Structure for improved high critical current densities in YBCO coatings
    11.
    发明申请
    Structure for improved high critical current densities in YBCO coatings 审中-公开
    用于改善YBCO涂层中高临界电流密度的结构

    公开(公告)号:US20070032384A1

    公开(公告)日:2007-02-08

    申请号:US11189228

    申请日:2005-07-26

    IPC分类号: H01L39/24

    摘要: Improvements in critical current capacity for superconducting film structures are disclosed and include the use of, e.g., multilayer high temperature barium-copper oxide structures where individual high temperature barium-copper oxide layers are separated by a thin layer of a metal oxide material such as CeO2 and the like.

    摘要翻译: 公开了超导膜结构的临界电流容量的改进,并且包括使用例如多层高温钡 - 铜氧化物结构,其中各个高温钡 - 铜氧化物层被金属氧化物材料如CeO的薄层分开 < 2>等等。

    Method for producing high stacking fault energy (SFE) metal films, foils, and coatings with high-density nanoscale twin boundaries

    公开(公告)号:US10023977B2

    公开(公告)日:2018-07-17

    申请号:US14428538

    申请日:2013-09-17

    IPC分类号: C30B29/68 C30B29/02

    摘要: Materials, including metals such as bulk metals, specialty alloys, metallic films and coatings, are made up of many tiny single crystals, which may also be referred to as grains. The boundaries between crystals are called grain boundaries and govern properties such as mechanical strength, deformation, and electrical resistivity. These properties are affected by not only the number of grain boundaries formed, but also the density and orientation of those grain boundaries. Twin boundaries are a special type of grain boundary which have symmetrical “mirror image” structures and preserve favorable qualities of grain boundaries while suppressing unfavorable properties such as the initiation of cracks, inclusions, and other unwanted flaws. Some metals and alloys form twins more easily than others during processing. Metals with low stacking fault energy (SFE) such as austenitic stainless steel, copper (Cu), and silver (Ag) form twin boundaries more easily than metals with high SFE such as Magnesium (Mg) and Aluminum (Al).

    HIGH POWER DIRECT DRIVE CIRCUIT
    14.
    发明申请
    HIGH POWER DIRECT DRIVE CIRCUIT 有权
    高功率直流驱动电路

    公开(公告)号:US20130307417A1

    公开(公告)日:2013-11-21

    申请号:US13473559

    申请日:2012-05-16

    IPC分类号: H05B37/02

    CPC分类号: H05B33/0809

    摘要: A driver circuit for driving an LED includes a rectifier circuit to receive AC voltage and to convert the AC voltage to DC voltage. The driver circuit further includes a filter circuit for filtering the DC voltage. The driver circuit further includes a detection circuit for determining a change in the filtered DC voltage over a predetermined time interval. The driver circuit further includes a dampening circuit for dampening the filtered DC voltage responsive to the detection circuit determining that the change in filtered DC voltage over the predetermined time interval exceeds a predetermined threshold.

    摘要翻译: 用于驱动LED的驱动器电路包括用于接收AC电压并将AC电压转换为DC电压的整流器电路。 驱动器电路还包括用于对直流电压进行滤波的滤波电路。 驱动器电路还包括用于在预定时间间隔内确定经滤波的DC电压的变化的检测电路。 驱动器电路还包括用于衰减滤波后的DC电压的阻尼电路,该阻尼电路响应于检测电路确定在预定时间间隔内滤波的直流电压的变化超过预定阈值。