Substrate processing apparatus and substrate processing method
    12.
    发明申请
    Substrate processing apparatus and substrate processing method 审中-公开
    基板加工装置及基板处理方法

    公开(公告)号:US20060191556A1

    公开(公告)日:2006-08-31

    申请号:US11360891

    申请日:2006-02-23

    IPC分类号: C23G1/00 H01L21/306

    摘要: In a substrate processing apparatus (1), a ring-shaped cover part (61) opposed to an annular surface (51a) of a rotating part (51) is provided and the rotating part (51) rotates the substrate (9) while holding the substrate (9). An exhaust flow space (64) connecting with a gap space (62) between the cover part (61) and the annular surface (51a) along an outer edge of the cover part (61) is formed by a duct main body (63) connected to the cover part (61) along the outer edge of the cover part (61). Since a cross-sectional area of the exhaust flow space (64) increases gradually along a rotation direction of the rotating part (51), it is possible to reduce variation of inlet flow speed of air around the gap space (62) and to suppress nonuniformity of processing of the substrate (9).

    摘要翻译: 在基板处理装置(1)中,设置与旋转部(51)的环状面(51a)相对的环状的盖部(61),旋转部(51)使基板(9)旋转,同时 保持基板(9)。 沿着盖部(61)的外缘与盖部(61)和环状面(51a)之间的间隙(62)连接的排气流通空间(64)由导管主体(63) )沿着盖部(61)的外缘连接到盖部(61)。 由于排气流动空间64的横截面积沿着旋转部51的旋转方向逐渐增大,因此能够减少间隙(62)周围的空气的入口流速的变动,抑制 基板(9)的加工不均匀性。

    Land pre-pit address demodulating device
    13.
    发明申请
    Land pre-pit address demodulating device 有权
    地预埋地址解调装置

    公开(公告)号:US20050078572A1

    公开(公告)日:2005-04-14

    申请号:US10837569

    申请日:2004-05-04

    摘要: In a land pre-pit address demodulating device DM for detecting land pre-pit address information during recording to a DVD-R/RW-disc, a tracking error signal TE is muted by a first reference potential Vref1 during a period in which the tracking error signal TE is generated from a reflected laser beam having a power for recording a mark, an RF residual component is removed from the tracking error signal TE, and the tracking error signal TE from which the RF residual component has been removed is compared with a second reference potential Vref2, thereby detecting a land pre-pit address signal.

    摘要翻译: 在用于在DVD-R / RW盘记录期间检测陆地预制凹坑地址信息的地预制凹坑地址解调装置DM中,在跟踪误差信号TE的跟踪期间,跟踪误差信号TE被第一参考电位Vref1静音 从具有用于记录标记的功率的反射激光束产生误差信号TE,从跟踪误差信号TE中去除RF残余分量,并且将从其中去除RF残余分量的跟踪误差信号TE与 第二参考电位Vref2,从而检测焊盘预凹坑地址信号。

    Gap measuring device and method using frustrated internal reflection
    14.
    发明授权
    Gap measuring device and method using frustrated internal reflection 失效
    GAP测量装置和使用示例性内部反射的方法

    公开(公告)号:US5225690A

    公开(公告)日:1993-07-06

    申请号:US707152

    申请日:1991-05-29

    IPC分类号: G01B11/14 G01B11/02 G01B11/30

    CPC分类号: G01B11/026 G01B11/306

    摘要: A narrow gap or unevenness of a surface of a specimen is measured by utilizing the tunnel effect of a light wave reflected at a boundary plane on the condition of total reflection. A laser beam emitted from a laser source is reflected at a surface of a prism on the condition of total reflection in terms of geometrical optics. If a gap between the surface of the prism and the specimen is about the wavelength of the laser beam, part of the laser beam is transmitted into the specimen, and the intensity of the transmitted beam depends on the gap width. A portion of the laser beam is reflected at the boundary plane back into the prism. Therefore, the gap can be measured by measuring the transmittance of the laser beam and comparing the same with the calculated relation between the transmittance and the gap calculated in advance. In practice, the gap width is determined by measuring intensity of the reflected laser beam in the presence of the gap and comparing it to the intensity of the reflected laser beam in the absence of the gap, i.e, when the specimen surface is more than several wavelengths away from the reflecting surface.

    Probing apparatus for measuring electrical characteristics of
semiconductor device formed on wafer
    15.
    发明授权
    Probing apparatus for measuring electrical characteristics of semiconductor device formed on wafer 失效
    用于测量在晶片上形成的半导体器件的电特性的探测装置

    公开(公告)号:US4746857A

    公开(公告)日:1988-05-24

    申请号:US903021

    申请日:1986-09-02

    CPC分类号: G01R1/06705 G01R31/2831

    摘要: A probing apparatus is used to measure electrical characteristics of a semiconductor device formed on a wafer. The apparatus includes means for holding the wafer in a vertical or slightly leaned position on a frame, a contact needle, three-directional drive means for holding the needle on the frame movably both vertically and horizontally along the device-bearing surface of the wafer and for bringing the needle into releasable contact with a desired portion of the device-bearing surface of the wafer, and a microscope provided in such a way that the tip of the needle is seen substantially at the center of the field of view, said microscope being movable together with the needle along the device-bearing surface of the wafer.

    摘要翻译: 探测装置用于测量形成在晶片上的半导体器件的电特性。 该装置包括用于将晶片保持在框架上的垂直或稍微倾斜的位置的装置,接触针,三向驱动装置,用于沿着晶片的装置承载表面垂直和水平地可移动地将针保持在框架上; 用于使针与晶片的装置承载表面的期望部分可释放地接触,以及以使得针的尖端基本上被视为视野中心的方式设置的显微镜,所述显微镜是 可以沿着晶片的装置承载表面与针一起移动。

    Semiconductor device with multi-electrode construction equivalent to
variable capacitance diode
    16.
    发明授权
    Semiconductor device with multi-electrode construction equivalent to variable capacitance diode 失效
    具有多电极结构的半导体器件相当于可变电容二极管

    公开(公告)号:US4630082A

    公开(公告)日:1986-12-16

    申请号:US820837

    申请日:1986-01-22

    申请人: Takamasa Sakai

    发明人: Takamasa Sakai

    摘要: A semiconductor device with a multi-electrode construction equivalent to a conventional variable capacitance diode in function is disclosed. The semiconductor device is characterized in that a capacitance read-out portion with a capacitance read-out electrode and a plurality of depletion layer control portions with control electrodes, respectively, are formed in a bulk of a semiconductor single crystal, a depletion layer within said bulk is changed in width, when a plurality of said depletion layer control portions are reverse-biassed in turn through said control electrodes, whereby a change in capacitance can be read out through said capacitance read-out electrode.

    摘要翻译: 公开了一种具有与常规可变电容二极管功能相当的多电极结构的半导体器件。 该半导体器件的特征在于,具有电容读出电极的电容读出部分和分别具有控制电极的多个耗尽层控制部分分别形成在半导体单晶体中,所述半导体单晶中的耗尽层 当多个所述耗尽层控制部分依次通过所述控制电极反向偏置时,体积变化,从而可以通过所述电容读出电极读出电容变化。

    Variable capacitor
    17.
    发明授权
    Variable capacitor 失效
    可变电容器

    公开(公告)号:US4449141A

    公开(公告)日:1984-05-15

    申请号:US331359

    申请日:1981-12-16

    IPC分类号: H01L29/93 H01L29/94 H01L29/92

    CPC分类号: H01L29/93

    摘要: A variable capacitor comprises a plurality of variable capacity elements each having depletion layer control section and a capacity reading section both formed on a semiconductor substrate so that the capacity appearing at each capacity reading section varies in accordance with the bias voltage applied to the depletion layer control sections. Portions of the semiconductor substrate where the capacity reading sections are formed have different carrier concentrations, respectively, so that the capacity read out at the capacity reading section also varies in accordance with the carrier concentration.

    摘要翻译: 可变电容器包括多个可变电容元件,每个可变电容元件具有形成在半导体衬底上的耗尽层控制部分和电容读取部分,使得在每个电容读取部分出现的电容根据施加到耗尽层控制器的偏置电压而变化 部分。 形成容量读取部的半导体基板的部分分别具有不同的载流子浓度,使得在容量读取部读出的容量也根据载流子浓度而变化。

    Substrate cleaning apparatus
    18.
    发明授权

    公开(公告)号:US06598805B2

    公开(公告)日:2003-07-29

    申请号:US10147243

    申请日:2002-05-15

    IPC分类号: B05B124

    摘要: A gas mixture of dry steam and nitrogen gas serving as carrier gas is blown into a hot water mist injection port for rendering the nitrogen gas serve as a medium absorbing latent heat of condensation, thereby smoothly progressing condensation of water vapor and efficiently forming hot water mist. The water vapor is condensed in the hot water mist injection port formed by a cylindrical pipe for supplying latent heat of condensation to the nitrogen gas and dilating the same, thereby accelerating the flow of the hot water mist and spraying the hot water mist to a substrate from the hot water mist injection port at a high speed. Small droplets contained in the high-speed hot water mist have high kinetic energy and high thermal energy, for exhibiting a large colliding effect and a high activation effect with respect to small contaminants adhering to the substrate. A substrate cleaning apparatus capable of spraying hot water mist attaining a high cleaning effect to a substrate is provided.

    Method of and apparatus for washing a substrate
    19.
    发明授权
    Method of and apparatus for washing a substrate 失效
    洗涤基材的方法和设备

    公开(公告)号:US5857474A

    公开(公告)日:1999-01-12

    申请号:US766579

    申请日:1996-12-12

    摘要: A substrate washing apparatus includes a cooling system for cooling a substrate to below zero, a wet gas supplying system for supplying a gas containing atomized water to the surface of the substrate cooled by the cooling means to form ice on the surface of said substrate, and an ice removing unit for removing the ice formed on the surface of the substrate. This apparatus removes not only relatively large particles but also fine particles from the substrate.

    摘要翻译: 衬底洗涤装置包括用于将衬底冷却到零以下的冷却系统,用于将冷却装置冷却的含有雾化水的气体供给到所述衬底的表面的湿气供给系统,以在所述衬底的表面上形成冰,以及 除冰单元,用于去除在基板的表面上形成的冰。 该装置不仅从基板除去较大的颗粒,而且还除去细小的颗粒。

    Non-destructive measuring sensor for semiconductor wafer and method of
manufacturing the same
    20.
    发明授权
    Non-destructive measuring sensor for semiconductor wafer and method of manufacturing the same 失效
    用于半导体晶片的非破坏性测量传感器及其制造方法

    公开(公告)号:US5554939A

    公开(公告)日:1996-09-10

    申请号:US171026

    申请日:1993-12-21

    CPC分类号: G01R1/071

    摘要: The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electrode pattern 200 formed on a bottom surface 66a of a cone glass 66. The bottom surface 66a has a reflecting plane 66c for reflecting a laser beam, a test electrode 201, and three parallelism adjustor electrodes 111 through 113 formed around the reflecting plane 66c. The bottom surface 66a also has a guard ring 120 disposed between the test electrode 201 and the parallelism adjustor electrodes 111 through 113. An insulating film 68 covers a lower surface of the cone glass 66. Wiring formed on a inclined face 66b of the cone glass 66 is connected to external lead wires at the upper end of the wiring. Since the cone glass 66 has two flat surfaces parallel to each other, the electrode pattern 200 is easily formed on the bottom surface 66a by photo lithography. The insulating film 68 effectively works to improve the dielectric breakdown strength.

    摘要翻译: 本发明提供了一种新型的传感器,优选用于半导体的电气特性的非破坏性测量。 该传感器容易制造并且具有足够高的绝缘击穿强度。 传感器包括具有形成在锥形玻璃66的底面66a上的电极图案200的电极座64.底面66a具有用于反射激光束的反射面66c,测试电极201和三个平行调节电极 111至113围绕反射平面66c形成。 底表面66a还具有设置在测试电极201和平行度调节器电极111至113之间的保护环120.绝缘膜68覆盖锥形玻璃66的下表面。在锥形玻璃的倾斜面66b上形成的接线 66连接到布线上端的外部引线。 由于锥形玻璃66具有彼此平行的两个平坦表面,所以通过光刻法容易地在底表面66a上形成电极图案200。 绝缘膜68有效地改善介电击穿强度。