公开(公告)号：US20070243797A1

公开(公告)日：2007-10-18

申请号：US11785190

申请日：2007-04-16

申请人： Akira Fukunaga ,  Noburu Shimizu ,  Shintaro Kamioka ,  Manabu Tsujimura

发明人： Akira Fukunaga ,  Noburu Shimizu ,  Shintaro Kamioka ,  Manabu Tsujimura

IPC分类号： B24B49/00 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24B49/045 ,  H01L22/26

摘要： A polishing method for polishing a workpiece using the chemical polishing process endpoint detecting technology is applicable to actual polishing processes and polishing apparatus. The polishing method including pressing the workpiece against a polishing surface of a polishing table, moving the workpiece and the polishing surface relatively to each other to polish the workpiece, and disposing a gas suction pipe having a gas inlet port, directly above the polishing surface, supplying an atmospheric gas from above the polishing surface through the gas inlet port to a gas detector via the gas suction pipe, and monitoring a particular gas contained in the atmospheric gas with the gas detector while the workpiece is being polished.

摘要翻译： 使用化学抛光处理终点检测技术对工件进行抛光的抛光方法适用于实际的抛光工艺和抛光装置。 抛光方法包括将工件压靠在抛光台的研磨面上，相对移动工件和抛光表面以抛光工件，并且在抛光表面正上方设置具有气体入口的气体吸入管， 通过气体吸入管将来自抛光表面上方的大气气体通过气体入口供给到气体检测器，并且在抛光工件时，利用气体检测器监测包含在气体中的特定气体。

公开(公告)号：US07011569B2

公开(公告)日：2006-03-14

申请号：US10134513

申请日：2002-04-30

申请人： Noburu Shimizu ,  Norio Kimura

发明人： Noburu Shimizu ,  Norio Kimura

IPC分类号： B24B1/00

CPC分类号： B24B37/26 ,  B08B1/04 ,  B24B27/0023 ,  B24B37/042 ,  B24B37/105 ,  B24B37/12 ,  B24B37/16 ,  B24B37/245 ,  B24B37/345 ,  H01L21/30625 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/68785 ,  H01L21/68792

摘要： A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.

公开(公告)号：US20050090188A1

公开(公告)日：2005-04-28

申请号：US10985940

申请日：2004-11-12

申请人： Noburu Shimizu ,  Norio Kimura

发明人： Noburu Shimizu ,  Norio Kimura

IPC分类号： B08B1/04 ,  B24B27/00 ,  B24B37/04 ,  H01L21/00 ,  H01L21/306 ,  H01L21/687 ,  B24B1/00

CPC分类号： B24B37/26 ,  B08B1/04 ,  B24B27/0023 ,  B24B37/042 ,  B24B37/105 ,  B24B37/12 ,  B24B37/16 ,  B24B37/245 ,  B24B37/345 ,  H01L21/30625 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/68785 ,  H01L21/68792

摘要： A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.

摘要翻译： 通过在预定压力下将工件压靠在抛光表面上来对诸如半导体晶片的工件进行抛光。 通过在预定压力下将工件压靠在处理表面上，同时处理表面沿着预定路径进行循环平移运动来处理工件的抛光表面。 处理表面包括抛光布的表面或研磨板的表面，并且进一步抛光或清洁工件的抛光表面。

公开(公告)号：US06413156B1

公开(公告)日：2002-07-02

申请号：US09301718

申请日：1999-04-29

申请人： Noburu Shimizu ,  Norio Kimura

发明人： Noburu Shimizu ,  Norio Kimura

IPC分类号： B24B2900

CPC分类号： B24B37/26 ,  B08B1/04 ,  B24B27/0023 ,  B24B37/042 ,  B24B37/105 ,  B24B37/12 ,  B24B37/16 ,  B24B37/245 ,  B24B37/345 ,  H01L21/30625 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/68785 ,  H01L21/68792

摘要： A workpiece such as a semiconductor wafer is polished by pressing the workpiece against a polishing surface under a predetermined pressure. A polished surface of the workpiece is processed by pressing the workpiece against a processing surface under a predetermined pressure while the processing surface makes circulatory translational motion along a predetermined path. The processing surface comprises a surface of a polishing cloth or a surface of an abrading plate, and the polished surface of the workpiece is further polished or cleaned.

公开(公告)号：US20060166503A1

公开(公告)日：2006-07-27

申请号：US10559815

申请日：2004-07-01

申请人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

发明人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

IPC分类号： B24B49/00 ,  H01L21/461 ,  B24B51/00

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有接口（310），其被配置为输入形成在待抛光的基板上的膜的期望厚度;以及存储装置（308a），被配置为将抛光速率数据存储在其中的至少一个过去的基板上。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算基于抛光速率数据和期望厚度的抛光速率和最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

公开(公告)号：US6148463A

公开(公告)日：2000-11-21

申请号：US80453

申请日：1998-05-19

申请人： Noburu Shimizu ,  Koji Ato

发明人： Noburu Shimizu ,  Koji Ato

IPC分类号： B08B1/04 ,  B08B3/10 ,  H01L21/304 ,  B08B11/02 ,  A46B13/04

CPC分类号： B08B3/10 ,  B08B1/04

摘要： The cleaning apparatus of the present invention comprises a cleaning member 105 adapted to be rotated while maintaining contact with a surface of a semiconductor wafer W, to thereby clean the surface of the semiconductor wafer W, and a drive motor 50 for rotating the cleaning member 105. A linear bushing 75 and coil springs 81 are provided between the cleaning member 105 and the drive motor 50. The linear bushing 75 ensures that the cleaning member 105 is capable of slidably moving in a direction of an axis of rotation. The coil springs 81 ensure that the cleaning member 105 applies a predetermined pressure to the semiconductor wafer W. A pressure in a casing 1 [(1-1), (1-2) and (1-3)] is set to a negative pressure relative to an outside air pressure by suction through a pipe 111.

摘要翻译： 本发明的清洁装置包括：清洁部件105，其适于旋转，同时保持与半导体晶片W的表面的接触，从而清洁半导体晶片W的表面;以及驱动电机50，用于使清洁部件105旋转 线性衬套75和螺旋弹簧81设置在清洁构件105和驱动马达50之间。线性衬套75确保清洁构件105能够沿着旋转轴线的方向可滑动地移动。 螺旋弹簧81确保清洁构件105向半导体晶片W施加预定的压力。壳体1 [（1-1），（1-2）和（1-3）]中的压力被设置为负 通过管111的抽吸相对于外部空气压力的压力。

公开(公告)号：US5643056A

公开(公告)日：1997-07-01

申请号：US550117

申请日：1995-10-30

申请人： Masayoshi Hirose ,  Seiji Ishikawa ,  Norio Kimura ,  Yoshimi Sasaki ,  Kouki Yamada ,  Fujio Aoyama ,  Noburu Shimizu ,  Katsuya Okumura

发明人： Masayoshi Hirose ,  Seiji Ishikawa ,  Norio Kimura ,  Yoshimi Sasaki ,  Kouki Yamada ,  Fujio Aoyama ,  Noburu Shimizu ,  Katsuya Okumura

IPC分类号： B24B7/22 ,  B24B29/02 ,  B24B37/07 ,  B24B37/10 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B7/228 ,  B24B29/02 ,  B24B37/04

摘要： A drum-type polishing apparatus for producing a flat mirror polish on an object such as a semiconductor wafer, is capable of three degrees of freedom of movement of a drum member with respect to the wafer. The relative movements can be made, successively or simultaneously, at right angles to an axis of the drum, parallel to the surface of the wafer, as well as at any desired angular orientations. Combined with a follower device to provide automatic compensation for unevenness in pressing pressure applied to the wafer during polishing, the polishing apparatus offers outstanding uniformity in polishing quality and high productivity, even for large diameter wafers, with a comparatively modest investment in both facility space and equipment cost.

摘要翻译： 用于在诸如半导体晶片的物体上制造平面镜抛光的滚筒式抛光装置能够使鼓构件相对于晶片具有三个自由度的移动。 相对运动可以连续或同时地与滚筒的轴线成直角，平行于晶片的表面以及任何期望的角度取向。 结合跟随装置，为抛光期间对晶片施加的压力压力的不均匀性提供自动补偿，抛光装置即使对于大直径晶片也具有优异的抛光质量均匀性和高生产率，在设备空间和 设备成本

公开(公告)号：US4688989A

公开(公告)日：1987-08-25

申请号：US647150

申请日：1984-09-05

申请人： Hideki Kondo ,  Noburu Shimizu ,  Yoichi Kanemitsu

发明人： Hideki Kondo ,  Noburu Shimizu ,  Yoichi Kanemitsu

IPC分类号： F04D25/02 ,  F04D29/04 ,  F04D29/051 ,  F04D29/059 ,  F16C27/00 ,  F16C27/04 ,  F01D15/12

CPC分类号： F04D29/0513 ,  F04D25/02 ,  F04D29/059 ,  F04D29/668 ,  F16C27/04

摘要： A gas rotary machine of a type which is driven by a driving system with two parallel axes wherein a pinion shaft supporting a pinion is made as a flexible shaft and damper bearings including ball/roller bearings are employed to support the flexible shaft so that the whole machine is kept compact and the power required therefor is reduced.

摘要翻译： PCT No.PCT / JP84 / 00335 Sec。 371日期1984年9月5日第 102（e）1984年9月5日PCT PCT。1984年6月29日PCT公布。 公开号WO85 / 01328 日期：1985年3月28日。一种由具有两个平行轴线的驱动系统驱动的气体旋转机械，其中支撑小齿轮的小齿轮轴被制成柔性轴，并且采用包括滚珠/滚子轴承的阻尼器轴承来支撑 柔性轴使得整个机器保持紧凑并且所需的功率减小。

公开(公告)号：US20110306274A1

公开(公告)日：2011-12-15

申请号：US13216576

申请日：2011-08-24

申请人： Tatsuya SASAKI ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

发明人： Tatsuya SASAKI ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

IPC分类号： B24B49/00

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有被配置为输入形成在待抛光的基板上的膜的期望厚度的接口（310）和被配置为在其中至少一个过去的基板上存储抛光速率数据的存储装置（308a）。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算抛光速率和基于抛光速率数据和期望厚度的最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

公开(公告)号：US5989107A

公开(公告)日：1999-11-23

申请号：US857252

申请日：1997-05-16

申请人： Noburu Shimizu ,  Norio Kimura

发明人： Noburu Shimizu ,  Norio Kimura

IPC分类号： B24B27/00 ,  B24B37/04 ,  B24B37/07 ,  B24B37/10 ,  B24B37/11 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24B27/0023 ,  B24B37/07 ,  B24B37/10 ,  B24B37/11

摘要： A polishing method and a compact apparatus for the method are presented for efficient production of a polished workpiece for manufacturing high technology devices. The polishing method comprises a first and second steps for polishing a work surface. In the first polishing step, the work surface is pressed against an abrading surface of a first polishing tool which is being rotated. In the second step, the work surface is pressed against a rubbing surface of a second polishing tool which is being moved in a planar translation motion relatively to the work surface.

摘要翻译： 提出了用于该方法的抛光方法和紧凑的装置，用于有效地生产用于制造高技术装置的抛光工件。 抛光方法包括用于抛光工作表面的第一和第二步骤。 在第一抛光步骤中，将工作表面按压在正在旋转的第一抛光工具的研磨表面上。 在第二步骤中，工作表面被压在相对于工作表面平面移动运动的第二抛光工具的摩擦表面上。