公开(公告)号：US11171020B2

公开(公告)日：2021-11-09

申请号：US16548263

申请日：2019-08-22

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi Nakaoka ,  Katsuhiro Sato ,  Hiroaki Ashidate ,  Shinsuke Muraki ,  Yuji Hashimoto

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment tank, a container, a measuring instrument, and a controller. The treatment tank stores a chemical solution to treat a substrate. The container contains a liquid including ammonia from which a gas discharged from the treatment tank is gas-liquid separated. The measuring instrument measures an amount of the ammonia included in the liquid over time. The controller controls the treatment of the substrate based on the amount of the ammonia.

公开(公告)号：US10978316B2

公开(公告)日：2021-04-13

申请号：US16045786

申请日：2018-07-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Satoshi Nakaoka ,  Tomohiko Sugita ,  Shinsuke Kimura ,  Hiroaki Ashidate ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/677 ,  B08B3/10 ,  B08B3/08

Abstract: A semiconductor processing device according to an embodiment includes a processing tank configured to store a chemical therein to allow a semiconductor substrate to be immersed in the chemical. A gas supply part is provided below the semiconductor substrate accommodated in the processing tank and is configured to supply air bubbles to the chemical from below the semiconductor substrate. A chemical supply part is provided above the gas supply part and below the semiconductor substrate and is configured to discharge the chemical caused to circulate from the processing tank, towards the air bubbles appearing from the gas supply part.

公开(公告)号：US10714328B2

公开(公告)日：2020-07-14

申请号：US15904595

申请日：2018-02-26

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tomonori Harada ,  Tatsuhiko Koide ,  Katsuhiro Sato

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/67

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a supporter configured to support a wafer. The apparatus further includes a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion. The apparatus further includes a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion. The apparatus further includes a first liquid feeder configured to feed a first liquid for processing the wafer to the first region, a first gas feeder configured to feed a first gas between the wafer and the first portion, and a second gas feeder configured to feed a second gas between the wafer and the second portion.

公开(公告)号：US20190385867A1

公开(公告)日：2019-12-19

申请号：US16268538

申请日：2019-02-06

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tomohiko SUGITA ,  Katsuhiro Sato ,  Hiroaki Ashidate

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/306 ,  H01L21/02

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a substrate holder configured to hold a plurality of substrates such that the substrates are arranged in parallel to each other. The apparatus further includes a fluid injector including a plurality of openings that inject fluid to areas in which distances from surfaces of the substrates are within distances between centers of the substrates adjacent to each other, the fluid injector being configured to change injection directions of the fluid injected from the openings in planes that are parallel to the surfaces of the substrates by self-oscillation.

公开(公告)号：US10192733B2

公开(公告)日：2019-01-29

申请号：US15440896

申请日：2017-02-23

Applicant: Toshiba Memory Corporation

Inventor： Junichi Igarashi ,  Katsuhiro Sato ,  Masaaki Hirakawa

IPC: H01L21/02 ,  B08B3/08 ,  B08B3/10 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/108

Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.

公开(公告)号：US10096486B2

公开(公告)日：2018-10-09

申请号：US15264960

申请日：2016-09-14

Applicant: Toshiba Memory Corporation

Inventor： Shinsuke Muraki ,  Katsuhiro Sato ,  Hiroaki Yamada

IPC: H01L21/461 ,  H01L21/3213 ,  C23F1/16 ,  H01L21/67 ,  C23F1/14 ,  C23F1/18

Abstract: In one embodiment, a substrate processing liquid contains phosphoric acid as a primary component and contains water and ketone. In another embodiment, a substrate processing method includes processing a substrate in a substrate processing bath with a substrate processing liquid containing phosphoric acid, water and ketone. The method further includes discharging the substrate processing liquid from the substrate processing bath to a circulating flow channel, heating the substrate processing liquid flowing through the circulating flow channel at a temperature between 50° C. and 90° C., and supplying the substrate processing liquid again from the circulating flow channel to the substrate processing bath to circulate the substrate processing liquid under heating.

公开(公告)号：US20180233383A1

公开(公告)日：2018-08-16

申请号：US15703630

申请日：2017-09-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroaki ASHIDATE ,  Hiroyasu Iimori ,  Katsuhiro Sato

IPC: H01L21/67 ,  H01L21/311

CPC classification number: H01L21/6708 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/31111 ,  H01L21/67086 ,  H01L21/67253

Abstract: According to an embodiment, a substrate treatment apparatus includes a tank and a control mechanism. The tank houses a substrate including a silicon oxide film and a silicon nitride film, and receives a supply of a phosphoric acid solution capable of selectively etching the silicon nitride film rather than the silicon oxide film. The control mechanism controls an etching state of the silicon nitride film in the tank, by alternately switching two modes based on preset time allocation. The two modes include a first mode in which a first phosphoric acid solution is contact with the substrate and a second mode in which a second phosphoric acid solution with a selection ratio of the silicon nitride film to the silicon oxide film different from that of the first phosphoric acid solution, is contact with the substrate.

公开(公告)号：US09934958B2

公开(公告)日：2018-04-03

申请号：US14644772

申请日：2015-03-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Katsuhiro Sato ,  Junichi Igarashi

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01L21/67028 ,  H01L21/67253

Abstract: The substrate treatment apparatus includes a first nozzle, a second nozzle, a detector, and a controller. The first nozzle supplies an organic sublimable material-containing liquid capable of displacing a rinsing liquid, to a surface of a substrate treated with the rinsing liquid. The second nozzle supplies vapor of a solvent in which the organic sublimable material is capable of dissolving, to the surface of the substrate. The detector detects a first physical amount of the vapor on the surface of the substrate. The controller controls a second physical amount of the vapor according to the first physical amount.