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公开(公告)号：US20240282578A1
公开(公告)日：2024-08-22
申请号：US18626719
申请日：2024-04-04
IPC分类号： H01L21/033 , C23C16/04 , H01L21/311
CPC分类号： H01L21/0337 , H01L21/31144 , C23C16/042
摘要： A substrate processing apparatus includes a chamber; a substrate support disposed in the chamber; a gas supply that supplies a gas into the chamber; and a controller that controls an overall operation of the substrate processing apparatus. The controller executes a process including: (a) placing a substrate on the substrate support, the substrate including an etching layer and a patterned mask on the etching layer; (b) forming a film on the patterned mask; (c) forming a reaction layer on the film; and (d) removing the reaction layer by applying energy to the reaction layer. In the step (c) a temperature of the substrate is set according to a thickness of the reaction layer to be formed.
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公开(公告)号：US20240030010A1
公开(公告)日：2024-01-25
申请号：US18225801
申请日：2023-07-25
发明人： Koki MUKAIYAMA , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01J37/32
CPC分类号： H01J37/32724 , H01J37/32816 , H01J2237/3342 , H01J2237/2001
摘要： An etching method includes: (a) providing a substrate including a base film and a mask having an opening and formed on the base film; (b) etching the base film using plasma; and (c) supplying hydrogen fluoride to the substrate under a pressure of 13.3 Pa or higher.
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公开(公告)号：US20230215707A1
公开(公告)日：2023-07-06
申请号：US18122553
申请日：2023-03-16
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , H01J37/32724 , H01J37/32568 , H01J37/32174 , H01J2237/334
摘要： An etching apparatus includes: a chamber; a substrate support disposed in the chamber; one or more heaters disposed in the substrate support; a gas supply; a plasma generator; a controller configured to perform an etching process comprising a plurality of cycles; and a heater controller. Each cycle includes: controlling the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask; and controlling the gas supply and the plasma generator to supply a process gas into the chamber and generate a plasma from the process gas in the chamber, thereby etching the film through the mask.
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14.发明申请公开(公告)号：US20220238315A1
公开(公告)日：2022-07-28
申请号：US17583224
申请日：2022-01-25
发明人： Satoshi OHUCHIDA , Koki MUKAIYAMA , Yusuke WAKO , Maju TOMURA , Yoshihide KIHARA
摘要： A substrate processing method includes: (a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus; (b) supplying a processing gas including hydrogen fluoride gas into the chamber; (c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and (d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure. In a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve.
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公开(公告)号：US20220122840A1
公开(公告)日：2022-04-21
申请号：US17560245
申请日：2021-12-22
发明人： Yoshihide KIHARA , Toru HISAMATSU , Tomoyuki OISHI
IPC分类号： H01L21/027 , H01L21/02 , H01L21/3213 , H01L21/033 , H01L21/311 , H01J37/32 , G03F1/80 , G03F1/48
摘要： According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK1), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK1) with plasma generated in a processing container (12), in the processing container (12) of a plasma processing apparatus (10) in which the wafer (W) is accommodated, and the step includes steps ST3a to ST4 of conformally forming a protective film (SX) on the surface of the mask (MK1), and steps ST6a to ST7 of etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK1) on which the protective film (SX) is formed.
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公开(公告)号：US20220115235A1
公开(公告)日：2022-04-14
申请号：US17298332
申请日：2019-07-12
IPC分类号： H01L21/033 , H01L21/311
摘要： A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.
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公开(公告)号：US20210327719A1
公开(公告)日：2021-10-21
申请号：US17362285
申请日：2021-06-29
IPC分类号： H01L21/311 , H01J37/32 , H01L21/3065 , H05H1/46
摘要： In an embodiment, in the method for processing a workpiece including an etching target layer containing silicon oxide, a mask provided on the etching target layer, and an opening provided in the mask and exposing the etching target layer, according to the embodiment, the etching target layer is etched by removing the etching target layer for each atomic layer through repetitive execution of a sequence of generating plasma of a first processing gas containing nitrogen, forming a mixed layer containing ions included in the plasma on an atomic layer on an exposed surface of the etching target layer, generating plasma of a second processing gas containing fluorine, and removing the mixed layer by radicals included in the plasma. The plasma of the second processing gas contains the radicals that remove the mixed layer containing silicon nitride.
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公开(公告)号：US20210143017A1
公开(公告)日：2021-05-13
申请号：US17090964
申请日：2020-11-06
IPC分类号： H01L21/311 , H01L21/3065 , H01J37/32 , H01J37/20
摘要： A technique protects a mask in plasma etching of a silicon-containing film. An etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask. The mask contains carbon. The etching method further includes etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen and phosphorus. The etching includes forming a carbon-phosphorus bond on a surface of the mask.
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公开(公告)号：US20210143016A1
公开(公告)日：2021-05-13
申请号：US16930483
申请日：2020-07-16
IPC分类号： H01L21/3065 , H01L21/02 , H01J37/32
摘要： An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.
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公开(公告)号：US20210111034A1
公开(公告)日：2021-04-15
申请号：US17107967
申请日：2020-12-01
发明人： Toru HISAMATSU , Masanobu HONDA , Yoshihide KIHARA
IPC分类号： H01L21/311 , H01L21/02 , H01L21/67 , H01L21/033 , H01L21/3065 , H01L21/027
摘要： A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which an underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing an anisotropic deposition to selectively form a deposition layer on a top portion of the mask.
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