中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

28 records (took 0.021 seconds)

    Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device
    11.
    发明授权
    Method of manufacturing a semiconductor device and apparatus for manufacturing the semiconductor device 有权

    公开(公告)号：US11320747B2

    公开(公告)日：2022-05-03

    申请号：US17121542

    申请日：2020-12-14

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Shinn-Sheng Yu ,  Ru-Gun Liu ,  Hsu-Ting Huang ,  Kenji Yamazoe ,  Minfeng Chen ,  Shuo-Yen Chou ,  Chin-Hsiang Lin

    IPC: G03F7/20

    Abstract: Photolithography apparatus includes a radiation source, a mask to modify radiation from the radiation source so the radiation exposes photoresist layer disposed on a semiconductor substrate in patternwise manner, a wafer stage, and a controller. The wafer stage supports the semiconductor substrate. The controller determines target total exposure dose for the photoresist layer and target focus position for the photoresist layer; and controls exposure of first portion of the photoresist layer to first exposure dose of radiation at first focus position using first portion of the mask, moving the semiconductor substrate relative to the mask; and exposure of the first portion of the photoresist layer to second exposure dose of radiation using second portion of the mask at second focus position, and exposure of second portion of the photoresist layer to the second exposure dose at the second focus position using the first portion of the mask.

    METHOD OF MAKING AN EXTREME ULTRAVIOLET PELLICLE
    13.
    发明申请
    METHOD OF MAKING AN EXTREME ULTRAVIOLET PELLICLE 有权
    制备极端超紫外线胶囊的方法

    公开(公告)号：US20160109798A1

    公开(公告)日：2016-04-21

    申请号：US14980469

    申请日：2015-12-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Tsung Shih ,  Tien-Hsi Lee ,  Chia-Jen Chen ,  Shang-Chieh Chien ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03F1/64

    CPC classification number: G03F1/64 ,  B29C71/02 ,  B29C2071/022 ,  G03F1/62 ,  G03F7/2002

    Abstract: The present disclosure relates to a method of forming an extreme ultraviolet (EUV) pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate. A pellicle frame is attached to an upper surface of the substrate, and the substrate is cleaved along the cleaving plane to form a pellicle film attached to the pellicle frame. The method forms the pellicle without using a support structure, which may block EUV radiation and cause substantial non-uniformities in the intensity of EUV radiation incident on an EUV reticle.

    Abstract translation: 本发明涉及一种形成极紫外（EUV）防护薄膜组件的方法，所述防护薄膜组件具有连接到没有支撑网的防护薄膜框架上的防护薄膜组件及相关装置。 在一些实施例中，通过在衬底内形成切割平面来执行该方法。 防护薄膜组件框架附接到基板的上表面，并且基板沿着切割平面被切割以形成附着到防护薄膜框架上的防护薄膜组件。 该方法不使用支撑结构形成防护薄膜组件，其可以阻挡EUV辐射并且在EUV掩模版上入射的EUV辐射的强度引起实质上的不均匀性。

    Extreme Ultraviolet Lithography System, Device, and Method for Printing Low Pattern Density Features
    16.
    发明申请
    Extreme Ultraviolet Lithography System, Device, and Method for Printing Low Pattern Density Features 审中-公开

    公开(公告)号：US20190121228A1

    公开(公告)日：2019-04-25

    申请号：US16220324

    申请日：2018-12-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yen-Cheng Lu ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03F1/26 ,  G03F7/20

    Abstract: A lithography system includes a radiation source configured to generate an extreme ultraviolet (EUV) light. The lithography system includes a mask that defines one or more features of an integrated circuit (IC). The lithography system includes an illuminator configured to direct the EUV light onto the mask. The mask diffracts the EUV light into a 0-th order ray and a plurality of higher order rays. The lithography system includes a wafer stage configured to secure a wafer that is to be patterned according to the one or more features defined by the mask. The lithography system includes a pupil phase modulator positioned in a pupil plane that is located between the mask and the wafer stage. The pupil phase modulator is configured to change a phase of the 0-th order ray.

    Method of making an extreme ultraviolet pellicle
    19.
    发明授权
    Method of making an extreme ultraviolet pellicle 有权
    制造极紫外线防护薄膜的方法

    公开(公告)号：US09256123B2

    公开(公告)日：2016-02-09

    申请号：US14259194

    申请日：2014-04-23

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Tsung Shih ,  Tien-Hsi Lee ,  Chia-Jen Chen ,  Shang-Chieh Chien ,  Shinn-Sheng Yu ,  Jeng-Horng Chen ,  Anthony Yen

    IPC: G03F1/64 ,  G03F7/20 ,  B29C71/02

    CPC classification number: G03F1/64 ,  B29C71/02 ,  B29C2071/022 ,  G03F1/62 ,  G03F7/2002

    Abstract: The present disclosure relates to a method of forming an EUV pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate at a position parallel to a top surface of the substrate. A pellicle frame is attached to the top surface of the substrate. The substrate is cleaved along the cleaving plane to form a pellicle film comprising a thinned substrate coupled to the pellicle frame. Prior to cleaving the substrate, the substrate is operated upon to reduce structural damage to the top surface of substrate during formation of the cleaving plane and/or during cleaving the substrate. Reducing structural damage to the top surface of the substrate improves the durability of the thinned substrate and removes a need for a support structure for the pellicle film.

    Abstract translation: 本发明涉及一种形成具有连接到没有支撑网的防护薄膜框架的防护薄膜组件的EUV防护薄膜组件的方法，以及相关联的装置。 在一些实施例中，该方法通过在平行于衬底顶表面的位置处在衬底内形成切割平面来进行。 防护薄膜组件框架附接到基板的顶表面。 基底沿着切割平面切割以形成防护薄膜，该薄膜包含连接到防护薄膜框架上的薄化基底。 在切割基板之前，操作基板以在形成切割平面期间和/或在分离基板期间减少对基板顶表面的结构损伤。 降低对基板顶表面的结构损伤提高了薄板基板的耐久性，并且消除了对防护薄膜的支撑结构的需要。

Patent Agency Ranking