公开(公告)号：US20160276218A1

公开(公告)日：2016-09-22

申请号：US15072165

申请日：2016-03-16

Applicant: Tokyo Electron Limited

Inventor： Kenji MATSUMOTO ,  Tadahiro ISHIZAKA ,  Peng CHANG ,  Osamu YOKOYAMA ,  Takashi SAKUMA ,  Hiroyuki NAGAI

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L23/53238 ,  H01L21/28556 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843

Abstract: In a Cu wiring manufacturing method, a MnOx film which becomes a self-formed barrier film by reaction with an interlayer insulating film of a substrate is formed on a surface of a recess formed in the interlayer insulating film by ALD. A hydrogen radical process is performed on a surface of the MnOx film to reduce the surface of the MnOx film. A Ru film is formed by CVD on the surface of the MnOx film which has been reduced by the hydrogen radical process. A Cu-based film is formed on the Ru film by PVD to be filled in the recess. When the Ru film is formed, a film-formation condition of the MnOx film and a condition of the hydrogen radical process are set such that nucleus formation is facilitated and the Ru film is formed in a state where a surface smoothness is high.

Abstract translation: 在Cu布线制造方法中，通过ALD形成在层间绝缘膜的凹部的表面上，形成通过与基板的层间绝缘膜反应而成为自形成的阻挡膜的MnO x膜。 在MnO x膜的表面上进行氢自由基处理以减少MnO x膜的表面。 在通过氢自由基还原的MnO x膜的表面上通过CVD形成Ru膜。 通过PVD在Ru膜上形成Cu基膜以填充在凹部中。 当形成Ru膜时，设定MnO x膜的成膜条件和氢自由基工艺的条件，使得形成核容易，并且在表面光滑度高的状态下形成Ru膜。

公开(公告)号：US20150332961A1

公开(公告)日：2015-11-19

申请号：US14701555

申请日：2015-05-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro ISHIZAKA ,  Tatsuo HIRASAWA ,  Takashi SAKUMA ,  Osamu YOKOYAMA

IPC: H01L21/768

CPC classification number: H01L21/76882 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76883

Abstract: Cu wiring fabrication method for fabricating Cu wiring with respect to substrate having interlayer dielectric film having trench formed thereon, includes: forming barrier film on surface of the trench; forming Ru film on surface of the barrier film by CVD; burying the trench by forming Cu film or Cu alloy film on the Ru film; forming Cu film or Cu alloy film at corners of bottom of the trench while re-sputtering the formed Cu film or Cu alloy film in a condition where first formed Cu film or Cu alloy film re-sputtered by an ion action of the plasma generation gas; and subsequently burying the Cu film or the Cu alloy film in the trench in condition where the Cu film or the Cu alloy film is formed on field portion of the substrate, and reflows in the trench by an ion action of the plasma generation gas.

Abstract translation: 涉及在其上形成有沟槽的具有沟槽的层间绝缘膜的衬底制造Cu布线的Cu布线制造方法包括：在沟槽的表面上形成阻挡膜; 通过CVD在阻挡膜的表面上形成Ru膜; 通过在Ru膜上形成Cu膜或Cu合金膜来掩埋沟槽; 在沟槽底部的角落处形成Cu膜或Cu合金膜，同时在通过等离子体发生气体的离子作用重新溅射的第一次形成的Cu膜或Cu合金膜的条件下再溅射形成的Cu膜或Cu合金膜 ; 并且随后在衬底的场部形成Cu膜或Cu合金膜的状态下将Cu膜或Cu合金膜埋入沟槽中，并且通过等离子体产生气体的离子作用在沟槽中回流。

公开(公告)号：US20140287163A1

公开(公告)日：2014-09-25

申请号：US14297726

申请日：2014-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro ISHIZAKA ,  Atsushi GOMI ,  Takara FUKUSHIMA ,  Osamu YOKOYAMA ,  Takashi SAKUMA ,  Chiaki YASUMURO ,  Hiroyuki TOSHIMA ,  Tatsuo HATANO ,  Yasushi MIZUSAWA ,  Masamichi HARA ,  Kenzi SUZUKI

IPC: H01L21/02

CPC classification number: H01L21/02104 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345 ,  C23C14/541 ,  C23C14/5806 ,  C23C16/16 ,  H01J37/32899 ,  H01J37/34

Abstract: A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs.

Abstract translation: 提供了一种在衬底中形成的沟槽或孔中形成Cu布线的方法。 该方法包括在沟槽或孔的表面上形成阻挡膜，在阻挡膜上形成Ru膜，并且通过在使衬底退火的同时在PVD膜上形成Cu膜而将Cu嵌入沟槽或孔中，使得 发生铜进入沟槽或孔的迁移。

公开(公告)号：US20140090597A1

公开(公告)日：2014-04-03

申请号：US14044659

申请日：2013-10-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo HIRASAWA ,  Osamu YOKOYAMA ,  Chiaki YASUMURO ,  Toshiaki FUJISATO ,  Ryota YOSHIDA ,  Takashi SAKUMA ,  Cheonsoo HAN

IPC: H05F3/00 ,  C23C16/50

CPC classification number: H05F3/00 ,  C23C14/34 ,  C23C14/50 ,  C23C16/50 ,  H01J37/32568 ,  H01J37/34 ,  H01L21/6833

Abstract: In a plasma processing method, plasma processing is performed in a state where the object is attracted and held on the electrostatic chuck by applying a first voltage as an application voltage thereto and a thermal conduction gas is supplied to a gap between the electrostatic chuck and the object. The application voltage is decreased while stopping the supply of the thermal conduction gas and exhausting the thermal conduction gas remaining between the electrostatic chuck and the object upon completion of the plasma processing. The object is separated from the electrostatic chuck by setting the application voltage to the electrostatic chuck to zero after the application voltage is decreased.

Abstract translation: 在等离子体处理方法中，通过施加第一电压作为施加电压，将物体吸附并保持在静电卡盘上的状态下进行等离子体处理，并且向静电卡盘和静电卡盘之间的间隙供给导热气体 目的。 在等离子体处理完成时，施加电压降低，同时停止供给导热气体并排出残留在静电卡盘与物体之间的导热气体。 在施加电压降低之后，通过将静电卡盘的施加电压设定为零将物体与静电卡盘分离。