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公开(公告)号:US11424142B2
公开(公告)日:2022-08-23
申请号:US16813952
申请日:2020-03-10
Applicant: Tokyo Electron Limited
Inventor: Yuji Mimura , Hiroshi Maeda , Satoshi Nishimura
IPC: H01L21/67 , H01L21/304 , H01L21/18 , H01L21/66 , G06T7/00 , H01J37/32 , B32B37/00 , H01J9/48 , B24B7/00 , H01J37/36 , B24D3/00
Abstract: A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.
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公开(公告)号:US20210249287A1
公开(公告)日:2021-08-12
申请号:US17049645
申请日:2019-04-10
Applicant: Tokyo Electron Limited
Inventor: Yuji Mimura , Shigeto Tsuruta , Eiji Manabe , Hisanori Hizume
IPC: H01L21/67 , H01L21/687 , G01N21/95 , G06T7/00
Abstract: A measuring method includes measuring a displacement A1, placing an imaging unit 20 at a position where the imaging unit is allowed to image a measurement mark M1 and imaging the measurement mark M1. In the measuring of the displacement A1, the displacement A1 of a surface of a combined substrate, which is composed of two sheets of substrates bonded to each other, on a side of the imaging unit 20 at a position where the measurement mark M1 for position deviation measurement, which is provided within the combined substrate, is placed is measured. In the imaging of the measurement mark M1, the measurement mark M1 is imaged by the imaging unit 20 while putting the measurement mark M1 in focus by moving a focal position back and forth with respect to a focal position which is previously set based on the displacement A1.
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公开(公告)号:US09401291B2
公开(公告)日:2016-07-26
申请号:US14525502
申请日:2014-10-28
Applicant: Tokyo Electron Limited
Inventor: Yuji Mimura , Tetsuya Maki , Shigeto Tsuruta , Tatsumi Oonishi , Daisuke Ikemoto , Takahiro Masunaga
CPC classification number: H01L21/6715 , B05C5/0254 , B05C11/1013 , B05C11/1047 , H01L21/67253
Abstract: A coating apparatus includes: a slit nozzle including a retention chamber that retains the coating material; a moving mechanism that moves the slit nozzle; a pressure regulation unit that regulates a pressure inside the retention chamber; and a control unit that controls the moving mechanism and the pressure regulation unit to relatively move the slit nozzle with respect to the substrate while changing the pressure inside the retention chamber toward an atmospheric pressure from a negative pressure, wherein the control unit is configured to control the pressure regulation unit so that a change in the pressure inside the retention chamber in a start zone including a coating start position and an end zone including a coating end position becomes slower than a change in the pressure inside the retention chamber in a middle zone except the start zone and the end zone.
Abstract translation: 涂布装置包括:狭缝喷嘴,其包括保持涂料的保留室; 使狭缝喷嘴移动的移动机构; 压力调节单元,其调节保持室内的压力; 以及控制单元,其控制所述移动机构和所述压力调节单元,以使所述狭缝喷嘴相对于所述基板相对移动,同时将所述保持室内的压力从负压变为大气压,其中,所述控制单元被配置为控制 压力调节单元,使得在包括涂层开始位置和包括涂层终止位置的端部区域的起始区域内的保持室内的压力变化比在中间区域中的保持室内部的压力变化慢,除了 起始区和结束区。
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公开(公告)号:US12157293B2
公开(公告)日:2024-12-03
申请号:US17820299
申请日:2022-08-17
Applicant: Tokyo Electron Limited
Inventor: Takashi Terada , Yuji Mimura , Hiroshi Maeda , Kazutaka Noda , Masaru Honda , Ryoichi Sakamoto , Yutaka Yamasaki , Tatsuya Kitayama , Akira Fukutomi
IPC: B32B43/00
Abstract: A separating method includes holding a combined substrate and separating a first substrate. In the holding of the combined substrate, the combined substrate in which the first substrate and a second substrate are bonded is held. In the separating of the first substrate, the first substrate is separated from the combined substrate, starting from a side surface of the combined substrate. The separating of the first substrate includes brining a fluid containing water into contact with the side surface.
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公开(公告)号:US20240079214A1
公开(公告)日:2024-03-07
申请号:US18262422
申请日:2022-01-13
Applicant: Tokyo Electron Limited
Inventor: Yuji Mimura , Hiroshi Maeda , Takuro Masuzumi , Takashi Terada , Masaru Honda , Ryoichi Sakamoto , Takashi Fuse , Yusuke Kubota
IPC: H01J37/32
CPC classification number: H01J37/32449 , H01J37/32743 , H01J37/32981 , H01J2237/336
Abstract: A surface modifying method of modifying a bonding surface of a substrate to be bonded to another substrate by plasma of a processing gas includes an adjusting process and a modifying process. In the adjusting process, an amount of moisture in a processing vessel is adjusted by supplying a humidified gas into the processing vessel allowed to accommodate the substrate therein. In the modifying process, the bonding surface of the substrate is modified by forming the plasma of the processing gas in the processing vessel in a state that the amount of moisture in the processing vessel is adjusted.
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公开(公告)号:US20220415673A1
公开(公告)日:2022-12-29
申请号:US17754659
申请日:2020-09-28
Applicant: Tokyo Electron Limited
Inventor: Yoshitaka Otsuka , Shigeto Tsuruta , Yuji Mimura , Hiroshi Maeda , Eiji Manabe , Hisanori Hizume , Shinichi Shinozuka , Hironori Tanoue
Abstract: A bonding system includes a bonding device, an inspection device and a controller. The bonding device forms a combined substrate by bonding a first substrate and a second substrate to each other. The inspection device inspects the combined substrate. The controller controls the inspection device. The controller includes a measurement controller, a comparison unit and a re-measurement controller. The measurement controller causes the inspection device to measure the combined substrate at a first number of measurement points. The comparison unit compares, with a reference, an inspection result including a deviation amount between the first substrate and the second substrate in the combined substrate based on a measurement result. The re-measurement controller causes the inspection device to re-measure the combined substrate at a second number of measurement points greater than the first number of measurement points based on a comparison result obtained by the comparison unit.
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公开(公告)号:US20220384386A1
公开(公告)日:2022-12-01
申请号:US17804163
申请日:2022-05-26
Applicant: Tokyo Electron Limited
Inventor: Yuji Mimura , Hiroshi Maeda , Takashi Terada , Masaru Honda , Ryoichi Sakamoto , Yutaka Yamasaki
Abstract: A bonding system includes a surface modifying apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate with plasma of a processing gas. The bonding apparatus is configured to bond two substrates modified by the surface modifying apparatus by an intermolecular force. The surface modifying apparatus includes: a processing chamber configured to accommodate therein the substrate; a processing gas supply configured to supply a processing gas containing moisture into the processing chamber; and a plasma forming unit configured to form the plasma of the processing gas containing the moisture.
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公开(公告)号:US20200343092A1
公开(公告)日:2020-10-29
申请号:US16573775
申请日:2019-09-17
Applicant: Tokyo Electron Limited
Inventor: Kiyotaka Imai , Hirokazu Aizawa , Hiroshi Maeda , Kaoru Maekawa , Yuji Mimura , Harunobu Suenaga
Abstract: Described herein is a method of bonding and/or debonding substrates. In one embodiment, at least one of the surfaces of the substrates to be bonded is comprised of an oxide. In one embodiment, the surfaces of both substrates comprise an oxide. A wet etch may then be utilized to debond the substrates by etching away the layers that have been bonded. In one embodiment, a fusion bonding process is utilized to bond two substrates, at least one substrate having a silicon oxide surface. In one exemplary etch, a dilute hydrofluoric (DHF) etch is utilized to etch the bonded silicon oxide surface, allowing for two bonded substrates to be debonded. In another embodiment, the silicon oxide may be a low density silicon oxide. In one embodiment, both substrates may have a surface layer of the low density silicon oxide which may be fusion bonded together.
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