摘要:
In one example embodiment, the semiconductor device includes a memory cell array having at least one memory cell disposed in a region at which at least one bit line and at least one word line cross. A sensing unit senses data stored in the at least one memory cell. The sensing unit includes a connection control unit configured to control a connection between the at least one bit line and a sensing line based on a control signal, the control signal having a voltage level that varies based on a value of data being sensed by the sensing unit.
摘要:
A multi-valued logic device having an improved reliability includes a conversion unit configured to convert a multi level signal into a plurality of partial signals; and a plurality of nonvolatile memory devices configured to individually store the plurality of partial signals, wherein a number of bits of each of the plurality of partial signals individually stored in the plurality of nonvolatile memory devices is less than the number of bits of the multi level signal.
摘要:
A multi-valued logic device having an improved reliability includes a conversion unit configured to convert a multi level signal into a plurality of partial signals; and a plurality of nonvolatile memory devices configured to individually store the plurality of partial signals, wherein a number of bits of each of the plurality of partial signals individually stored in the plurality of nonvolatile memory devices is less than the number of bits of the multi level signal.
摘要:
Example embodiments provide a reconfigurable logic device including at least two logic blocks having a first logic block and a second logic block, a global wire group including at least a plurality of first global wires connected to the first logic block and a plurality of second global wires connected to the second logic block, and a global controller including a plurality of first nonvolatile memory devices associated with at least one first global wire and one second global wire, the global controller configured to selectively couple the pluralities of first and second global wires based on first data stored in the associated first nonvolatile memory devices.
摘要:
According to example embodiments, a logic device includes a first functional block configured to perform a first operation according to first operation information and a second operation according to second operation information, and a second functional block configured to perform a third operation according to the first operation information and a fourth operation according to the second operation information. The first functional block is configured to receive configuration information, to select one of the first operation information and the second operation information based on the configuration information, and to perform the first or second operation based on the selected first or second operation information. The second functional block is configured to receive the configuration information, to select one of the first operation information and the second operation information based on the configuration information, and to perform the third or fourth operation based on the selected first or second operation information.
摘要:
The logic circuit includes at least one variable resistance device configured such that a resistance value of the at least one variable resistance device varies according to at least one selected value. The selected value is selected from among a voltage and a current of an input signal, and the at least one variable resistance device is configured to memorize the resistance value. The logic circuit is configured to store multi-level data by setting the memorized resistance value.
摘要:
According to example embodiments, a logic device includes a first functional block configured to perform a first operation according to first operation information and a second operation according to second operation information, and a second functional block configured to perform a third operation according to the first operation information and a fourth operation according to the second operation information. The first functional block is configured to receive configuration information, to select one of the first operation information and the second operation information based on the configuration information, and to perform the first or second operation based on the selected first or second operation information. The second functional block is configured to receive the configuration information, to select one of the first operation information and the second operation information based on the configuration information, and to perform the third or fourth operation based on the selected first or second operation information.
摘要:
Example embodiments provide a reconfigurable logic device including at least two logic blocks having a first logic block and a second logic block, a global wire group including at least a plurality of first global wires connected to the first logic block and a plurality of second global wires connected to the second logic block, and a global controller including a plurality of first nonvolatile memory devices associated with at least one first global wire and one second global wire, the global controller configured to selectively couple the pluralities of first and second global wires based on first data stored in the associated first nonvolatile memory devices.
摘要:
A digital-to-analog converter (DAC) includes: a plurality of first controllers and a plurality of resistor devices. The plurality of first controllers are configured to be selectively switched on according to a received digital signal to control an analog signal according to the received digital signal. The plurality of resistor devices are respectively connected to the plurality of first controllers. The plurality of resistor devices include non-volatile memory devices.
摘要:
A digital-to-analog converter (DAC) includes: a plurality of first controllers and a plurality of resistor devices. The plurality of first controllers are configured to be selectively switched on according to a received digital signal to control an analog signal according to the received digital signal. The plurality of resistor devices are respectively connected to the plurality of first controllers. The plurality of resistor devices include non-volatile memory devices.