摘要:
In a substrate processing apparatus for performing a substrate processing with a substrate being rotated, a ring-shaped motor is provided and a water pipe, a drainpipe and gas supply pipes are connected to a stationary part of the motor covered with a rotating part thereof. A gas from the gas supply pipes is supplied between the stationary part and the rotating part of the motor, thereby making the rotating part rotatable with a mechanism of a static pressure gaseous bearing (and a mechanical rotary). A group of induction coils are provided in a ring shape, and the water pipe and the drainpipe are connected to a duct for cooling water formed in the stationary part along the group of induction coils. This constitution allows removal of heat generated by the group of induction coils, to thereby achieving an adequate high-speed rotation of the substrate.
摘要:
A heat processing apparatus for manufacturing semiconductors is constructed such that an airtightly sealing part is provided at the tubular end having equal diameter to that of a main body of the apparatus, a ring shaped packing is wound on the outer circumference of a cylindrical tube adjacent to the end to be pressed between a pair of ring bodies which are formed with tapered edges of opposite inner sides, an inner tube having an equal diameter to that of the tube is connected with the end of the cylindrical tube through a cushioning material, on the outer circumference of the inner tube an outer tube is constructed integrally with one of the ring bodies, opening ends of both the inner and the outer tubes are adapted to be closed with a lid, and to the outer tube there are provided an exhausting tube for exhausting gas in the cylindrical tube and a gas introducing tube which interrupts an open air from the cylindrical tube with the flow of inert gas which flows when the lid is opened, and exhausting holes which connect with the exhausting tube and a plurality lines of gas holes for forming "gas curtain" are provided to the inner tube.
摘要:
A sputtering apparatus includes a target and a substrate holder respectively supported in a lower portion and an upper portion of a vacuum chamber, a gas jet opening located near the upper surface of the target, and gas withdrawal conduits located near the substrate holder, so that by supplying a gas to the vacuum chamber through the gas jet opening, the gas pressure in the chamber gradually decreases from the region near the target to the region near the substrate holder.
摘要:
Disclosed is a method of heating a semiconductor in a heat treatment apparatus for heating the semiconductor at a high temperature, in which a semiconductor is put in the heat treatment apparatus, and an alternating magnetic field is applied to a low-resistance ferromagnetic substance disposed in the heat treatment apparatus and isolated by a material inert to a required treatment atmosphere in the heat treatment apparatus to generate heat in the low-resistance ferromagnetic substance to thereby carry out heat treatment on the semiconductor. Further disclosed is a susceptor for supporting a semiconductor inertly to a required treatment atmosphere in a heat treatment apparatus, the susceptor being constituted by a material which is inert to the treatment atmosphere in the treatment apparatus and a low-resistance ferromagnetic substance isolated by the inert material from the treatment atmosphere. Preferably, a Curie point of the low-resistance ferromagnetic substance is set in accordance with a temperature at which the semiconductor is heated.
摘要:
A feeder of oxygen gas containing steam comprising a combustion chamber, an oxygen gas induction tube for inducing oxygen gas to the combustion chamber, a hydrogen gas chamber separated from the combustion chamber by a hydrogen osmotic film between it and the combustion chamber, a hydrogen gas induction chamber which induces the hydrogen gas to the hydrogen gas chamber, an exhaust tube communicated with the hydrogen gas chamber and a heater.
摘要:
Variable capacitance device consisting of a semiconductor substrate having a first conductivity type semiconductor layer, at least one second conductivity type semiconductor region formed in a surface portion of said first conductivity type semiconductor layer, and a barrier for generating a depletion layer formed on the surface opposite to said surface portion of said first conductivity type semiconductor layer, in which a capacitance reading-out section is disposed on said at least one second conductivity type semiconductor region. A depletion layer control section is disposed on said surface opposite to said surface portion; and said depletion layer control section is reversely biased so that said depletion layer extends from said barrier to a junction portion between said first conductivity type semiconductor layer and said at least one second conductivity type semiconductor region, whereby a capacitance variation results at said capacitance reading-out section in response to variation of the reverse bias voltage.
摘要:
A surface-acoustic-wave device has a laminate formed of a semiconductor and a piezoelectric layer and a depletion layer control means locally provided at an interface portion of the semiconductor and said piezoelectric layer, wherein a parametric interaction is caused at a region other than an area where the depletion layer control means is provided and a depletion layer capacitance is controlled by applying a DC bias voltage and a pumping voltage to the depletion layer control means.
摘要:
In a substrate supporting apparatus of a surface potential measuring apparatus, a first fluid is ejected around a target region on an upper surface of a substrate from a circular-shaped first porous member of a first fluid ejection part and a second fluid is ejected onto a lower surface of the substrate from a circular-shaped second porous member of a second fluid ejection part which is opposite to the first fluid ejection part. The substrate can be supported and flattened between the first fluid ejection part and the second fluid ejection part. Also, it is possible to keep the distance between the substrate and the first porous member, with a simple construction. As a result, a probe can be positioned above a flatted target region with leaving a predetermined spacing, to perform measurement of a surface potential of the target region on the substrate with high accuracy.
摘要:
An optical disk device is provided with a first analog-to-digital converter for converting a push-pull signal detected from an optical disc medium into a digital sampling signal according to a sampling clock in the vicinity of a channel frequency. The optical disk device also includes an address polarity information detection circuit for detecting address polarity information from the digital sampling signal, and an address position information detection circuit for detecting address position information from the digital sampling signal while maintaining continuity.
摘要:
In a substrate processing apparatus (1), a ring-shaped cover part (61) opposed to an annular surface (51a) of a rotating part (51) is provided and the rotating part (51) rotates the substrate (9) while holding the substrate (9). An exhaust flow space (64) connecting with a gap space (62) between the cover part (61) and the annular surface (51a) along an outer edge of the cover part (61) is formed by a duct main body (63) connected to the cover part (61) along the outer edge of the cover part (61). Since a cross-sectional area of the exhaust flow space (64) increases gradually along a rotation direction of the rotating part (51), it is possible to reduce variation of inlet flow speed of air around the gap space (62) and to suppress nonuniformity of processing of the substrate (9).