摘要:
The logic circuit includes at least one variable resistance device configured such that a resistance value of the at least one variable resistance device varies according to at least one selected value. The selected value is selected from among a voltage and a current of an input signal, and the at least one variable resistance device is configured to memorize the resistance value. The logic circuit is configured to store multi-level data by setting the memorized resistance value.
摘要:
The logic circuit includes at least one variable resistance device configured such that a resistance value of the at least one variable resistance device varies according to at least one selected value. The selected value is selected from among a voltage and a current of an input signal, and the at least one variable resistance device is configured to memorize the resistance value. The logic circuit is configured to store multi-level data by setting the memorized resistance value.
摘要:
A logic device may include a first functional block, the first functional block including, a first storage block, a second storage block, and a first function controller. In a first operation time period, the first function controller may be configured to receive a first configuration selection signal and a first configuration command signal that instructs a first function be configured, select the first storage block as a configured storage block in the first operation time period based on the first configuration selection signal, and configure the first function in the first storage block based on the first configuration command signal.
摘要:
In one example embodiment, the semiconductor device includes a memory cell array having at least one memory cell disposed in a region at which at least one bit line and at least one word line cross. A sensing unit senses data stored in the at least one memory cell. The sensing unit includes a connection control unit configured to control a connection between the at least one bit line and a sensing line based on a control signal, the control signal having a voltage level that varies based on a value of data being sensed by the sensing unit.
摘要:
In one example embodiment, the semiconductor device includes a memory cell array having at least one memory cell disposed in a region at which at least one bit line and at least one word line cross. A sensing unit senses data stored in the at least one memory cell. The sensing unit includes a connection control unit configured to control a connection between the at least one bit line and a sensing line based on a control signal, the control signal having a voltage level that varies based on a value of data being sensed by the sensing unit.
摘要:
A digital-to-analog converter (DAC) includes: a plurality of first controllers and a plurality of resistor devices. The plurality of first controllers are configured to be selectively switched on according to a received digital signal to control an analog signal according to the received digital signal. The plurality of resistor devices are respectively connected to the plurality of first controllers. The plurality of resistor devices include non-volatile memory devices.
摘要:
A digital-to-analog converter (DAC) includes: a plurality of first controllers and a plurality of resistor devices. The plurality of first controllers are configured to be selectively switched on according to a received digital signal to control an analog signal according to the received digital signal. The plurality of resistor devices are respectively connected to the plurality of first controllers. The plurality of resistor devices include non-volatile memory devices.
摘要:
Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.
摘要:
Oscillators and methods of operating the oscillators are provided, the oscillators include an oscillating unit including at least one magnetic layer having a magnetization direction that varies according to at least one selected from the group consisting of an applied current, an applied voltage and an applied magnetic field. The oscillating unit is configured to generate an oscillation signal having a set frequency. The oscillators further include an output stage that provides an output signal by differentially amplifying the oscillation signal.
摘要:
A multi-valued logic device having an improved reliability includes a conversion unit configured to convert a multi level signal into a plurality of partial signals; and a plurality of nonvolatile memory devices configured to individually store the plurality of partial signals, wherein a number of bits of each of the plurality of partial signals individually stored in the plurality of nonvolatile memory devices is less than the number of bits of the multi level signal.