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    HEATER STRUCTURE CONFIGURED TO IMPROVE THERMAL EFFICIENCY IN A MODULATOR DEVICE
    12.
    发明申请
    HEATER STRUCTURE CONFIGURED TO IMPROVE THERMAL EFFICIENCY IN A MODULATOR DEVICE 有权

    公开(公告)号：US20220113564A1

    公开(公告)日：2022-04-14

    申请号：US17556006

    申请日：2021-12-20

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Shih-Wei Lin ,  Ming Chyi Liu

    IPC: G02F1/01 ,  G02F1/225

    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a waveguide and a heater structure. The waveguide is disposed on a substrate and comprises an active region that extends continuously along a first distance. The heater structure overlies the waveguide. The heater structure comprises a conductive structure over the active region and a vertical structure disposed between the conductive structure and the substrate. The vertical structure comprises a conductive upper vertical segment and a lower vertical segment. The conductive structure and the conductive upper vertical segment continuously laterally extend across a second distance that is greater than or equal to the first distance. The first distance is greater than a width of the conductive structure.

    Biosensor field effect transistor having specific well structure and method of forming the same
    14.
    发明授权
    Biosensor field effect transistor having specific well structure and method of forming the same 有权

    公开(公告)号：US10048220B2

    公开(公告)日：2018-08-14

    申请号：US14878999

    申请日：2015-10-08

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

    Inventor： Shih-Wei Lin ,  Chang-Ming Wu ,  Lee-Chuan Tseng ,  Shih-Chang Liu

    IPC: G01N27/414

    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a gate structure over a first surface of the substrate, and a source region and a drain region in the substrate adjacent to the gate structure. The semiconductor structure further comprises a channel region interposing the source and drain regions and underlying the gate structure. The semiconductor structure further comprises a first layer over a second surface of the substrate opposite to the first surface, and a second layer over the first layer. The semiconductor structure further comprises a sensing film over the channel region and at least a portion of the first and second layers, and a well over the sensing film and cutting off the first layer and the second layer.

    Biosensing well array by self-alignment and selective etching
    17.
    发明授权
    Biosensing well array by self-alignment and selective etching 有权
    通过自对准和选择性蚀刻生物传感井阵列

    公开(公告)号：US09228974B2

    公开(公告)日：2016-01-05

    申请号：US13946782

    申请日：2013-07-19

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yi-Hsien Chang ,  Wei-Cheng Shen ,  Shih-Wei Lin ,  Chun-Ren Cheng

    IPC: G01N27/414

    CPC classification number: G01N27/4145 ,  Y10T436/143333

    Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of microwells having a bio-sensing layer and a number of stacked well portions over a multi-layer interconnect (MLI). A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The microwells are formed by removing a top metal plate on a topmost level of the MLI.

    Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET器件包括在多层互连（MLI）上具有生物感测层和多个堆叠阱部分的多个微孔。 井部的底面积与直接在下方的井口部的顶面积不同。 通过去除MLI的最上层的顶部金属板来形成微孔。

    Biosensing Well Array With Protective Layer
    18.
    发明申请
    Biosensing Well Array With Protective Layer 有权
    具有保护层的生物传感井阵列

    公开(公告)号：US20150233864A1

    公开(公告)日：2015-08-20

    申请号：US14703724

    申请日：2015-05-04

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Wei-Cheng Shen ,  Yi-Hsien Chang ,  Shih-Wei Lin ,  Chun-Ren Cheng

    IPC: G01N27/414

    CPC classification number: G01N27/4145 ,  G01N27/4148

    Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

    Abstract translation: 本公开提供了生物场效应晶体管（BioFET）和制造BioFET器件的方法。 该方法包括使用与互补金属氧化物半导体（CMOS）工艺兼容或典型的一个或多个工艺步骤形成BioFET。 BioFET包括具有感测层的微孔，感测层下的顶部金属堆叠，以及在顶部金属堆叠下的多层互连（MLI）。 顶部金属堆叠包括顶部金属和保护层，并且围绕顶部金属周围。

    Channel pattern design to improve carrier transfer efficiency
    19.
    发明授权
    Channel pattern design to improve carrier transfer efficiency 有权

    公开(公告)号：US12183764B2

    公开(公告)日：2024-12-31

    申请号：US17735420

    申请日：2022-05-03

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yung-Chang Chang ,  Shih-Wei Lin ,  Te-Hsien Hsieh ,  Jung-I Lin

    IPC: H01L27/146

    Abstract: The present disclosure relates to an image sensor integrated chip. The image sensor integrated chip includes a photodiode region disposed within a substrate having a first semiconductor material region. A second semiconductor material region is disposed onto the substrate. A patterned doped layer is arranged between the substrate and the second semiconductor material region. The second semiconductor material region includes a sidewall connecting to a bottom surface of the second semiconductor material region. The sidewall extends through the patterned doped layer. A bottom surface of the second semiconductor material region is directly over the photodiode region.

    Semiconductor device comprising a photodetector with reduced dark current
    20.
    发明授权
    Semiconductor device comprising a photodetector with reduced dark current 有权

    公开(公告)号：US12136679B2

    公开(公告)日：2024-11-05

    申请号：US18311292

    申请日：2023-05-03

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Chen-Hao Chiang ,  Shih-Wei Lin ,  Eugene I-Chun Chen ,  Yi-Chen Chen

    IPC: G02B6/12 ,  G02B6/124 ,  G02B6/13 ,  G02B6/136 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/18

    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a first doped region having a first doping type disposed in a semiconductor substrate. A second doped region having a second doping type different than the first doping type is disposed in the semiconductor substrate and laterally spaced from the first doped region. A waveguide structure is disposed in the semiconductor substrate and laterally between the first doped region and the second doped region. A photodetector is disposed at least partially in the semiconductor substrate and laterally between the first doped region and the second doped region. The waveguide structure is configured to guide one or more photons into the photodetector. The photodetector has an upper surface that continuously arcs between opposite sidewalls of the photodetector. The photodetector has a lower surface that continuously arcs between the opposite sidewalls of the photodetector.

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