公开(公告)号：US08377762B2

公开(公告)日：2013-02-19

申请号：US12880269

申请日：2010-09-13

申请人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L21/00

CPC分类号： H01L51/5012 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78678 ,  H01L29/7869 ,  H01L51/0097

摘要： An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

摘要翻译： 本发明的目的是提高发光装置的可靠性。 本发明的另一个目的是为具有使用氧化物半导体膜的薄膜晶体管的发光器件提供灵活性。 发光器件在一个柔性基板上具有包括用于驱动电路的薄膜晶体管和包括用于像素的薄膜晶体管的像素部分的驱动电路部分。 用于驱动电路的薄膜晶体管和用于像素的薄膜晶体管是包括与氧化物绝缘层的一部分接触的氧化物半导体层的倒置交错薄膜晶体管。

公开(公告)号：US08877569B2

公开(公告)日：2014-11-04

申请号：US13455425

申请日：2012-04-25

申请人： Yoshiaki Oikawa ,  Hotaka Maruyama ,  Hiromichi Godo ,  Daisuke Kawae ,  Shunpei Yamazaki

发明人： Yoshiaki Oikawa ,  Hotaka Maruyama ,  Hiromichi Godo ,  Daisuke Kawae ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/156 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiOX is used for a channel formation region. In order to reduce contact resistance between the In—Sn—O-based oxide semiconductor layer including SiOX and a wiring layer formed from a metal material having low electric resistance, a source region or drain region is formed between a source electrode layer or drain electrode layer and the In—Sn—O-based oxide semiconductor layer including SiOX. The source region or drain region and a pixel region are formed using an In—Sn—O-based oxide semiconductor layer which does not include SiOX.

摘要翻译： 本发明的目的是提供一种具有使用氧化物半导体层的具有优异电特性的薄膜晶体管的半导体器件。 包括SiOX的In-Sn-O系氧化物半导体层用于沟道形成区域。 为了降低包含SiOX的In-Sn-O系氧化物半导体层与由电阻低的金属材料形成的布线层之间的接触电阻，在源电极层或漏电极之间形成源极区或漏极区 层和包含SiOX的In-Sn-O系氧化物半导体层。 使用不包含SiOX的In-Sn-O系氧化物半导体层来形成源极区域或漏极区域以及像素区域。

公开(公告)号：US08664036B2

公开(公告)日：2014-03-04

申请号：US12968331

申请日：2010-12-15

申请人： Shunpei Yamazaki ,  Hotaka Maruyama ,  Yoshiaki Oikawa ,  Katsuaki Tochibayashi

发明人： Shunpei Yamazaki ,  Hotaka Maruyama ,  Yoshiaki Oikawa ,  Katsuaki Tochibayashi

IPC分类号： H01L21/00

CPC分类号： H01L27/1225 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/28185 ,  H01L27/1229 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869

摘要： An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over the first oxide semiconductor layer. By second heat treatment, an oxide semiconductor layer including a crystal region having the c-axis oriented substantially perpendicular to a surface is efficiently formed and oxygen vacancies are efficiently filled. An oxide insulating layer is formed over and in contact with the oxide semiconductor layer. By third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer. By fourth heat treatment, hydrogen is supplied at least to an interface between the second oxide semiconductor layer and the oxide insulating layer.

摘要翻译： 形成具有优异结晶度的氧化物半导体层，以便能够制造具有优异电特性的晶体管，用于实际应用大型显示装置，高性能半导体器件等。通过第一热处理，第一氧化物半导体层结晶。 在第一氧化物半导体层上形成第二氧化物半导体层。 通过第二热处理，有效地形成包括具有取向为基本上垂直于表面的c轴的晶体区域的氧化物半导体层，并且有效地填充氧空位。 氧化物绝缘层形成在氧化物半导体层上并与氧化物半导体层接触。 通过第三次热处理，再次向氧化物半导体层供给氧。 在氧化物绝缘层上形成含有氢的氮化物绝缘层。 通过第四热处理，至少向第二氧化物半导体层和氧化物绝缘层之间的界面供应氢。

公开(公告)号：US08637347B2

公开(公告)日：2014-01-28

申请号：US12828465

申请日：2010-07-01

申请人： Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/66969 ,  H01L21/02502 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/28008 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

摘要： Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.

摘要翻译： 公开了一种制造具有氧化物半导体作为沟道形成区域的薄膜晶体管的方法。 该方法包括： 在栅极绝缘层上形成氧化物半导体层; 在所述氧化物半导体层上形成与所述氧化物半导体层接触的源电极层和漏电极层，使得所述氧化物半导体层的至少一部分露出; 以及在所述氧化物半导体层上形成氧化物绝缘膜并与所述氧化物半导体层接触。 在形成氧化物绝缘膜之前，氧化物半导体的暴露部分可能在存在等离子体的情况下暴露于含氧气体。 该方法允许氧扩散到氧化物半导体层中，这有助于薄膜晶体管的优异特性。

公开(公告)号：US08035077B2

公开(公告)日：2011-10-11

申请号：US12836142

申请日：2010-07-14

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H01L31/18

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US20100282947A1

公开(公告)日：2010-11-11

申请号：US12836142

申请日：2010-07-14

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H03F3/08 ,  H01L31/18 ,  H01L31/101

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US07759629B2

公开(公告)日：2010-07-20

申请号：US12043640

申请日：2008-03-06

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H01L31/18

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US20080230682A1

公开(公告)日：2008-09-25

申请号：US12043640

申请日：2008-03-06

申请人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Atsushi Hirose ,  Koji Ono ,  Hotaka Maruyama

IPC分类号： H03F3/08 ,  H01L31/18

CPC分类号： H01L27/14665 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/14603 ,  H03F3/08

摘要： A semiconductor device is manufactured through steps in which a photoelectric conversion element and an amplifier circuit are formed over a first substrate with a release layer interposed therebetween, and the photoelectric conversion element and the amplifier circuit are separated from the first substrate. Output characteristics of the amplifier circuit are improved and the semiconductor device with high reliability is obtained. A manufacturing method of such semiconductor device includes steps of forming a metal layer having an opening portion over a substrate, forming an insulating layer over the entire surface of the substrate including the opening portion and the metal layer, forming a photoelectric conversion layer in a region which overlaps with the metal layer and is a layer over the insulating layer, forming an amplifier circuit, which amplifies an output current of the photoelectric conversion element by using a thin film transistor, in the opening portion in the metal layer, forming a protective layer over the photoelectric conversion element and the amplifier circuit, and separating the photoelectric conversion element and the amplifier circuit, together with the insulating layer, from the substrate through laser irradiation to the metal layer.

摘要翻译： 通过在第一基板上形成有光电转换元件和放大电路的步骤制造半导体器件，并且将光电转换元件和放大电路与第一基板分离。 改善放大电路的输出特性，获得高可靠性的半导体器件。 这种半导体器件的制造方法包括以下步骤：在衬底上形成具有开口部分的金属层，在包括开口部分和金属层的衬底的整个表面上形成绝缘层，在区域中形成光电转换层 其与金属层重叠并且是绝缘层上的层，形成放大器电路，其在金属层的开口部分中使用薄膜晶体管放大光电转换元件的输出电流，形成保护层 通过光电转换元件和放大器电路，并且通过激光照射将光电转换元件和放大器电路与绝缘层一起从基板分离到金属层。

公开(公告)号：US08358144B2

公开(公告)日：2013-01-22

申请号：US12912879

申请日：2010-10-27

申请人： Hotaka Maruyama ,  Masumi Mitsubori ,  Kaoru Kato

发明人： Hotaka Maruyama ,  Masumi Mitsubori ,  Kaoru Kato

IPC分类号： H01L21/66 ,  H01L21/4763

CPC分类号： H01L27/127 ,  H01L21/28518 ,  H01L22/12 ,  H01L27/1214 ,  H01L29/458

摘要： A manufacturing method of a semiconductor device capable of efficiently inspecting whether a metal silicide layer is sufficiently formed is provided. The manufacturing method is provided with the steps of forming a metal layer over a semiconductor layer containing silicon; forming a metal silicide layer over a surface of the semiconductor layer by heating the semiconductor layer and the metal layer; generating image data by performing color imaging of the metal silicide layer from above the metal silicide layer; calculating saturation of the metal silicide layer by processing the image data; and judging the formation amount of the metal silicide layer on the basis of the calculated saturation.

摘要翻译： 提供能够有效地检查金属硅化物层是否充分形成的半导体器件的制造方法。 该制造方法具有在包含硅的半导体层上形成金属层的步骤; 通过加热半导体层和金属层在半导体层的表面上形成金属硅化物层; 通过从金属硅化物层上方进行金属硅化物层的彩色成像来产生图像数据; 通过处理图像数据来计算金属硅化物层的饱和度; 并基于计算的饱和度来判断金属硅化物层的形成量。

公开(公告)号：US20110038528A1

公开(公告)日：2011-02-17

申请号：US12912879

申请日：2010-10-27

申请人： Hotaka Maruyama ,  Masumi Mitsubori ,  Kaoru Kato

发明人： Hotaka Maruyama ,  Masumi Mitsubori ,  Kaoru Kato

IPC分类号： G06K9/00

CPC分类号： H01L27/127 ,  H01L21/28518 ,  H01L22/12 ,  H01L27/1214 ,  H01L29/458

摘要： A manufacturing method of a semiconductor device capable of efficiently inspecting whether a metal silicide layer is sufficiently formed is provided. The manufacturing method is provided with the steps of forming a metal layer over a semiconductor layer containing silicon; forming a metal silicide layer over a surface of the semiconductor layer by heating the semiconductor layer and the metal layer; generating image data by performing color imaging of the metal silicide layer from above the metal silicide layer; calculating saturation of the metal silicide layer by processing the image data; and judging the formation amount of the metal silicide layer on the basis of the calculated saturation.

摘要翻译： 提供能够有效地检查金属硅化物层是否充分形成的半导体器件的制造方法。 该制造方法具有在包含硅的半导体层上形成金属层的步骤; 通过加热半导体层和金属层在半导体层的表面上形成金属硅化物层; 通过从金属硅化物层上方进行金属硅化物层的彩色成像来产生图像数据; 通过处理图像数据来计算金属硅化物层的饱和度; 并基于计算的饱和度来判断金属硅化物层的形成量。