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12 条记录 (耗时 0.017 秒)

    Bonding method for cleaning non-bonding surface of substrate
    1.
    发明授权
    Bonding method for cleaning non-bonding surface of substrate 有权

    公开(公告)号：US11626302B2

    公开(公告)日：2023-04-11

    申请号：US17813369

    申请日：2022-07-19

    申请人： Tokyo Electron Limited

    发明人： Yuji Mimura ,  Hiroshi Maeda ,  Satoshi Nishimura

    IPC分类号： H01J9/48 ,  H01L21/67 ,  H01J37/36 ,  H01L21/304 ,  H01L21/66 ,  G06T7/00 ,  H01L21/18 ,  H01J37/32 ,  B32B37/00 ,  B24B7/00 ,  B24D3/00

    摘要： A bonding system includes a surface modifying apparatus configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate; a surface hydrophilizing apparatus configured to hydrophilize the modified bonding surface of the first substrate and the modified bonding surface of the second substrate; a bonding apparatus configured to perform bonding of the hydrophilized bonding surface of the first substrate and the hydrophilized bonding surface of the second substrate in a state that the bonding surfaces face each other; and a cleaning apparatus configured to clean, before the bonding is performed, a non-bonding surface of, between the first substrate and the second substrate, at least one which is maintained flat when the bonding is performed, the not-bonding surface being opposite to the bonding surface.

    Method and structure for low density silicon oxide for fusion bonding and debonding
    2.
    发明授权
    Method and structure for low density silicon oxide for fusion bonding and debonding 有权

    公开(公告)号：US11315789B2

    公开(公告)日：2022-04-26

    申请号：US16573775

    申请日：2019-09-17

    申请人： Tokyo Electron Limited

    发明人： Kiyotaka Imai ,  Hirokazu Aizawa ,  Hiroshi Maeda ,  Kaoru Maekawa ,  Yuji Mimura ,  Harunobu Suenaga

    IPC分类号： H01L21/20 ,  H01L21/50

    摘要： Described herein is a method of bonding and/or debonding substrates. In one embodiment, at least one of the surfaces of the substrates to be bonded is comprised of an oxide. In one embodiment, the surfaces of both substrates comprise an oxide. A wet etch may then be utilized to debond the substrates by etching away the layers that have been bonded. In one embodiment, a fusion bonding process is utilized to bond two substrates, at least one substrate having a silicon oxide surface. In one exemplary etch, a dilute hydrofluoric (DHF) etch is utilized to etch the bonded silicon oxide surface, allowing for two bonded substrates to be debonded. In another embodiment, the silicon oxide may be a low density silicon oxide. In one embodiment, both substrates may have a surface layer of the low density silicon oxide which may be fusion bonded together.

    BONDING SYSTEM AND BONDING METHOD
    3.
    发明申请
    BONDING SYSTEM AND BONDING METHOD 审中-公开

    公开(公告)号：US20190312007A1

    公开(公告)日：2019-10-10

    申请号：US16374847

    申请日：2019-04-04

    申请人： Tokyo Electron Limited

    发明人： Atsushi Nagata ,  Hiroshi Maeda ,  Kenji Sugakawa

    IPC分类号： H01L23/00

    摘要： A bonding system includes a surface modifying apparatus, a surface hydrophilizing apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a first substrate and a bonding surface of a second substrate with plasma. The surface hydrophilizing apparatus is configured to hydrophilize the modified bonding surfaces of the first substrate and the second substrate. The bonding apparatus includes a condensation suppressing gas discharge unit, and is configured to bond the hydrophilized bonding surfaces of the first substrate and the second substrate by an intermolecular force. The condensation suppressing gas discharge unit is configured to discharge a condensation suppressing gas toward a space between a peripheral portion of the bonding surface of the first substrate and a peripheral portion of the bonding surface of the second substrate facing each other.

    BONDING SYSTEM AND INSPECTION METHOD OF INSPECTING COMBINED SUBSTRATE
    8.
    发明申请
    BONDING SYSTEM AND INSPECTION METHOD OF INSPECTING COMBINED SUBSTRATE 有权

    公开(公告)号：US20220415673A1

    公开(公告)日：2022-12-29

    申请号：US17754659

    申请日：2020-09-28

    申请人： Tokyo Electron Limited

    发明人： Yoshitaka Otsuka ,  Shigeto Tsuruta ,  Yuji Mimura ,  Hiroshi Maeda ,  Eiji Manabe ,  Hisanori Hizume ,  Shinichi Shinozuka ,  Hironori Tanoue

    IPC分类号： H01L21/67 ,  G06T7/00

    摘要： A bonding system includes a bonding device, an inspection device and a controller. The bonding device forms a combined substrate by bonding a first substrate and a second substrate to each other. The inspection device inspects the combined substrate. The controller controls the inspection device. The controller includes a measurement controller, a comparison unit and a re-measurement controller. The measurement controller causes the inspection device to measure the combined substrate at a first number of measurement points. The comparison unit compares, with a reference, an inspection result including a deviation amount between the first substrate and the second substrate in the combined substrate based on a measurement result. The re-measurement controller causes the inspection device to re-measure the combined substrate at a second number of measurement points greater than the first number of measurement points based on a comparison result obtained by the comparison unit.

    BONDING SYSTEM AND SURFACE MODIFICATION METHOD
    9.
    发明申请
    BONDING SYSTEM AND SURFACE MODIFICATION METHOD 有权

    公开(公告)号：US20220384386A1

    公开(公告)日：2022-12-01

    申请号：US17804163

    申请日：2022-05-26

    申请人： Tokyo Electron Limited

    发明人： Yuji Mimura ,  Hiroshi Maeda ,  Takashi Terada ,  Masaru Honda ,  Ryoichi Sakamoto ,  Yutaka Yamasaki

    IPC分类号： H01L23/00 ,  H01J37/32

    摘要： A bonding system includes a surface modifying apparatus and a bonding apparatus. The surface modifying apparatus is configured to modify a bonding surface of a substrate to be bonded to another substrate with plasma of a processing gas. The bonding apparatus is configured to bond two substrates modified by the surface modifying apparatus by an intermolecular force. The surface modifying apparatus includes: a processing chamber configured to accommodate therein the substrate; a processing gas supply configured to supply a processing gas containing moisture into the processing chamber; and a plasma forming unit configured to form the plasma of the processing gas containing the moisture.

    Method And Structure for Low Density Silicon Oxide for Fusion Bonding and Debonding
    10.
    发明申请
    Method And Structure for Low Density Silicon Oxide for Fusion Bonding and Debonding 审中-公开

    公开(公告)号：US20200343092A1

    公开(公告)日：2020-10-29

    申请号：US16573775

    申请日：2019-09-17

    申请人： Tokyo Electron Limited

    发明人： Kiyotaka Imai ,  Hirokazu Aizawa ,  Hiroshi Maeda ,  Kaoru Maekawa ,  Yuji Mimura ,  Harunobu Suenaga

    IPC分类号： H01L21/20 ,  H01L21/50

    摘要： Described herein is a method of bonding and/or debonding substrates. In one embodiment, at least one of the surfaces of the substrates to be bonded is comprised of an oxide. In one embodiment, the surfaces of both substrates comprise an oxide. A wet etch may then be utilized to debond the substrates by etching away the layers that have been bonded. In one embodiment, a fusion bonding process is utilized to bond two substrates, at least one substrate having a silicon oxide surface. In one exemplary etch, a dilute hydrofluoric (DHF) etch is utilized to etch the bonded silicon oxide surface, allowing for two bonded substrates to be debonded. In another embodiment, the silicon oxide may be a low density silicon oxide. In one embodiment, both substrates may have a surface layer of the low density silicon oxide which may be fusion bonded together.