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公开(公告)号：US06265719B1
公开(公告)日：2001-07-24
申请号：US09182415
申请日：1998-10-30
IPC分类号： H01J37145
CPC分类号： H01J37/28 , H01J2237/1506 , H01J2237/2817
摘要： An inspection apparatus using an electron beam according to this invention has an electron beam irradiation unit (1-10) for irradiating a sample (11) with an electron beam (31), a projection optical unit (16-21) for forming a one- and/or two-dimensional image or images of secondary and reflected electrons (32) projected in accordance with changes in shape, material, and electrical potential of the sample surface, an electron beam detection unit (22-27) for outputting a detection signal on the basis of the one- and/or two-dimensional image or images, an image display unit (30) for displaying the one- and/or two-dimensional image or images of the sample surface upon receiving the detection signal, and an electron beam deflection unit (27, 43-44) for changing the incident angle of the electron beam coming from the electron beam irradiation unit onto the sample, and guiding the received secondary and reflected electrons to the mapping projection optical unit. With this apparatus, problems of the conventional apparatus (i.e., being unable to inspect defects present on the pattern side wall and difficulties in attaining optical axis adjustment due to the electron beam striking the sample surface at an oblique angle can be solved.
摘要翻译： 根据本发明的使用电子束的检查装置具有用于用电子束（31）照射样品（11）的电子束照射单元（1-10），用于形成一个电子束的投影光学单元（16-21） - 和/或根据样品表面的形状，材料和电位的变化投影的次级和反射电子（32）的二维图像或图像，用于输出检测的电子束检测单元（22-27） 基于一维和/或二维图像或图像的信号，用于在接收到检测信号时显示样本表面的一维和/或二维图像或图像的图像显示单元（30），以及 用于将来自电子束照射单元的电子束的入射角改变为样品的电子束偏转单元（27,43-44），并将接收到的次级和反射电子引导到映射投影光学单元。 利用这种装置，可以解决传统装置（即不能检测图案侧壁上存在的缺陷以及由于电子束以斜角撞击样品表面而导致的光轴调整困难）的问题。
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12.发明授权Substrate inspecting system using electron beam and substrate inspecting method using electron beam 有权使用电子束的基板检查系统和使用电子束的基板检查方法公开(公告)号：US06563114B1
公开(公告)日：2003-05-13
申请号：US09518096
申请日：2000-03-03
IPC分类号： H01J37145
CPC分类号： G01R31/307 , H01J37/28 , H01J2237/2594 , H01J2237/2817
摘要： A host computer controlling a secondary optical system under such an image focusing condition that secondary beams obtained from an arbitrary region on a substrate form an image on a MCP detector, in accordance with a correlation between a state of the substrate and an energy of the secondary electrons and the reflected electrons upon the secondary optical system, in which the energy of the secondary electron beams is various depending on the state of the substrate. The host computer also measures quantitatively a physical and/or chemical characteristic of the substrate on a basis of the image focusing condition and the image signals.
摘要翻译： 在这样的图像聚焦条件下控制二次光学系统的主计算机，其中从基板上的任意区域获得的次级光束在MCP检测器上形成图像，根据基板的状态和次级的能量之间的相关性 电子和二次光学系统上的反射电子，其中二次电子束的能量取决于衬底的状态而不同。 主计算机还基于图像聚焦条件和图像信号定量地测量基板的物理和/或化学特性。
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公开(公告)号：US06525328B1
公开(公告)日：2003-02-25
申请号：US09624355
申请日：2000-07-24
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： An electron beam lithography system 10 comprises an electron gun including a rectangular cathode 1 having an emission surface having an aspect ratio of other than 1, an illumination optical system 3 of an asymmetric lens system including multipole lenses Qa1 and Qa2, a CP aperture 5, and a projection optical system 8 of a symmetric lens system including multipole lenses Qb1 through Qb4. This electron beam lithography system 10 is used for emitting an electron beam at a low acceleration of 5 kV or less from the rectangular cathode 1, for controlling the illumination optical system so as to form an image of a desired character of the CP aperture 5 on an isotropic plane of incidence at different demagnifications in minor-axis and major-axis directions in accordance with the aspect ratio of the rectangular cathode 1, and for controlling the projection optical system 8 so that the electron beam leaving the CP aperture 5 as an aperture image is incident on a substrate 21 at the same demagnification in the minor-axis and major-axis directions and at different incident angles in the minor-axis and major-axis directions while passing through the trajectory without establishing any crossovers.
摘要翻译： 电子束光刻系统10包括电子枪，其包括具有不同于1的纵横比的发射表面的矩形阴极1，包括多极透镜Qa1和Qa2的非对称透镜系统的照明光学系统3，CP孔5， 以及包括多极透镜Qb1至Qb4的对称透镜系统的投影光学系统8。 该电子束光刻系统10用于从矩形阴极1以5kV以下的低加速度发射电子束，用于控制照明光学系统，以便形成CP孔5的所需字符的图像 根据矩形阴极1的纵横比在短轴和长轴方向上的不同缩小的各向同性平面，并且用于控制投影光学系统8，使得离开CP孔5的电子束作为孔 图像在短轴和长轴方向上以相同的缩小入射在基板21上，并且在短轴和长轴方向上以不同的入射角同时穿过轨迹而不建立任何交叉。
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公开(公告)号：US06495841B1
公开(公告)日：2002-12-17
申请号：US09299145
申请日：1999-04-26
申请人： Atsushi Ando , Shunko Magoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Motosuke Miyoshi , Katsuya Okumura , Kiyoshi Hattori
发明人： Atsushi Ando , Shunko Magoshi , Kazuyoshi Sugihara , Yuichiro Yamazaki , Motosuke Miyoshi , Katsuya Okumura , Kiyoshi Hattori
IPC分类号： H01J37317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/023 , H01J37/3174
摘要： In an electron beam drawing apparatus including an objective lens for focusing an electron beam emitted from an electron gun on a sample surface and an objective deflector for controlling the position of the electron beam on the sample surface, an objective driving mechanism for mechanically moving the objective lens and objective deflector in a plane perpendicular to the optical axis of the electron beam is provided and an optical axis shifting deflector arranged nearer to the electron gun than the objective lens and objective deflector, for deflecting the electron beam in synchronism with the operation of the objective lens and objective deflector is provided.
摘要翻译： 在包括用于将从电子枪发射的电子束聚焦在样品表面上的物镜和用于控制电子束在样品表面上的位置的物镜偏转器的电子束描绘装置中，用于机械地移动物镜的物镜驱动机构 提供了与电子束的光轴垂直的平面中的透镜和物镜偏转器，并且与物镜和物镜偏转器相比更靠近电子枪布置的光轴移动偏转器，用于与电子束的操作同步地偏转 提供物镜和物镜偏转器。
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公开(公告)号：US5576833A
公开(公告)日：1996-11-19
申请号：US402486
申请日：1995-03-10
IPC分类号： H01J37/22 , G01N23/225 , H01J37/04 , H01J37/06 , H01J37/09 , H01J37/12 , H01J37/244 , H01J37/28 , H01L21/66 , G01B11/00
CPC分类号： G01N23/2251 , H01J2237/2446
摘要： A scanning electron beam is formed as a rectangular electron beam. The electro-optical system which forms this rectangular beam has a rectangular-cathode light source and a quadrupole lens system. This rectangular beam is scanned in its short-axis (X-axis) direction by a deflection system while a stage is moved in its long-axis (Y-axis) direction to achieve scanning of the surface of the wafer under inspection. The rectangular beam corresponds to a number of circular beams arranged in a row. Therefore, pixel signals corresponding to a number of pixels equal to the aspect ratio of the rectangular beam (ratio of the length in the long-axis direction to the length in the short-axis direction) are simultaneously output.
摘要翻译： 扫描电子束形成为矩形电子束。 形成该矩形光束的电光系统具有矩形阴极光源和四极透镜系统。 这个矩形光束是通过偏转系统在其短轴（X轴）方向扫描的，同时一个台沿其长轴（Y轴）方向移动，以实现在检查晶片的表面的扫描。 矩形梁对应于排列成一排的多个圆形梁。 因此，同时输出与矩形光束的长宽比（长轴方向的长度与短轴方向的长度的比）相等的像素数的像素信号。
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公开(公告)号：US5293045A
公开(公告)日：1994-03-08
申请号：US988701
申请日：1992-12-10
CPC分类号： H01J37/12 , H01J37/026
摘要： An electrostatic lens having at least three electrodes and an insulating holder for holding the electrodes, the inner wall of the holder being coated with a silicone carbide film. The silicone carbide film may be formed by means of a vapor deposition method. The energy of an electron beam is set to 1.5 keV or lower. The silicone carbide film may be added with an additive for controlling the electric conductivity of the silicone carbide film. The additive may be nitrogen.
摘要翻译： 具有至少三个电极的静电透镜和用于保持电极的绝缘保持器，保持器的内壁涂覆有碳化硅膜。 可以通过气相沉积法形成碳化硅膜。 电子束的能量设定为1.5keV以下。 可以向该碳化硅膜添加用于控制碳化硅膜的导电性的添加剂。 添加剂可以是氮气。
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公开(公告)号：US5639308A
公开(公告)日：1997-06-17
申请号：US552673
申请日：1995-11-03
IPC分类号： C23F4/00 , C23F4/02 , H01J27/18 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/24 , C23C16/48 , C23F1/02 , H01J27/20 , H05H1/16
CPC分类号： H01J27/18 , H01J37/3233 , H01J37/32623 , H01J37/3266 , H05H1/24
摘要： A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma apparatus has a sample base for mounting the substance to be processed so that a processing surface of the substance is not directed in a direction perpendicular to a travel direction of the electron beams introduced into the processing chamber; a suppressing section for suppressing divergence of the electron beams introduced into the processing chamber; and a control section for controlling current density distribution of the divergence-suppressed electron beams so that current density distribution of ions contained in the plasma can be uniformalized on the substance to be processed.
摘要翻译： 等离子体装置通过将电子束引入填充有用于用引入的电子束照射反应性气体的反应气体的处理室来产生等离子体，以通过产生的等离子体处理物质。 等离子体装置具有用于安装待处理物质的样品基底，使得物质的处理表面不指向与引入处理室的电子束的行进方向垂直的方向; 用于抑制引入到处理室中的电子束的发散的抑制部分; 以及用于控制发散抑制电子束的电流密度分布的控制部分，使得包含在等离子体中的离子的电流密度分布能够对被处理物质均匀化。
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公开(公告)号：US5548183A
公开(公告)日：1996-08-20
申请号：US364747
申请日：1994-12-27
IPC分类号： H01J37/143 , H01J37/06 , H01J37/065 , H01J37/073 , H01J37/18 , H01J41/12 , H01J41/18 , H01J3/20
CPC分类号： H01J37/065 , H01J37/18 , H01J41/18
摘要： In a magnetic field immersion type electron gun for controlling an electron beam emitted by an electron gun (51) with the use of an electric lens (56) and a magnetic field lens formed by permanent magnets (57, 58) of a coaxial ion pump (53), the ion pump magnets are a pair of cylindrical permanent magnets (57, 58) disposed coaxially with an optical axis (52) of the electron gun (51) in such a way as to sandwich a cylindrical ion pump anode (61) of the coaxial ion pump; the two permanent magnets are magnetized in a mutually opposing direction; a hollow cylindrical yoke (60) is disposed also coaxially with the optical axis (52) in such a way as to enclose the two permanent magnets (57, 58) within a hollow portion thereof; and the yoke (60) is formed with an annular yoke gap (63) in a radially inner circumferential surface of the yoke (60) to leak out a magnetic flux flowing through the yoke toward the optical axis. In the above-mentioned construction, the magnetic field lens can be formed efficiently with the use of the magnetic field generated by the permanent magnets for constituting the coaxial ion pump, and further the formed magnetic field lens can be superimposed upon the electron gun. Therefore, an electric field immersion type electron gun of high performance can be obtained, and further the electron gun chamber can be efficiently evacuated in the vicinity of the cathode tip of the electron gun.
摘要翻译： 在使用电镜（56）和同轴离子泵的永磁体（57,58）形成的磁场透镜的电磁枪（51）发射的电子束的磁场浸渍型电子枪中， （53）中，离子泵磁体是与电子枪（51）的光轴（52）同轴配置的一对筒状的永久磁铁（57,58），夹着圆筒状离子泵阳极 ）的同轴离子泵; 两个永磁体在相互相反的方向被磁化; 中空圆柱形磁轭（60）还与光轴（52）同轴设置，以便将两个永磁体（57,58）包围在其中空部分内; 并且轭（60）在轭（60）的径向内周面上形成有环形磁轭间隙（63），以使流过磁轭的磁通向光轴泄漏。 在上述结构中，可以通过使用由用于构成同轴离子泵的永久磁铁产生的磁场来有效地形成磁场透镜，并且还可以将形成的磁场透镜叠加在电子枪上。 因此，可以获得高性能的电场浸没型电子枪，并且可以在电子枪的阴极尖端附近有效地排出电子枪室。
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公开(公告)号：US06815698B2
公开(公告)日：2004-11-09
申请号：US09920633
申请日：2001-08-03
IPC分类号： G21K510
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J37/147 , H01J37/153 , H01J2237/103 , H01J2237/1534 , H01J2237/1538
摘要： A charged particle beam exposure system comprising: a charged particle beam emitting device which generates charged particle beams with which a substrate is irradiated, the charged particle beam emitting device generating the charged particle beams at an accelerating voltage which is lower than that at which an influence of a proximity effect occurs; an illumination optical system which adjusts a beam diameter of the charged particle beams so that density of the charged particle beams is uniform; an character aperture in which an aperture hole is formed in a shape corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beams by an electrostatic field that the charged particle beams have a desired sectional shape and travel towards a desired aperture hole and which returns the charged particle beams passing through the aperture hole to an optical axis thereof; a reducing projecting optical system which forms a multi-pole lens field so that the charged particle beams passing through the character aperture substantially reduce at the same demagnification both in X and Y directions when the optical axis extends in Z directions and form an image on the substrate without forming any crossover between the character aperture and the substrate; and a second deflector which deflects the charged particle beams passing through the character aperture by means of an electrostatic field to scan the substrate with the charged particle beams.
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公开(公告)号：US06768112B2
公开(公告)日：2004-07-27
申请号：US10026727
申请日：2001-12-27
IPC分类号： G01N2300
CPC分类号： G01N22/04
摘要： A substrate inspection system includes: a charged particle beam irradiation part; an electron image detecting part; a mapping projecting part which projects the secondary and/or reflected charge particle generated from a substrate on the electron image detecting part; and a control part. The electron image detecting part includes a charged particle multiplying device which has an entrance surface for the secondary and/or reflected charged particle, and an image grabbing element having a fluorescent body with a light receiving surface to receive the multiplied secondary and/or reflected charged particle and a fluorescent surface on which an optical image appears. The control part causes the fluorescent surface of the fluorescent body to be grounded and applies a first negative potential to the entrance surface of the charged particle multiplying device.
摘要翻译： 基板检查系统包括：带电粒子束照射部分; 电子图像检测部; 映射突出部，其将从基板产生的次级和/或反射的电荷粒子投影在电子图像检测部上; 和控制部分。 电子图像检测部分包括具有用于次级和/或反射带电粒子的入射表面的带电粒子增益装置和具有带有光接收表面的荧光体的图像抓取元件，以接收倍增的和/或反射的带电粒子 颗粒和荧光表面，其上出现光学图像。 控制部使荧光体的荧光面接地，并向带电粒子增殖装置的入射面施加第一负电位。
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