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公开(公告)号：US09434076B2
公开(公告)日：2016-09-06
申请号：US13959851
申请日：2013-08-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Lee-Chuan Tseng , Chih-Jen Chan , Shih-Wei Lin , Che-Ming Chang , Chung-Yen Chou , Yuan-Chih Hsieh
IPC: B25J11/00 , B25J15/00 , H01L21/677 , H01L21/687
CPC classification number: B25J11/0095 , B25J15/0014 , H01L21/67766 , H01L21/68707
Abstract: The present disclosure relates to a wafer transfer robot having a robot blade that can be used to handle substrates that are patterned on both sides without causing warpage of the substrates. In some embodiments, the wafer transfer robot has a robot blade coupled to a transfer arm that varies a position of the robot blade. The robot blade has a wafer reception area that receives a substrate. Two or more spatially distinct contact points are located at positions along a perimeter of the wafer reception area that provide support to opposing edges of the substrate. The two or more contact points are separated by a cavity in the robot blade. The cavity mitigates contact between a backside of the substrate and the robot blade, while providing support to opposing sides of the substrate to prevent warpage of the substrate.
Abstract translation: 本公开涉及具有机器人刀片的晶片传送机器人，其可以用于处理在两侧上被图案化的基板，而不会引起基板的翘曲。 在一些实施例中，晶片传送机器人具有联接到改变机器人刀片的位置的传送臂的机器人刀片。 机器人刀片具有接收衬底的晶片接收区域。 两个或更多个空间上不同的接触点位于沿着晶片接收区域的周边的位置，该位置为衬底的相对边缘提供支撑。 两个或多个接触点由机器人刀片中的空腔分开。 该腔减轻了衬底的背面与机器人刀片之间的接触，同时为衬底的相对侧提供支撑以防止衬底翘曲。
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公开(公告)号：US20150044008A1
公开(公告)日：2015-02-12
申请号：US13959851
申请日：2013-08-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Lee-Chuan Tseng , Chih-Jen Chan , Shih-Wei Lin , Che-Ming Chang , Chung-Yen Chou , Yuan-Chih Hsieh
IPC: B25J11/00 , H01L21/683 , H01L21/677 , B25J15/06
CPC classification number: B25J11/0095 , B25J15/0014 , H01L21/67766 , H01L21/68707
Abstract: The present disclosure relates to a wafer transfer robot having a robot blade that can be used to handle substrates that are patterned on both sides without causing warpage of the substrates. In some embodiments, the wafer transfer robot has a robot blade coupled to a transfer arm that varies a position of the robot blade. The robot blade has a wafer reception area that receives a substrate. Two or more spatially distinct contact points are located at positions along a perimeter of the wafer reception area that provide support to opposing edges of the substrate. The two or more contact points are separated by a cavity in the robot blade. The cavity mitigates contact between a backside of the substrate and the robot blade, while providing support to opposing sides of the substrate to prevent warpage of the substrate.
Abstract translation: 本公开涉及具有机器人刀片的晶片传送机器人，其可以用于处理在两侧上被图案化的基板，而不会引起基板的翘曲。 在一些实施例中，晶片传送机器人具有联接到改变机器人刀片的位置的传送臂的机器人刀片。 机器人刀片具有接收衬底的晶片接收区域。 两个或更多个空间上不同的接触点位于沿着晶片接收区域的周边的位置，该位置为基板的相对边缘提供支撑。 两个或多个接触点由机器人刀片中的空腔分开。 该腔减轻了衬底的背面与机器人刀片之间的接触，同时为衬底的相对侧提供支撑以防止衬底翘曲。
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公开(公告)号：US12265262B2
公开(公告)日：2025-04-01
申请号：US18362121
申请日：2023-07-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Wei Lin
Abstract: Structures and methods including a waveguide having a cladding layer surrounding a core layer disposed over a substrate, a cavity extending into the substrate adjacent the waveguide, a fiber disposed in the cavity, and an isolation space extending into the substrate and disposed under the waveguide. A plurality of holes may extend through the cladding layer adjacent the core layer.
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公开(公告)号：US12043537B2
公开(公告)日：2024-07-23
申请号：US16990106
申请日：2020-08-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Wei Lin , Chang-Ming Wu , Ting-Jung Chen
CPC classification number: B81B3/001 , B81B1/004 , B81B3/0021 , B81C1/00158 , B81C1/00531 , B81C1/00571 , B81B2201/0257 , B81B2203/0127 , B81B2203/053
Abstract: The present disclosure provides a method of manufacturing a MEMS device. In some embodiments, a first interlayer dielectric layer is formed over a substrate, and a diaphragm is formed over the first interlayer dielectric layer. Then, a second interlayer dielectric layer is formed over the diaphragm. A first etch is performed to form an opening through the second interlayer dielectric layer and the diaphragm and reaching into an upper portion of the first interlayer dielectric layer. A second etch is performed to the first interlayer dielectric layer and the second interlayer dielectric layer to form recesses above and below the diaphragm and to respectively expose a portion of a top surface and a portion of a bottom surface of the diaphragm. A sidewall stopper is formed along a sidewall of the diaphragm into the recesses of the first interlayer dielectric layer and the second interlayer dielectric layer.
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公开(公告)号：US11209673B2
公开(公告)日：2021-12-28
申请号：US16733488
申请日：2020-01-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Wei Lin , Ming Chyi Liu
Abstract: Various embodiments of the present disclosure are directed towards a modulator device including a first waveguide and a heater structure. An input terminal is configured to receive impingent light. The first waveguide has a first output region and a first input region coupled to the input terminal. A second waveguide is optically coupled to the first waveguide. The second waveguide has a second output region and a second input region coupled to the input terminal. An output terminal is configured to provide outgoing light that is modulated based on the impingent light. The output terminal is coupled to the first output region and the second output region. The heater structure overlies the first waveguide. A bottom surface of the heater structure is aligned with a bottom surface of the first waveguide. The first waveguide is spaced laterally between sidewalls of the heater structure.
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Patent Agency Ranking
公开(公告)号：US11203522B2
公开(公告)日：2021-12-21
申请号：US16990092
申请日：2020-08-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Wei Lin , Chang-Ming Wu , Ting-Jung Chen
Abstract: The present disclosure relates to a microphone. In some embodiments, the microphone may comprise a diaphragm, a backplate, and a sidewall stopper. The diaphragm has a venting hole disposed therethrough. The backplate is disposed over and spaced apart from the diaphragm. The sidewall stopper is disposed along a sidewall of the diaphragm exposing to the venting hole. Thus, the sidewall stopper is not limited by a distance between the movable part and the stable part of the microphone. Also, the sidewall stopper does not alternate the shape of movable part, and thus will less likely introduce crack to the movable part. In some embodiments, the sidewall stopper may be formed like a sidewall stopper by a self-alignment process, such that no extra mask is needed.
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公开(公告)号：US20200369512A1
公开(公告)日：2020-11-26
申请号：US16990106
申请日：2020-08-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Wei Lin , Chang-Ming Wu , Ting-Jung Chen
Abstract: The present disclosure relates to a method of manufacturing a MEMS device. In some embodiments, a first interlayer dielectric layer is formed over a substrate, and a diaphragm is formed over the first interlayer dielectric layer. Then, a second interlayer dielectric layer is formed over the diaphragm. A first etch is performed to form an opening through the second interlayer dielectric layer and the diaphragm and reaching into an upper portion of the first interlayer dielectric layer. A second etch is performed to the first interlayer dielectric layer and the second interlayer dielectric layer to form recesses above and below the diaphragm and to respectively expose a portion of a top surface and a portion of a bottom surface of the diaphragm. A sidewall stopper is formed along a sidewall of the diaphragm into the recesses of the first interlayer dielectric layer and the second interlayer dielectric layer.
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公开(公告)号：US20200369511A1
公开(公告)日：2020-11-26
申请号：US16990092
申请日：2020-08-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Wei Lin , Chang-Ming Wu , Ting-Jung Chen
Abstract: The present disclosure relates to a microphone. In some embodiments, the microphone may comprise a diaphragm, a backplate, and a sidewall stopper. The diaphragm has a venting hole disposed therethrough. The backplate is disposed over and spaced apart from the diaphragm. The sidewall stopper is disposed along a sidewall of the diaphragm exposing to the venting hole. Thus, the sidewall stopper is not limited by a distance between the movable part and the stable part of the microphone. Also, the sidewall stopper does not alternate the shape of movable part, and thus will less likely introduce crack to the movable part. In some embodiments, the sidewall stopper may be formed like a sidewall stopper by a self-alignment process, such that no extra mask is needed.
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公开(公告)号：US10273140B2
公开(公告)日：2019-04-30
申请号：US14599218
申请日：2015-01-16
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yi-Hsien Chang , Tzu-Heng Wu , Chun-Ren Cheng , Shih-Wei Lin , Jung-Kuo Tu
Abstract: A substrate structure for a micro electro mechanical system (MEMS) device, a semiconductor structure and a method for fabricating the same are provided. In various embodiments, the substrate structure for the MEMS device includes a substrate, the MEMS device, and an anti-stiction layer. The MEMS device is over the substrate. The anti-stiction layer is on a surface of the MEMS device, and includes amorphous carbon, polytetrafluoroethene, hafnium oxide, tantalum oxide, zirconium oxide, or a combination thereof.
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公开(公告)号：US20170158500A1
公开(公告)日：2017-06-08
申请号：US15436938
申请日：2017-02-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Che-Ming Chang , Chih-Jen Chan , Chung-Yen Chou , Lee-Chuan Tseng , Shih-Wei Lin , Yuan-Chih Hsieh
IPC: B81C1/00 , B81B1/00 , B01L3/00 , G01N27/414
CPC classification number: B81C1/00595 , B01L3/502707 , B01L2200/10 , B01L2300/0887 , B81B1/002 , B81B2201/0214 , B81B2207/07 , B81B2207/096 , B81C1/00 , G01N27/4145 , H01L21/2007 , H01L23/49816 , H01L23/528 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/32 , H01L24/80 , H01L24/83 , H01L2224/02372 , H01L2224/0239 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05184 , H01L2224/05569 , H01L2224/0557 , H01L2224/08225 , H01L2224/13024 , H01L2224/13025 , H01L2224/131 , H01L2224/13124 , H01L2224/13147 , H01L2224/13184 , H01L2224/2919 , H01L2224/32225 , H01L2224/80801 , H01L2224/8385 , H01L2924/1306 , H01L2924/1461 , H01L2924/15311 , H01L2924/014 , H01L2924/00014 , H01L2924/01029 , H01L2924/01013 , H01L2924/01074
Abstract: A bio-sensing semiconductor structure is provided. A transistor includes a channel region and a gate underlying the channel region. A first dielectric layer overlies the transistor. A first opening extends through the first dielectric layer to expose the channel region. A bio-sensing layer lines the first opening and covers an upper surface of the channel region. A second dielectric layer lines the first opening over the bio-sensing layer. A second opening within the first opening extends to the bio-sensing layer, through a region of the second dielectric layer overlying the channel region. A method for manufacturing the bio-sensing semiconductor structure is also provided.
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