于形成极紫外辐射源装置的高密度和高温等离子体的容器内的辐射燃料(例如锡等)导致的碎片的附着,并且消除沉积的锡和/或锡化合物 在高效率的情况下,在该容器中提供氢根产生部件; 并且在容器中产生氢自由基,使得在诸如聚焦镜等的装置的低温区域和锡沉积的锡和/或锡化合物的区域中,锡和/或锡化合物的沉积被抑制 被淘汰。

    Extreme UV radiation source device and method for eliminating debris which forms within the device
    14.
    发明申请
    Extreme UV radiation source device and method for eliminating debris which forms within the device 有权
    极端的UV辐射源装置和消除装置内形成的碎屑的方法

    公开(公告)号:US20060163500A1

    公开(公告)日:2006-07-27

    申请号:US11337539

    申请日:2006-01-24

    IPC分类号: H05G2/00 G21G4/00 H01J35/00

    摘要: To suppress the adherence of debris as a result of a radiating fuel, such as tin or the like, within a vessel for forming high density and high temperature plasma of an extreme UV radiation source device, and to eliminate deposited tin and/or tin compounds with high efficiency, hydrogen radical producing parts are provided in the vessel; and hydrogen radicals are produced in the vessel so that deposition of tin and/or a tin compound is suppressed in the area with a low temperature of the device, such as a focusing mirror or the like, and the deposited tin and/or tin compound is eliminated.

    摘要翻译: 为了抑制由用于形成极紫外辐射源装置的高密度和高温等离子体的容器内的辐射燃料(例如锡等)导致的碎片的附着,并且消除沉积的锡和/或锡化合物 在高效率的情况下,在该容器中提供氢根产生部件; 并且在容器中产生氢自由基,使得在诸如聚焦镜等的装置的低温区域和锡沉积的锡和/或锡化合物的区域中,锡和/或锡化合物的沉积被抑制 被淘汰。

    Line-narrowed gas laser system
    15.
    发明授权
    Line-narrowed gas laser system 有权
    线窄气体激光系统

    公开(公告)号:US07072375B2

    公开(公告)日:2006-07-04

    申请号:US10371478

    申请日:2003-02-20

    IPC分类号: H01S3/22

    CPC分类号: H01S3/225 H01S3/134 H01S3/139

    摘要: In a line-narrowed gas laser system such as a line-narrowed molecular fluorine laser system, ASE is cut off to obtain a spectral linewidth of 0.2 pm or lower and a spectral purity of 0.5 pm or lower. The laser system comprises a laser chamber filled with an F2-containing laser gas, discharge electrodes located in the laser chamber, a laser resonator and a line-narrowing module located in the laser resonator with a wavelength selection element, so that a line-narrowed laser beam emerges from the laser resonator. To cut off ASE from the laser beam emerging from the laser resonator, the duration from laser emission by discharge to generation of a laser beam is preset. Rise of the sidelight is made so gentle that the starting point of a laser pulse can exist after the time of the first sidelight peak.

    摘要翻译: 在线狭窄的分子氟激光系统等线狭窄气体激光器系统中,切断ASE以获得0.2μm以下的光谱线宽和0.5μm以下的光谱纯度。 激光系统包括填充有含2激光气体的激光室,位于激光室中的放电电极,激光谐振器和位于激光谐振器中的具有波长选择的线窄模块 元件,使得线状窄激光束从激光谐振器中涌出。 为了从激光谐振器中产生的激光束切断ASE,预设了通过放电激光发射到产生激光束的持续时间。 侧光的上升使得激光脉冲的起始点在第一个侧光峰值时间之后可以存在。

    Extreme UV radiation exposure tool and extreme UV radiation source device

    公开(公告)号:US20060243923A1

    公开(公告)日:2006-11-02

    申请号:US11412793

    申请日:2006-04-28

    申请人: Kyohei Seki

    发明人: Kyohei Seki

    IPC分类号: G21G4/00

    摘要: To effectively eliminate radiation outside the band with a wavelength of 13.5 nm which has adverse effects on exposure without reducing the intensity of the EUV radiation with a wavelength of 13.5 nm, in an extreme UV radiation exposure tool which has an extreme UV radiation source device with an EUV focusing mirror which focuses extreme UV radiation and radiation outside the band which is emitted by the high density and high temperature region of a plasma, an illumination optical system for projecting this radiation onto a mask, and a projection optical system which projects the radiation from the mask onto a workpiece, a radiation shield is provided of a size which enables the radiation emerging from the EUV focusing mirror to be completely incident on it, and which has an opening of a size which results in essentially only extreme UV radiation being transmitted through it.

    Two stage laser system
    18.
    发明授权
    Two stage laser system 有权
    两级激光系统

    公开(公告)号:US06879617B2

    公开(公告)日:2005-04-12

    申请号:US10438737

    申请日:2003-05-14

    摘要: The present invention relates to a two stage laser system in which a desired spectral line width can be obtained at high output even when the integrated spectral characteristic of oscillator laser does not have the desired spectral line width, comprising an oscillator laser device 10 which has discharge electrodes 2 within a laser chamber 1 filled with laser gas containing F2 and emits laser beam which is band-narrowed by means of a band narrowing module 3 arranged in a laser resonator, and an amplifier laser device 20 which has discharge electrodes 2 within a laser chamber 1 filled with laser gas containing F2 and amplifies laser pulse injected from said oscillator laser device 10. In the system, a synchronous time interval having a predetermined spectral line width exists in laser pulse from the oscillator laser 10, and the system is set such that a discharge occurs in the amplifier laser 20 within the synchronous time interval.

    摘要翻译: 本发明涉及一种二阶段激光系统,其中即使当振荡器激光器的积分光谱特性不具有期望的谱线宽度时,也可以以高输出获得期望的谱线宽度,包括具有放电的振荡器激光装置10 在激光室1内的充满了含有F2的激光气体的激光器2内的电极2,并且发射通过设置在激光谐振器中的带窄化模块3而带宽化的激光束,以及在激光器内具有放电电极2的放大器激光装置20 室1充满含有F2的激光气体,并放大从所述振荡器激光装置10注入的激光脉冲。在该系统中,具有预定光谱线宽的同步时间间隔存在于来自振荡器激光器10的激光脉冲中,并且系统被设置为 在同步时间间隔内在放大器激光器20中发生放电。

    Wavelength monitoring apparatus for laser light for semiconductor exposure
    19.
    发明授权
    Wavelength monitoring apparatus for laser light for semiconductor exposure 失效
    用于半导体曝光的激光用波长监视装置

    公开(公告)号:US06509970B1

    公开(公告)日:2003-01-21

    申请号:US09599289

    申请日:2000-06-21

    IPC分类号: G01B902

    CPC分类号: G01J9/0246

    摘要: The present invention relates to a wavelength monitoring apparatus capable of measuring both standard light and laser light for semiconductor exposure simultaneously and highly accurately, without a time lag. Entrance-side optical systems 21 and 22 allow light from a laser 20 for semiconductor exposure and reference light from a He—Ne laser 10 to be incident on different areas of a single etalon 1 in the form of diverging light, converging light or diffused light in such a manner that the respective center axes thereof are displaced relative to each other. Two focusing optical systems 31 and 32 are provided in approximately coaxial relation to the respective center axes of the laser light and reference light passing through the etalon 1. A one-dimensional array optical sensor 4 is placed in a plane P coincident with the back focal planes of the focusing optical systems 31 and 32 to receive interference fringes produced by the laser light and the reference light. The positions of the interference fringes on the one-dimensional array optical sensor 4 are detected to calculate the wavelength of the laser light for semiconductor exposure.

    摘要翻译: 本发明涉及一种波长监视装置,能够同时高精度地测量用于半导体曝光的标准光和激光,而不会出现时间滞后。 入射侧光学系统21和22允许来自激光器20的光用于半导体曝光,并且来自He-Ne激光器10的参考光以发散光,会聚光或漫射光的形式入射到单个标准具1的不同区域 使得其各自的中心轴线相对于彼此移位。 两个聚焦光学系统31和32以与激光的各个中心轴和通过标准具1的参考光大致同轴的方式设置。一维阵列光学传感器4放置在与后焦点重合的平面P中 聚焦光学系统31和32的平面用于接收由激光和参考光产生的干涉条纹。 检测干涉条纹在一维阵列光学传感器4上的位置,以计算用于半导体曝光的激光的波长。