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公开(公告)号:US20190202174A1
公开(公告)日:2019-07-04
申请号:US16229668
申请日:2018-12-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Luigi COLOMBO , Nazila DADVAND , Benjamin Stassen COOK , Archana VENUGOPAL
CPC classification number: B32B9/007 , B32B9/041 , B32B9/045 , B32B2305/38 , B32B2457/14 , C01B32/19 , C01P2002/20 , C23C18/32 , C23C18/38
Abstract: A microstructure comprises a plurality of interconnected units wherein the units are formed of graphene tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing graphitic carbon on the metal microlattice, converting the graphitic carbon to graphene, and removing the metal microlattice.
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公开(公告)号:US20230133993A1
公开(公告)日:2023-05-04
申请号:US17515296
申请日:2021-10-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Hassan Omar ALI , Benjamin Stassen COOK , Scott Robert SUMMERFELT , Jo BITO
Abstract: An optical device includes a metamaterial layer configured to absorb a portion of an incident light having a frequency spectrum, the portion of the incident light having a frequency range that is narrower than and within the frequency spectrum of the incident light, a photodiode disposed in a layer coupled to the metamaterial layer and configured to detect an amplitude of the portion of the incident light, and shallow trench isolation (STI) structures disposed between the metamaterial layer and the photodiode, the STI structures configured to pass the portion of the incident light within the frequency range from the metamaterial layer to the photodiode.
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公开(公告)号:US20220359268A1
公开(公告)日:2022-11-10
申请号:US17683201
申请日:2022-02-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
IPC: H01L21/762
Abstract: Disclosed herein is an integrated circuit (IC) comprising a semiconductor wafer, a dielectric layer, and an isolation element. The semiconductor wafer has a first wafer portion and a second wafer portion each extending from a frontside surface to a backside surface. The dielectric layer interfaces with the first wafer portion and with the second wafer portion each on the frontside surface. The isolation element has an isolation dielectric material, and the isolation element extends between a first side surface of the first wafer portion and a second side surface of the second wafer portion and from an extension plane of the frontside surface to an extension plane of the backside surface. Also disclosed herein is a system comprising the IC and a package substrate coupled to the IC.
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公开(公告)号:US20210313241A1
公开(公告)日:2021-10-07
申请号:US17220782
申请日:2021-04-01
Applicant: Texas Instruments Incorporated
Inventor: Steven Alfred KUMMERL , Benjamin Stassen COOK
IPC: H01L23/14 , H01L21/48 , H01L21/78 , H01L23/498
Abstract: A method for forming a semiconductor structure includes curing a shape memory polymer in a first shape. The shape memory polymer is coupled to a conductive layer. The method further includes folding the shape memory polymer from the first shape into a second shape. The method also includes bonding a semiconductor wafer to the conductive layer while the shape memory polymer is in the second shape. The semiconductor wafer has first and second dies. The semiconductor wafer is then singulated to separate the first die from the second die. The method further includes expanding the shape memory polymer to its first shape and singulating the shape memory polymer to separate the first and second dies.
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公开(公告)号:US20210072327A1
公开(公告)日:2021-03-11
申请号:US16565130
申请日:2019-09-09
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jo BITO , Benjamin Stassen COOK , Dok Won LEE , Keith Ryan GREEN , Kenji OTAKE
Abstract: A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a protective overcoat layer positioned above the surface of the substrate, and a sphere-shaped magnetic concentrator positioned above the protective overcoat layer. Instead of or in addition to the sphere-shaped magnetic concentrator, the structure may include an embedded magnetic concentrator positioned within the substrate and below the horizontal-type Hall sensor.
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公开(公告)号:US20200321302A1
公开(公告)日:2020-10-08
申请号:US16843559
申请日:2020-04-08
Applicant: TEXAS INSTRUMENTS INCORPORATED
IPC: H01L23/00 , H01L23/367 , H01L23/15 , H01L23/495 , H01L23/373
Abstract: In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.
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公开(公告)号:US20190207002A1
公开(公告)日:2019-07-04
申请号:US16232123
申请日:2018-12-26
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Luigi COLOMBO , Archana VENUGOPAL , Benjamin Stassen COOK , Nazila DADVAND
IPC: H01L29/16 , H01L21/768 , H01L21/02 , H01L23/532 , H01L27/06 , H01L29/06 , C23C16/26 , C01B32/194
CPC classification number: H01L29/1606 , C01B32/194 , C23C16/26 , H01L21/0257 , H01L21/76805 , H01L21/76865 , H01L21/76879 , H01L23/53276 , H01L27/0688 , H01L29/0673
Abstract: A structure includes a metal layer and a graphene sheet having at least one hole. The graphene sheet is contained at least partly within the metal layer.
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公开(公告)号:US20190206788A1
公开(公告)日:2019-07-04
申请号:US16236042
申请日:2018-12-28
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Benjamin Stassen COOK , Nazila DADVAND , Archana VENUGOPAL , Luigi COLOMBO
IPC: H01L23/528 , H01L23/532 , H01L21/768
CPC classification number: H01L23/528 , H01L21/76838 , H01L23/53228
Abstract: An interconnect structure for a semiconductor device includes a plurality of unit cells. Each unit cell is formed of interconnected conducting segments. The plurality of unit cells forms a conducting lattice.
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公开(公告)号:US20190202958A1
公开(公告)日:2019-07-04
申请号:US16229971
申请日:2018-12-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Nazila DADVAND , Benjamin Stassen COOK , Archana VENUGOPAL , Luigi COLOMBO
IPC: C08F292/00 , C08F8/42 , C08L25/06 , C08L33/12 , C08K3/08 , C08K3/04 , C08K7/00 , C08J5/24 , G03F1/78
CPC classification number: C08F292/00 , C08F8/42 , C08J5/24 , C08K3/042 , C08K3/08 , C08K7/00 , C08K2003/085 , C08K2003/0862 , C08K2201/013 , C08L25/06 , C08L33/12 , G03F1/78
Abstract: A composite material comprises a polymer matrix having microstructure filler materials that comprise a plurality of interconnected units wherein the units are formed of connected tubes. The tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of interconnected units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, growing or depositing a material on the metal microlattice such as graphene, hexagonal boron nitride or other ceramic, and subsequently removing the metal microlattice.
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公开(公告)号:US20190202700A1
公开(公告)日:2019-07-04
申请号:US16229822
申请日:2018-12-21
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Benjamin Stassen COOK , Nazila DADVAND , Luigi COLOMBO , Archana VENUGOPAL
IPC: C01B32/184 , C01B32/194 , C01B32/16
CPC classification number: C01B32/184 , B82Y30/00 , B82Y40/00 , C01B32/16 , C01B32/194
Abstract: A microstructure comprises a plurality of interconnected units wherein the units are formed of graphene tubes. The graphene tubes may be formed by photo-initiating the polymerization of a monomer in a pattern of units to form a polymer microlattice, removing unpolymerized monomer, coating the polymer microlattice with a metal, removing the polymer microlattice to leave a metal microlattice, depositing graphitic carbon on the metal microlattice, converting the graphitic carbon to graphene, and removing the metal microlattice. A ceramic may be deposited on the graphene and another graphene layer may be deposited on top of the ceramic to create a multi-layered sp2-bonded carbon tube.
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