公开(公告)号：US08654272B2

公开(公告)日：2014-02-18

申请号：US12848404

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama ,  Masashi Tsubuku

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama ,  Masashi Tsubuku

IPC分类号： G02F1/136 ,  G02F1/1343

CPC分类号： H01L27/1225 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/136204 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/133357 ,  G02F2201/123 ,  G11C19/28 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.

摘要翻译： 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层。 在驱动电路部分的薄膜晶体管中，半导体层夹在栅电极层和导电层之间。 第一布线和第二布线在通过氧化物导电层设置在栅极绝缘膜中的开口中彼此电连接。

公开(公告)号：US08502225B2

公开(公告)日：2013-08-06

申请号：US12871176

申请日：2010-08-30

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L29/10 ,  H01L31/00

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/247 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L51/52 ,  H01L2227/323

摘要： An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

公开(公告)号：US20110062432A1

公开(公告)日：2011-03-17

申请号：US12879635

申请日：2010-09-10

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Jun Koyama ,  Yoshiaki Oikawa ,  Hotaka Maruyama ,  Masami Jintyou ,  Kenichi Okazaki

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Jun Koyama ,  Yoshiaki Oikawa ,  Hotaka Maruyama ,  Masami Jintyou ,  Kenichi Okazaki

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： An object is to realize low power consumption while manufacturing a semiconductor device including a thin film transistor whose parasitic capacitance is reduced. Part of an insulating layer covering the periphery of a gate electrode layer is formed to be thick. Specifically, a stack including a spacer insulating layer and a gate insulating layer is formed. The thick part of the insulating layer covering the periphery of the gate electrode layer reduces parasitic capacitance formed between the gate electrode layer of the thin film transistor and another electrode layer (another wiring layer) overlapping with the gate electrode layer.

摘要翻译： 目的是在制造包括其寄生电容减小的薄膜晶体管的半导体器件的同时实现低功耗。 覆盖栅电极层周围的绝缘层的一部分形成为较厚。 具体地，形成包括间隔绝缘层和栅极绝缘层的堆叠。 覆盖栅电极层周围的绝缘层的厚部减小了在薄膜晶体管的栅电极层与与栅电极层重叠的另一电极层（另一布线层）之间形成的寄生电容。

公开(公告)号：US08377762B2

公开(公告)日：2013-02-19

申请号：US12880269

申请日：2010-09-13

申请人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L21/00

CPC分类号： H01L51/5012 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78678 ,  H01L29/7869 ,  H01L51/0097

摘要： An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

摘要翻译： 本发明的目的是提高发光装置的可靠性。 本发明的另一个目的是为具有使用氧化物半导体膜的薄膜晶体管的发光器件提供灵活性。 发光器件在一个柔性基板上具有包括用于驱动电路的薄膜晶体管和包括用于像素的薄膜晶体管的像素部分的驱动电路部分。 用于驱动电路的薄膜晶体管和用于像素的薄膜晶体管是包括与氧化物绝缘层的一部分接触的氧化物半导体层的倒置交错薄膜晶体管。

公开(公告)号：US08305109B2

公开(公告)日：2012-11-06

申请号：US12880312

申请日：2010-09-13

申请人： Kenichi Okazaki ,  Yoshiaki Oikawa ,  Hotaka Maruyama ,  Hiromichi Godo ,  Shunpei Yamazaki

发明人： Kenichi Okazaki ,  Yoshiaki Oikawa ,  Hotaka Maruyama ,  Hiromichi Godo ,  Shunpei Yamazaki

IPC分类号： H03K17/16 ,  H03K19/003

CPC分类号： H01L27/1233 ,  H01L27/0207 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288

摘要： An object is to obtain a desired threshold voltage of a thin film transistor using an oxide semiconductor. Another object is to suppress a change of the threshold voltage over time. Specifically, an object is to apply the thin film transistor to a logic circuit formed using a transistor having a desired threshold voltage. In order to achieve the above object, thin film transistors including oxide semiconductor layers with different thicknesses may be formed over the same substrate, and the thin film transistors whose threshold voltages are controlled by the thicknesses of the oxide semiconductor layers may be used to form a logic circuit. In addition, by using an oxide semiconductor film in contact with an oxide insulating film formed after dehydration or dehydrogenation treatment, a change in threshold voltage over time is suppressed and the reliability of a logic circuit can be improved.

摘要翻译： 目的是获得使用氧化物半导体的薄膜晶体管的期望阈值电压。 另一个目的是抑制阈值电压随时间的变化。 具体地，目的是将薄膜晶体管施加到使用具有期望阈值电压的晶体管形成的逻辑电路。 为了实现上述目的，可以在相同的衬底上形成包括具有不同厚度的氧化物半导体层的薄膜晶体管，并且其阈值电压由氧化物半导体层的厚度控制的薄膜晶体管可以用于形成 逻辑电路。 此外，通过使用与脱水或脱氢处理之后形成的氧化物绝缘膜接触的氧化物半导体膜，抑制了阈值电压随时间的变化，并且可以提高逻辑电路的可靠性。

公开(公告)号：US08502220B2

公开(公告)日：2013-08-06

申请号：US12848406

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masayuki Sakakura ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L33/40 ,  H01L33/38 ,  H01L33/36

CPC分类号： H01L27/1225 ,  H01L21/385 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78648 ,  H01L29/7869 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer.

摘要翻译： 目的是提高半导体器件的可靠性。 提供了包括驱动电路部分和在相同基板上的显示部分（也称为像素部分）的半导体器件。 驱动器电路部分和显示部分包括其中半导体层包括氧化物半导体的薄膜晶体管; 第一布线 和第二布线。 薄膜晶体管各自包括源极电极层和漏极电极层，每个源电极层和漏极电极层的端部位于比半导体层的端部更靠内侧的形状。 在驱动电路部分的薄膜晶体管中，半导体层设置在栅电极层和导电层之间。 第一布线和第二布线通过氧化物导电层在设置在栅极绝缘层中的开口中电连接。

公开(公告)号：US08637347B2

公开(公告)日：2014-01-28

申请号：US12828465

申请日：2010-07-01

申请人： Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

发明人： Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

IPC分类号： H01L21/00 ,  H01L21/16

CPC分类号： H01L29/66969 ,  H01L21/02502 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/28008 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

摘要： Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.

摘要翻译： 公开了一种制造具有氧化物半导体作为沟道形成区域的薄膜晶体管的方法。 该方法包括： 在栅极绝缘层上形成氧化物半导体层; 在所述氧化物半导体层上形成与所述氧化物半导体层接触的源电极层和漏电极层，使得所述氧化物半导体层的至少一部分露出; 以及在所述氧化物半导体层上形成氧化物绝缘膜并与所述氧化物半导体层接触。 在形成氧化物绝缘膜之前，氧化物半导体的暴露部分可能在存在等离子体的情况下暴露于含氧气体。 该方法允许氧扩散到氧化物半导体层中，这有助于薄膜晶体管的优异特性。

公开(公告)号：US08927351B2

公开(公告)日：2015-01-06

申请号：US12938527

申请日：2010-11-03

申请人： Mitsuhiro Ichijo ,  Tetsuhiro Tanaka ,  Seiji Yasumoto ,  Shun Mashiro ,  Yoshiaki Oikawa ,  Kenichi Okazaki

发明人： Mitsuhiro Ichijo ,  Tetsuhiro Tanaka ,  Seiji Yasumoto ,  Shun Mashiro ,  Yoshiaki Oikawa ,  Kenichi Okazaki

IPC分类号： H01L21/00 ,  C23C16/455 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01J37/32 ,  H01J37/34 ,  C23C16/511 ,  C23C16/30 ,  H01L21/02

CPC分类号： H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

摘要翻译： 本发明的目的是高速驱动半导体器件或提高半导体器件的可靠性。 在半导体器件的制造方法中，其中在绝缘性的衬底上形成栅电极，在栅电极上形成栅极绝缘膜，并且在栅极绝缘膜上形成氧化物半导体膜，栅极 通过使用高密度等离子体的沉积处理形成绝缘膜。 因此，栅极绝缘膜中的悬挂键减少，并且栅极绝缘膜和氧化物半导体之间的界面的质量得到改善。

公开(公告)号：US09382611B2

公开(公告)日：2016-07-05

申请号：US13488626

申请日：2012-06-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： B28B1/00 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US09064853B2

公开(公告)日：2015-06-23

申请号：US13572847

申请日：2012-08-13

申请人： Masafumi Nomura ,  Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Takashi Hamochi ,  Shunpei Yamazaki

发明人： Masafumi Nomura ,  Kenichi Okazaki ,  Toshiyuki Miyamoto ,  Takashi Hamochi ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L29/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

摘要： A semiconductor device including an oxide semiconductor and including a more excellent gate insulating film is provided. A highly reliable and electrically stable semiconductor device having a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that has been put into practical use is provided. A method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, and an oxide semiconductor film formed over the gate insulating film. The gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed over and in contact with the metal oxide film.

摘要翻译： 提供了包括氧化物半导体并且包括更优异的栅极绝缘膜的半导体器件。 本发明提供了一种从投入实际使用的大规模生产技术的膜结构，工艺条件，制造装置等的变化少的高可靠性和电稳定性的半导体装置。 提供一种半导体器件的制造方法。 半导体器件包括形成在栅电极上的栅电极，栅绝缘膜和形成在栅极绝缘膜上的氧化物半导体膜。 栅极绝缘膜包括在氮氧化硅膜上形成的氮氧化硅膜，氧氮化硅膜和在氧氮化硅膜上形成的金属氧化物膜。 氧化物半导体膜形成在金属氧化物膜上并与其接触。