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    Semiconductor device and a method of manufacturing a semiconductor device
    11.
    发明授权
    Semiconductor device and a method of manufacturing a semiconductor device 失效
    半导体装置及其制造方法

    公开(公告)号：US07263115B2

    公开(公告)日：2007-08-28

    申请号：US10815603

    申请日：2004-04-01

    申请人： Rakesh Roshan ,  Brendan Poole ,  Stewart Edward Hooper ,  Jonathan Heffernan

    发明人： Rakesh Roshan ,  Brendan Poole ,  Stewart Edward Hooper ,  Jonathan Heffernan

    IPC分类号： H01S5/00

    CPC分类号： H01S5/065

    摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region.The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.

    摘要翻译： 半导体器件包括有源区（4），包覆层（5,7）和设置在包覆层内的可饱和吸收层（6）。 可饱和吸收层包括吸收由有源区发射的光的至少一部分（11a），并且包括至少部分（11b），该部分不吸收由有源区发射的光。 本发明的制造方法能够在器件结构制造之后产生可饱和吸收层（6）的非吸收部分（11b）。 这允许在器件生长之后，可饱和吸收层（6）的非吸收部分（11b）和激光器的光学模式之间的重叠程度将被改变。

    Semiconductor device and a method of manufacturing a semiconductor device
    12.
    发明授权
    Semiconductor device and a method of manufacturing a semiconductor device 失效
    半导体装置及其制造方法

    公开(公告)号：US07605011B2

    公开(公告)日：2009-10-20

    申请号：US11782150

    申请日：2007-07-24

    申请人： Rakesh Roshan ,  Brendan Poole ,  Stewart Edward Hooper ,  Jonathan Heffernan

    发明人： Rakesh Roshan ,  Brendan Poole ,  Stewart Edward Hooper ,  Jonathan Heffernan

    IPC分类号： H01L21/00

    CPC分类号： H01S5/065

    摘要： A semiconductor device comprises an active region (4), a cladding layer (5,7), and a saturable absorbing layer (6) disposed within the cladding layer. The saturable absorbing layer comprises at least one portion (11a) that is absorbing for light emitted by the active region and comprises at least portion (11b) that is not absorbing for light emitted by the active region.The fabrication method of the invention enables the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) to produced after the device structure has been fabricated. This allows the degree of overlap between the non-absorbing portion(s) (11b) of the saturable absorbing layer (6) and the optical mode of the laser to be altered after the device has been grown.

    摘要翻译： 半导体器件包括有源区（4），包覆层（5,7）和设置在包覆层内的可饱和吸收层（6）。 可饱和吸收层包括吸收由有源区发射的光的至少一个部分（11a），并且包括至少部分（11b），该部分不吸收由有源区发射的光。 本发明的制造方法能够在制造器件结构之后制造可饱和吸收层（6）的非吸收部分（11b）。 这允许在器件生长之后，可饱和吸收层（6）的非吸收部分（11b）与激光器的光学模式之间的重叠程度将被改变。

    Semiconductor light-emitting device, and a method of manufacture of a semiconductor device
    13.
    发明授权
    Semiconductor light-emitting device, and a method of manufacture of a semiconductor device 有权
    半导体发光器件，以及半导体器件的制造方法

    公开(公告)号：US07417258B2

    公开(公告)日：2008-08-26

    申请号：US11380440

    申请日：2006-04-27

    申请人： Stewart Edward Hooper ,  Valerie Bousquet ,  Jonathan Heffernan

    发明人： Stewart Edward Hooper ,  Valerie Bousquet ,  Jonathan Heffernan

    IPC分类号： H01L27/15

    CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0095 ,  H01L33/025 ,  H01S5/2004 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333

    摘要： A method of manufacturing a nitride semiconductor device comprises the steps of: growing an InxGa1-xN (0≦x≦1) layer, and growing an aluminium-containing nitride semiconductor layer over the InxGa1-xN layer at a growth temperature of at least 500° C. so as to form an electron gas region at an interface between the InxGa1-xN layer and the nitride semiconductor layer. The nitride semiconductor layer is then annealed at a temperature of at least 800° C. The method of the invention can provide an electron gas having a sheet carrier density of 6×1013cm−2 or greater. An electron gas with such a high sheet carrier concentration can be obtained with an aluminium-containing nitride semiconductor layer having a relatively low aluminium concentration, such as an aluminium mole fraction of 0.3 or below, and without the need to dope the aluminium-containing nitride semiconductor layer or the InxGa1-xN layer.

    摘要翻译： 一种制造氮化物半导体器件的方法包括以下步骤：生长In 1 x 1 Ga 1-x N（0 <= x <= 1）层，并生长 含铝氮化物半导体层，在至少500℃的生长温度下在In 1 x 1 Ga 1-x N层上形成电子气区域 在In 1 x 1 Ga 1-x N层和氮化物半导体层之间的界面。 然后将氮化物半导体层在至少800℃的温度下退火。本发明的方法可以提供具有6×10 13 cm -2的薄片载体密度的电子气体， SUP>或更大。 具有如此高的片状载流子浓度的电子气体可以用具有相对较低的铝浓度的铝含量的氮化物半导体层，例如0.3或更低的铝摩尔分数，并且不需要掺杂含铝氮化物 半导体层或In 1 x 1 Ga 1-x N层。

    METHOD FOR GROWING AlInGaN LAYER
    14.
    发明申请
    METHOD FOR GROWING AlInGaN LAYER 审中-公开
    生长AlInGaN层的方法

    公开(公告)号：US20120204957A1

    公开(公告)日：2012-08-16

    申请号：US13024377

    申请日：2011-02-10

    申请人： David NICHOLLS ,  Tim Michael Smeeton ,  Valerie Berryman-Bousquet ,  Stewart Edward Hooper

    发明人： David NICHOLLS ,  Tim Michael Smeeton ,  Valerie Berryman-Bousquet ,  Stewart Edward Hooper

    IPC分类号： H01L21/20 ,  H01L29/20 ,  H01L31/0304 ,  H01L33/32

    CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02631 ,  H01L29/2003 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1848 ,  H01L31/1856 ,  H01L33/0075 ,  Y02E10/544

    摘要： A method for growing an In(x)Al(y)Ga(1−x−y)N layer (where x is greater than zero and less than or equal to one, y is greater than or equal to zero and less than or equal to one and the sum of x and y is less than or equal to one). The method includes supplying plasma-activated nitrogen atoms as a source of nitrogen for the In(x)Al(y)Ga(1−x−y)N layer to a growth surface, where a flux of the plasma-activated nitrogen atoms supplied to the growth surface is at least four times higher than a total flux of aluminium and gallium atoms also supplied to the growth surface, where either the aluminium or gallium flux may or may not be zero; and simultaneously supplying indium atoms and nitrogen-containing molecules to the growth surface.

    摘要翻译： 用于生长In（x）Al（y）Ga（1-x-y）N层的方法（其中x大于零且小于或等于1，y大于或等于零且小于或等于0， 等于1，x和y的和小于或等于1）。 该方法包括将等离子体激活的氮原子作为In（x）Al（y）Ga（1-x-y）N层的氮源提供给生长表面，其中提供了等离子体激活的氮原子的通量 生长表面比也提供给生长表面的铝和镓原子的总通量高至少四倍，其中铝或镓焊剂可以是或不是零; 同时向生长表面提供铟原子和含氮分子。

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE THEREOF
    16.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURE THEREOF 有权
    半导体器件及其制造方法

    公开(公告)号：US20090045394A1

    公开(公告)日：2009-02-19

    申请号：US12189972

    申请日：2008-08-12

    申请人： Tim Michael Smeeton ,  Katherine Louise Smith ,  Mathieu Xavier Senes ,  Stewart Edward Hooper

    发明人： Tim Michael Smeeton ,  Katherine Louise Smith ,  Mathieu Xavier Senes ,  Stewart Edward Hooper

    IPC分类号： H01L33/00 ,  H01L31/0352 ,  H01L21/20

    CPC分类号： H01L31/101 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L29/127 ,  H01L29/2003 ,  H01L33/06 ,  H01S5/3412 ,  H01S5/34333 ,  H01S5/4087

    摘要： A method of manufacturing a semiconductor device comprises depositing a semiconductor layer over a semiconductor surface having at least one first region with a first (average surface lattice) parameter value and at least one second region having a second parameter value different from the first. The semiconductor layer is deposited to a thickness so self-organised islands form over both the first and second regions. The difference in the parameter value means the islands over the first region have a first average parameter value and the islands over the second region have a second average parameter value different from the first. A capping layer is deposited over islands and has a greater forbidden bandgap than the islands whereby the islands form quantum dots, which have different properties over the first and second regions due to difference(s) between the first and second region islands.

    摘要翻译： 一种制造半导体器件的方法包括在半导体表面上沉积半导体层，所述半导体表面具有至少一个具有第一（平均表面晶格）参数值的第一区域和至少一个第二区域，该第二区域具有与第一参数值不同的第二参数值。 半导体层被沉积成厚度，从而在第一和第二区域上形成自组织的岛状物。 参数值的差异意味着第一区域上的岛具有第一平均参数值，并且第二区域上的岛具有与第一区不同的第二平均参数值。 覆盖层沉积在岛上并且具有比岛更大的禁止带隙，由此岛由于第一和第二区域之间的差异而形成量子点，其在第一和第二区域上具有不同的性质。

    Method of forming a compound semiconductor film
    17.
    发明授权
    Method of forming a compound semiconductor film 失效
    形成化合物半导体膜的方法

    公开(公告)号：US6001173A

    公开(公告)日：1999-12-14

    申请号：US866527

    申请日：1997-05-30

    申请人： Timothy David Bestwick ,  Geoffrey Duggan ,  Stewart Edward Hooper ,  Tin Sung Cheng ,  Charles Thomas Bayley Foxon

    发明人： Timothy David Bestwick ,  Geoffrey Duggan ,  Stewart Edward Hooper ,  Tin Sung Cheng ,  Charles Thomas Bayley Foxon

    IPC分类号： C30B29/40 ,  C30B23/02 ,  H01L21/203 ,  H01L21/205 ,  H01L33/00 ,  H01S5/00 ,  H01S5/323 ,  C30B25/02

    CPC分类号： C30B23/02 ,  C30B29/40 ,  C30B29/406 ,  H01L33/007

    摘要： A method of forming a smooth, continuous compound semiconductor film, e.g., a GaN film, is provided. When a GaN film is formed in accordance with this method, Ga is caused to arrive at a sapphire substrate in accordance with a first arrival rate profile over a growth period during which the film is formed, and nitrogen is caused to arrive at the substrate in accordance with a second arrival rate profile over the growth period. The first and second arrival rate profiles are such that the Ga and N are caused to arrive simultaneoulsly at the substrate over the growth period and so that (i) during an initial part of the growth period, growth of the film takes place under a stoichiometric exccess of Ga and (ii) during a subsequent part of the growth period, growth of the film takes place under a stoichiometric excess of N.

    摘要翻译： 提供了形成平滑连续的化合物半导体膜例如GaN膜的方法。 当根据该方法形成GaN膜时，使Ga在形成膜的生长期内按照第一到达速率曲线到达蓝宝石衬底，并且使氮气到达衬底处 按照增长期的第二个到达率曲线。 第一和第二到达速率曲线是这样的，使Ga和N在生长期间同时到达底物，并且使得（i）在生长期的初始部分期间，膜的生长在化学计量 Ga的分解和（ii）在生长期的后续部分期间，膜的生长在化学计量过量的N下进行。

    NITRIDE SEMICONDUCTOR DEVICE
    19.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 审中-公开
    氮化物半导体器件

    公开(公告)号：US20110079767A1

    公开(公告)日：2011-04-07

    申请号：US12995773

    申请日：2009-06-03

    申请人： Mathieu Xavier Senes ,  Katherine Louise Smith ,  Victoria Broadley ,  Stewart Edward Hooper

    发明人： Mathieu Xavier Senes ,  Katherine Louise Smith ,  Victoria Broadley ,  Stewart Edward Hooper

    IPC分类号： H01L33/04 ,  B82Y20/00

    CPC分类号： H01S5/34333 ,  B82Y10/00 ,  B82Y20/00 ,  G06N10/00 ,  H01S5/041 ,  H01S5/06236 ,  H01S5/3412

    摘要： A nitride semiconductor device comprises: a layer structure including an active region (102) containing AlxGayIn1-x-yN quantum dots layers (102a), and means (104a,104b) for applying an electric field across the active region to modify the spin orientation of excitons in the quantum dots. The exciton spin lifetime at 300K is, for at least a range of values of the electric field applied across the active region, at least 1 ns, more preferably at least 10 ns, and particularly preferably at least 15 ns or 20 ns. These lifetimes may be obtained by configuring the device such that the exciton binding energy is, for at least a range of values of the electric field applied across the active region, 25 meV or greater.

    摘要翻译： 氮化物半导体器件包括：包括含有Al x Ga y In 1-x-y N量子点层（102a）的有源区（102）的层结构，以及用于在有源区上施加电场以修改自旋取向的装置（104a，104b） 的量子点中的激子。 对于在有源区域施加的电场的至少一个值的范围，300K处的激子自旋寿命至少为1ns，更优选为至少10ns，特别优选为至少15ns或20ns。 这些寿命可以通过将器件配置成使激子结合能量在施加在有源区域上的电场的至少一个值的范围为25meV或更大的范围内来获得。