公开(公告)号：US20090253272A1

公开(公告)日：2009-10-08

申请号：US12382983

申请日：2009-03-27

申请人： Tadashi Terasaki

发明人： Tadashi Terasaki

IPC分类号： H01L21/316 ,  C23C16/513

CPC分类号： H01L21/31662 ,  C23C16/308 ,  C23C16/503 ,  H01L21/0214 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/3145

摘要： A gate insulating film with less leakage current is formed, while a surface temperature of a silicon substrate is decreased. Gas containing oxygen atoms and nitrogen atoms is supplied into a processing chamber, then the gas containing the oxygen atoms and the nitrogen atoms is activated by plasma, and the silicon substrate is subjected to processing by plasma, and a silicon dioxide film containing nitrogen is formed.

摘要翻译： 形成具有较小漏电流的栅极绝缘膜，而硅衬底的表面温度降低。 将含有氧原子和氮原子的气体供给到处理室中，然后通过等离子体激活含有氧原子和氮原子的气体，并且通过等离子体对硅衬底进行加工，形成含氮的二氧化硅膜 。

公开(公告)号：US06794308B2

公开(公告)日：2004-09-21

申请号：US09727547

申请日：2000-12-04

申请人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

发明人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

IPC分类号： H01L2131

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/4557 ,  C23C16/4558

摘要： A method of reducing by-product deposition inside wafer processing equipment includes providing a chamber having a peripheral inner wall and placing a semiconductor wafer within the chamber. The method also includes placing a ring within the chamber proximate the peripheral inner wall and introducing a plurality of reactant gases into the chamber and reacting the gases. The method also includes introducing a heated gas into the chamber through the ring proximate the peripheral inner wall to increase the temperature of the peripheral inner wall.

摘要翻译： 减少晶片处理设备内的副产物沉积的方法包括提供具有周边内壁并将半导体晶片放置在室内的室。 该方法还包括将腔环放置在邻近周边内壁的腔室内，并将多个反应气体引入腔室并使气体反应。 该方法还包括通过靠近周围内壁的环将加热的气体引入室中，以增加周边内壁的温度。

公开(公告)号：US20100123183A1

公开(公告)日：2010-05-20

申请号：US12622816

申请日：2009-11-20

申请人： Katsuhiko YAMAMOTO ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

发明人： Katsuhiko YAMAMOTO ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28282 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7885

摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。

公开(公告)号：US07045447B2

公开(公告)日：2006-05-16

申请号：US10396323

申请日：2003-03-26

申请人： Unryu Ogawa ,  Naoya Yamakado ,  Tadashi Terasaki ,  Shinji Yashima

发明人： Unryu Ogawa ,  Naoya Yamakado ,  Tadashi Terasaki ,  Shinji Yashima

IPC分类号： H01L21/3205 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02164 ,  C23C8/36 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/5093 ,  C23C16/56 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202

摘要： A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.

摘要翻译： 一种使用等离子体处理装置的半导体器件制造方法，包括处理室，在处理室中支撑基板的基板支撑体和设置在处理室周围的圆筒形电极和力线形成部件的磁力线，包括成形 然后通过改变衬底支撑体的高频阻抗，然后通过由等离子体活化的活性氮的氮氧化氧化膜，连续地形成氮氧化物膜。

公开(公告)号：US08071446B2

公开(公告)日：2011-12-06

申请号：US12457493

申请日：2009-06-12

申请人： Tadashi Terasaki

发明人： Tadashi Terasaki

IPC分类号： H01L21/316

CPC分类号： H01L21/32138 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3405 ,  H01L21/28247 ,  H01L21/28273 ,  H01L29/517

摘要： A manufacturing method of a semiconductor device, including the steps of: loading into a processing chamber a substrate having a high dielectric gate insulating film and a metal electrode, with a side wall exposed by etching; applying oxidation processing to the substrate by supplying thereto hydrogen-containing gas and oxygen-containing gas excited by plasma, with the substrate heated to a temperature not allowing the high dielectric gate insulating film to be crystallized, in the processing chamber; and unloading the substrate after processing from the processing chamber.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：将具有高电介质栅极绝缘膜和金属电极的衬底加载到具有通过蚀刻暴露的侧壁的处理室中; 通过向处理室中的含有氢的气体和由等离子体激发的含氧气体供给氧化处理，将基板加热到不允许高介电栅极绝缘膜的温度结晶的温度; 以及从处理室处理后卸载基板。

公开(公告)号：US20080096395A1

公开(公告)日：2008-04-24

申请号：US10594739

申请日：2005-07-27

申请人： Tadashi Terasaki ,  Unryu Ogawa ,  Masanori Nakayama

发明人： Tadashi Terasaki ,  Unryu Ogawa ,  Masanori Nakayama

IPC分类号： H01L21/31

CPC分类号： H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/3165 ,  H01L29/518

摘要： Disclosed is a producing method of a semiconductor device comprising: film thinning a silicon oxide film by heating the silicon oxide film formed after a surface of a silicon substrate is etched by chemical liquid, and one of thermal oxidizing by heating the thinned silicon oxide film to oxidize the silicon oxide film by gas including at least oxygen, and plasma oxidizing the thinned silicon oxide film by plasma discharged gas including at least oxygen.

摘要翻译： 本发明公开了一种半导体器件的制造方法，其特征在于，包括：通过加热在硅衬底的表面被化学液体蚀刻后形成的氧化硅膜，使氧化硅膜变薄，将氧化硅薄膜加热而进行热氧化， 通过至少包含氧的气​​体氧化氧化硅膜，以及通过至少包括氧的等离子体排放气体等离子体氧化该薄化的氧化硅膜。

公开(公告)号：US06730613B1

公开(公告)日：2004-05-04

申请号：US09354459

申请日：1999-07-15

申请人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

发明人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

IPC分类号： H01L2131

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/4557 ,  C23C16/4558

摘要： A method of reducing by-product deposition inside wafer processing equipment includes providing a chamber having a peripheral inner wall and placing a semiconductor wafer within the chamber. The method also includes placing a ring within the chamber proximate the peripheral inner wall and introducing a plurality of reactant gases into the chamber and reacting the gases. The method also includes introducing a heated gas into the chamber through the ring proximate the peripheral inner wall to increase the temperature of the peripheral inner wall.