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101 条记录 (耗时 0.034 秒)

    Light-emitting device and manufacturing method thereof
    1.
    发明授权
    Light-emitting device and manufacturing method thereof 有权
    发光元件及其制造方法

    公开(公告)号：US08377762B2

    公开(公告)日：2013-02-19

    申请号：US12880269

    申请日：2010-09-13

    申请人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

    发明人： Shingo Eguchi ,  Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

    IPC分类号： H01L21/00

    CPC分类号： H01L51/5012 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/78678 ,  H01L29/7869 ,  H01L51/0097

    摘要： An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

    摘要翻译： 本发明的目的是提高发光装置的可靠性。 本发明的另一个目的是为具有使用氧化物半导体膜的薄膜晶体管的发光器件提供灵活性。 发光器件在一个柔性基板上具有包括用于驱动电路的薄膜晶体管和包括用于像素的薄膜晶体管的像素部分的驱动电路部分。 用于驱动电路的薄膜晶体管和用于像素的薄膜晶体管是包括与氧化物绝缘层的一部分接触的氧化物半导体层的倒置交错薄膜晶体管。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20110062432A1

    公开(公告)日：2011-03-17

    申请号：US12879635

    申请日：2010-09-10

    申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Jun Koyama ,  Yoshiaki Oikawa ,  Hotaka Maruyama ,  Masami Jintyou ,  Kenichi Okazaki

    发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Jun Koyama ,  Yoshiaki Oikawa ,  Hotaka Maruyama ,  Masami Jintyou ,  Kenichi Okazaki

    IPC分类号： H01L29/786 ,  H01L21/44

    CPC分类号： H01L29/7869 ,  H01L27/1225

    摘要： An object is to realize low power consumption while manufacturing a semiconductor device including a thin film transistor whose parasitic capacitance is reduced. Part of an insulating layer covering the periphery of a gate electrode layer is formed to be thick. Specifically, a stack including a spacer insulating layer and a gate insulating layer is formed. The thick part of the insulating layer covering the periphery of the gate electrode layer reduces parasitic capacitance formed between the gate electrode layer of the thin film transistor and another electrode layer (another wiring layer) overlapping with the gate electrode layer.

    摘要翻译： 目的是在制造包括其寄生电容减小的薄膜晶体管的半导体器件的同时实现低功耗。 覆盖栅电极层周围的绝缘层的一部分形成为较厚。 具体地，形成包括间隔绝缘层和栅极绝缘层的堆叠。 覆盖栅电极层周围的绝缘层的厚部减小了在薄膜晶体管的栅电极层与与栅电极层重叠的另一电极层（另一布线层）之间形成的寄生电容。

    Logic circuit, light emitting device, semiconductor device, and electronic device
    5.
    发明授权
    Logic circuit, light emitting device, semiconductor device, and electronic device 有权
    逻辑电路，发光器件，半导体器件和电子器件

    公开(公告)号：US08305109B2

    公开(公告)日：2012-11-06

    申请号：US12880312

    申请日：2010-09-13

    申请人： Kenichi Okazaki ,  Yoshiaki Oikawa ,  Hotaka Maruyama ,  Hiromichi Godo ,  Shunpei Yamazaki

    发明人： Kenichi Okazaki ,  Yoshiaki Oikawa ,  Hotaka Maruyama ,  Hiromichi Godo ,  Shunpei Yamazaki

    IPC分类号： H03K17/16 ,  H03K19/003

    CPC分类号： H01L27/1233 ,  H01L27/0207 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1288

    摘要： An object is to obtain a desired threshold voltage of a thin film transistor using an oxide semiconductor. Another object is to suppress a change of the threshold voltage over time. Specifically, an object is to apply the thin film transistor to a logic circuit formed using a transistor having a desired threshold voltage. In order to achieve the above object, thin film transistors including oxide semiconductor layers with different thicknesses may be formed over the same substrate, and the thin film transistors whose threshold voltages are controlled by the thicknesses of the oxide semiconductor layers may be used to form a logic circuit. In addition, by using an oxide semiconductor film in contact with an oxide insulating film formed after dehydration or dehydrogenation treatment, a change in threshold voltage over time is suppressed and the reliability of a logic circuit can be improved.

    摘要翻译： 目的是获得使用氧化物半导体的薄膜晶体管的期望阈值电压。 另一个目的是抑制阈值电压随时间的变化。 具体地，目的是将薄膜晶体管施加到使用具有期望阈值电压的晶体管形成的逻辑电路。 为了实现上述目的，可以在相同的衬底上形成包括具有不同厚度的氧化物半导体层的薄膜晶体管，并且其阈值电压由氧化物半导体层的厚度控制的薄膜晶体管可以用于形成 逻辑电路。 此外，通过使用与脱水或脱氢处理之后形成的氧化物绝缘膜接触的氧化物半导体膜，抑制了阈值电压随时间的变化，并且可以提高逻辑电路的可靠性。

    Method for manufacturing semiconductor device
    6.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08637347B2

    公开(公告)日：2014-01-28

    申请号：US12828465

    申请日：2010-07-01

    申请人： Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

    发明人： Yoshiaki Oikawa ,  Kenichi Okazaki ,  Hotaka Maruyama

    IPC分类号： H01L21/00 ,  H01L21/16

    CPC分类号： H01L29/66969 ,  H01L21/02502 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/28008 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

    摘要： Disclosed is a method to manufacture a thin film transistor having an oxide semiconductor as a channel formation region. The method includes; forming an oxide semiconductor layer over a gate insulating layer; forming a source and drain electrode layers over and in contact with the oxide semiconductor layer so that at least portion of the oxide semiconductor layer is exposed; and forming an oxide insulating film over and in contact with the oxide semiconductor layer. The exposed portion of the oxide semiconductor may be exposed to a gas containing oxygen in the presence of plasma before the formation of the oxide insulating film. The method allows oxygen to be diffused into the oxide semiconductor layer, which contributes to the excellent characteristics of the thin film transistor.

    摘要翻译： 公开了一种制造具有氧化物半导体作为沟道形成区域的薄膜晶体管的方法。 该方法包括： 在栅极绝缘层上形成氧化物半导体层; 在所述氧化物半导体层上形成与所述氧化物半导体层接触的源电极层和漏电极层，使得所述氧化物半导体层的至少一部分露出; 以及在所述氧化物半导体层上形成氧化物绝缘膜并与所述氧化物半导体层接触。 在形成氧化物绝缘膜之前，氧化物半导体的暴露部分可能在存在等离子体的情况下暴露于含氧气体。 该方法允许氧扩散到氧化物半导体层中，这有助于薄膜晶体管的优异特性。

    Semiconductor device and manufacturing method thereof
    9.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号：US08664036B2

    公开(公告)日：2014-03-04

    申请号：US12968331

    申请日：2010-12-15

    申请人： Shunpei Yamazaki ,  Hotaka Maruyama ,  Yoshiaki Oikawa ,  Katsuaki Tochibayashi

    发明人： Shunpei Yamazaki ,  Hotaka Maruyama ,  Yoshiaki Oikawa ,  Katsuaki Tochibayashi

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1225 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/28185 ,  H01L27/1229 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869

    摘要： An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over the first oxide semiconductor layer. By second heat treatment, an oxide semiconductor layer including a crystal region having the c-axis oriented substantially perpendicular to a surface is efficiently formed and oxygen vacancies are efficiently filled. An oxide insulating layer is formed over and in contact with the oxide semiconductor layer. By third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer. By fourth heat treatment, hydrogen is supplied at least to an interface between the second oxide semiconductor layer and the oxide insulating layer.

    摘要翻译： 形成具有优异结晶度的氧化物半导体层，以便能够制造具有优异电特性的晶体管，用于实际应用大型显示装置，高性能半导体器件等。通过第一热处理，第一氧化物半导体层结晶。 在第一氧化物半导体层上形成第二氧化物半导体层。 通过第二热处理，有效地形成包括具有取向为基本上垂直于表面的c轴的晶体区域的氧化物半导体层，并且有效地填充氧空位。 氧化物绝缘层形成在氧化物半导体层上并与氧化物半导体层接触。 通过第三次热处理，再次向氧化物半导体层供给氧。 在氧化物绝缘层上形成含有氢的氮化物绝缘层。 通过第四热处理，至少向第二氧化物半导体层和氧化物绝缘层之间的界面供应氢。