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    SOURCE/DRAIN FEATURE SEPARATION STRUCTURE
    2.
    发明公开
    SOURCE/DRAIN FEATURE SEPARATION STRUCTURE 审中-公开

    公开(公告)号：US20230375785A1

    公开(公告)日：2023-11-23

    申请号：US18362121

    申请日：2023-07-31

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shih-Wei Lin

    IPC: G02B6/30 ,  G02B6/122

    CPC classification number: G02B6/305 ,  G02B6/1228

    Abstract: Structures and methods including a waveguide having a cladding layer surrounding a core layer disposed over a substrate, a cavity extending into the substrate adjacent the waveguide, a fiber disposed in the cavity, and an isolation space extending into the substrate and disposed under the waveguide. A plurality of holes may extend through the cladding layer adjacent the core layer.

    SEMICONDUCTOR DEVICE COMPRISING A PHOTODETECTOR WITH REDUCED DARK CURRENT
    3.
    发明申请
    SEMICONDUCTOR DEVICE COMPRISING A PHOTODETECTOR WITH REDUCED DARK CURRENT 有权

    公开(公告)号：US20210135024A1

    公开(公告)日：2021-05-06

    申请号：US16910566

    申请日：2020-06-24

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chen-Hao Chiang ,  Shih-Wei Lin ,  Eugene I-Chun Chen ,  Yi-Chen Chen

    IPC: H01L31/0232 ,  H01L31/028 ,  H01L31/18 ,  G02B6/12 ,  G02B6/124 ,  G02B6/136 ,  G02B6/13

    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a first doped region having a first doping type disposed in a semiconductor substrate. A second doped region having a second doping type different than the first doping type is disposed in the semiconductor substrate and laterally spaced from the first doped region. A waveguide structure is disposed in the semiconductor substrate and laterally between the first doped region and the second doped region. A photodetector is disposed at least partially in the semiconductor substrate and laterally between the first doped region and the second doped region. The waveguide structure is configured to guide one or more photons into the photodetector. The photodetector has an upper surface that continuously arcs between opposite sidewalls of the photodetector. The photodetector has a lower surface that continuously arcs between the opposite sidewalls of the photodetector.

    Cup-Like Getter Scheme
    4.
    发明申请
    Cup-Like Getter Scheme 有权
    杯状吸气剂计划

    公开(公告)号：US20150069539A1

    公开(公告)日：2015-03-12

    申请号：US14023572

    申请日：2013-09-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chih-Jen Chan ,  Lee-Chuan Tseng ,  Shih-Wei Lin ,  Che-Ming Chang ,  Chung-Yen Chou ,  Yuan-Chih Hsieh

    IPC: B81C1/00 ,  B81B7/00 ,  H01L21/322

    CPC classification number: B81C1/00285 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/015 ,  B81C2203/0118 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by increasing an area in which a getter layer is deposited, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having one or more residual gases. A cavity is formed within a top surface of the substrate. The cavity has a bottom surface and sidewalls extending from the bottom surface to the top surface. A getter layer, which absorbs the one or more residual gases, is deposited over the substrate at a position extending from the bottom surface of the cavity to a location on the sidewalls. By depositing the getter layer to extend to a location on the sidewalls of the cavity, the area of the substrate that is able to absorb the one or more residual gases is increased.

    Abstract translation: 本公开涉及一种通过增加其中沉积吸气剂层的区域和相关联的装置来提供高效吸气过程的吸气方法。 在一些实施例中，通过将衬底提供到具有一个或多个残余气体的处理室中来执行该方法。 在衬底的顶表面内形成空腔。 空腔具有底表面和从底表面延伸到顶表面的侧壁。 吸收一种或多种残余气体的吸气剂层在从腔的底表面延伸到侧壁上的位置的位置上沉积在衬底上。 通过沉积吸气剂层以延伸到腔的侧壁上的位置，能够吸收一种或多种残留气体的衬底的面积增加。

    WAFER CHUCK STRUCTURE WITH HOLES IN UPPER SURFACE TO IMPROVE TEMPERATURE UNIFORMITY
    6.
    发明申请
    WAFER CHUCK STRUCTURE WITH HOLES IN UPPER SURFACE TO IMPROVE TEMPERATURE UNIFORMITY 有权

    公开(公告)号：US20220344193A1

    公开(公告)日：2022-10-27

    申请号：US17241666

    申请日：2021-04-27

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ting-Jung Chen ,  Shih-Wei Lin ,  Lee-Chuan Tseng

    IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  C23C14/50 ,  C23C14/54 ,  C23C14/58 ,  C23C16/458 ,  C23C16/46

    Abstract: In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defined by a processing chamber, and a wafer chuck structure arranged within the processing chamber. The wafer chuck structure is configured to hold a wafer during a fabrication process. The wafer chuck includes a lower portion and an upper portion arranged over the lower portion. The lower portion includes trenches extending from a topmost surface towards a bottommost surface of the lower portion. The upper portion includes openings that are holes, extend completely through the upper portion, and directly overlie the trenches of the lower portion. Multiple of the openings directly overlie each trench. Further, cooling gas piping is coupled to the trenches of the lower portion of the wafer chuck structure, and a cooling gas source is coupled to the cooling gas piping.

    Heater structure with a gas-filled isolation structure to improve thermal efficiency in a modulator device
    10.
    发明授权
    Heater structure with a gas-filled isolation structure to improve thermal efficiency in a modulator device 有权

    公开(公告)号：US11226506B2

    公开(公告)日：2022-01-18

    申请号：US16821160

    申请日：2020-03-17

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Shih-Wei Lin ,  Ming Chyi Liu

    IPC: G02F1/015 ,  G02F1/025 ,  G02F1/225 ,  G02B6/12 ,  G02F1/21

    Abstract: In some embodiments, the present disclosure relates to a modulator device that includes an input terminal configured to receive impingent light. A first waveguide has a first output region and a first input region that is coupled to the input terminal. A second waveguide is optically coupled to the first waveguide and has second input region and a second output region that is coupled to the input terminal. An output terminal coupled to the first output region of the first waveguide and the second output region of the second waveguide is configured to provide outgoing light that is modulated. A heater structure is configured to provide heat to the first waveguide to induce a temperature difference between the first and second waveguides. A gas-filled isolation structure is proximate to the heater structure and is configured to thermally isolate the second waveguide from the heat provided to the first waveguide.

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