公开(公告)号：US10014218B1

公开(公告)日：2018-07-03

申请号：US15492525

申请日：2017-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Fu Shih ,  Cheng-Lin Huang ,  Chien-Chen Li ,  Che-Jung Chu ,  Wen-Ming Chen ,  Kuo-Chio Liu

IPC: H01L23/48 ,  H01L21/78 ,  H01L23/00 ,  H01L23/544 ,  H01L21/56 ,  H01L23/522 ,  H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/486 ,  H01L21/561 ,  H01L21/563 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/544 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/97 ,  H01L2223/5446 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/11011 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/13011 ,  H01L2224/13013 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/14131 ,  H01L2224/16146 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2224/2919 ,  H01L2224/3003 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2224/11 ,  H01L21/304

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor structure. The semiconductor structure has a central portion and a peripheral portion surrounding the central portion. The method includes forming first conductive bumps and dummy conductive bumps over a surface of the semiconductor structure. The first conductive bumps are over the central portion and electrically connected to the semiconductor structure. The dummy conductive bumps are over the peripheral portion and electrically insulated from the semiconductor structure. The first conductive bumps each have a first thickness and a first width. The dummy conductive bumps each have a second thickness and a second width. The second thickness is less than the first thickness. The second width is greater than the first width.

公开(公告)号：US20230395461A1

公开(公告)日：2023-12-07

申请号：US17833208

申请日：2022-06-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Yi Lin ,  Kuang-Chun Lee ,  Chien-Chen Li ,  Chien-Li Kuo ,  Kuo-Chio Liu

IPC: H01L23/427 ,  H01L25/065 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L23/4275 ,  H01L25/0655 ,  H01L21/4882 ,  H01L23/49833 ,  H01L2924/35121 ,  H01L2924/3511 ,  H01L2924/1611 ,  H01L2924/1616 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/1632 ,  H01L2924/1659 ,  H01L2924/165 ,  H01L24/73

Abstract: Package structures and methods of forming package structures are discussed. A package structure, in accordance with some embodiments, includes a package component with one or more integrated circuits adhered to a package substrate, a hybrid thermal interface material utilizing a combination of polymer based material with high elongation values and metal based material with high thermal conductivity values. The polymer based thermal interface material placed on the edge of the package component contains the metal based thermal interface material in liquid form.

公开(公告)号：US20230290747A1

公开(公告)日：2023-09-14

申请号：US17826519

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Hung Chen ,  Cheng-Pu Chiu ,  Chien-Chen Li ,  Chien-Li Kuo ,  Ting-Ting Kuo ,  Li-Hsien Huang ,  Yao-Chun Chuang ,  Jun He

IPC: H01L23/00 ,  H01L25/10 ,  H01L23/31 ,  H01L23/538 ,  H01L21/683 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L24/06 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/20 ,  H01L25/105 ,  H01L2221/68359 ,  H01L2224/06519 ,  H01L2224/214 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/1094

Abstract: Embodiments provide metal features which dissipate heat generated from a laser drilling process for exposing dummy pads through a dielectric layer. Because the dummy pads are coupled to the metal features, the metal features act as a heat dissipation feature to pull heat from the dummy pad. As a result, reduction in heat is achieved at the dummy pad during the laser drilling process.