Chemical vapor deposition growth of graphene

    公开(公告)号:US10370774B2

    公开(公告)日:2019-08-06

    申请号:US14759134

    申请日:2014-01-08

    Abstract: A process of growing graphene includes: (1) providing a metal substrate; (2) annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas; and (3) introducing a gas mixture to grow graphene over the metal substrate. The gas mixture includes a first gas and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar.

    CHEMICAL VAPOR DEPOSITION GROWTH OF GRAPHENE
    18.
    发明申请
    CHEMICAL VAPOR DEPOSITION GROWTH OF GRAPHENE 审中-公开
    化学蒸气沉积石墨生长

    公开(公告)号:US20150337458A1

    公开(公告)日:2015-11-26

    申请号:US14759134

    申请日:2014-01-08

    Abstract: A process of growing graphene includes: (1) providing a metal substrate; (2) annealing the metal substrate up to a growth temperature for an annealing time period and in the presence of a non-reducing gas; and (3) introducing a gas mixture to grow graphene over the metal substrate. The gas mixture includes a first gas and a second gas that is a carbon-containing precursor, a molar ratio of the first gas and the second gas is at least 100, and introducing the gas mixture is carried out at a pressure up to 100 mbar.

    Abstract translation: 生长石墨烯的方法包括:(1)提供金属基底; (2)将金属基板退火至退火时间段的生长温度,并在非还原气体​​存在下退火; 和(3)引入气体混合物以在金属基底上生长石墨烯。 气体混合物包括第一气体和作为含碳前体的第二气体,第一气体和第二气体的摩尔比为至少100,并且在高达100毫巴的压力下引入气体混合物 。

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