Double stage charged particle beam energy width reduction system for charged particle beam system
    1.
    发明授权
    Double stage charged particle beam energy width reduction system for charged particle beam system 有权
    用于带电粒子束系统的双级带电粒子束能量减小系统

    公开(公告)号:US07679054B2

    公开(公告)日:2010-03-16

    申请号:US10571347

    申请日:2004-09-02

    IPC分类号: H01J49/00

    摘要: The present invention relates to e.g. a charged particle beam energy width reduction system for a charged particle beam with a z-axis along the optical axis and a first and a second plane, comprising, a first element acting in a focusing and dispersive manner, a second element acting in a focusing and dispersive manner, a first quadrupole element being positioned such that, in operation, a field of the first quadrupole element overlaps with a field of the first element acting in a focusing and dispersive manner, a second quadrupole element being positioned such that, in operation, a field of the second quadrupole element overlaps with a field of the second element acting in a focusing and dispersive manner, a first charged particle selection element being positioned, in beam direction, before the first element acting in a focusing and dispersive manner, and a second charged particle selection element being positioned, in beam direction, after the first element acting in a focusing and dispersive manner. Thereby, a virtually dispersive source-like location without an inherent dispersion limitation can be realized.

    摘要翻译: 本发明涉及例如 用于带有沿着光轴的z轴的带电粒子束的带电粒子束能量宽度减小系统以及包括以聚焦和分散方式起作用的第一元件的第一和第二平面, 第一四极元件被定位成使得在操作中,第一四极元件的场与以聚焦和分散方式作用的第一元件的场重叠,第二四极元件被定位成使得在操作中 第二四极元件的场与以聚焦和分散方式作用的第二元件的场重叠,第一带电粒子选择元件沿光束方向定位在第一元件以聚焦和分散方式作用之前,以及 第二带电粒子选择元件在光束方向上位于第一元件以聚焦和分散方式作用之后。 因此,可以实现没有固有分散限制的虚拟色散源状位置。

    CHARGED-PARTICLE BEAM LITHOGRAPHY APPARATUS AND DEVICE MANUFACTURING METHOD
    2.
    发明申请
    CHARGED-PARTICLE BEAM LITHOGRAPHY APPARATUS AND DEVICE MANUFACTURING METHOD 有权
    充电光束光刻设备和器件制造方法

    公开(公告)号:US20090057571A1

    公开(公告)日:2009-03-05

    申请号:US12184586

    申请日:2008-08-01

    申请人: Susumu Goto

    发明人: Susumu Goto

    IPC分类号: A61N5/00

    摘要: This invention discloses a charged-particle beam lithography apparatus which comprises a projection system which projects a charged-particle beam, and images a pattern on a substrate with the projected charged-particle beam. The projection system comprises a symmetrical magnetic doublet lens configured to generate a magnetic field, and an electro-static lens configured to generate an electric field superimposed on the magnetic field. The electro-static lens includes an electrode configured to apply, on at least the pupil plane of the symmetrical magnetic doublet lens, a potential to accelerate the charged-particle beam which has entered the symmetrical magnetic doublet lens.

    摘要翻译: 本发明公开了一种带电粒子束光刻设备,其包括投射带电粒子束的投影系统,并用投射的带电粒子束在基片上成像图案。 投影系统包括被配置为产生磁场的对称磁双透镜,以及被配置为产生叠加在磁场上的电场的静电透镜。 静电透镜包括配置成在至少对称磁性双透镜透镜的光瞳面上施加加速已经进入对称磁性双透镜的带电粒子束的电位的电极。

    Charged particle beam apparatus
    3.
    发明授权
    Charged particle beam apparatus 有权
    带电粒子束装置

    公开(公告)号:US08618480B2

    公开(公告)日:2013-12-31

    申请号:US13848854

    申请日:2013-03-22

    摘要: The present invention provides a charged particle beam apparatus which employs LVSEM to inspect sample surface with a throughput much higher than the prior art. The high throughput is realized by providing a probe current and a FOV both several times of those of the prior art. Accordingly several means are proposed to avoid obvious degradation of image resolution due to the increases in Coulomb effect and geometric aberrations, and increase efficiency and uniformity of secondary charged particle collection.

    摘要翻译: 本发明提供了一种带电粒子束装置,其使用LVSEM来检查样品表面,其生产量远高于现有技术。 通过提供几倍于现有技术的探针电流和FOV来实现高通量。 因此,提出了几种方法来避免由于库仑效应和几何像差的增加而引起的图像分辨率的明显降低,并且提高了二次带电粒子收集的效率和均匀性。

    ION IMPLANTATION WITH DIMINISHED SCANNING FIELD EFFECTS
    4.
    发明申请
    ION IMPLANTATION WITH DIMINISHED SCANNING FIELD EFFECTS 有权
    离子植入与微量扫描场效应

    公开(公告)号:US20100155623A1

    公开(公告)日:2010-06-24

    申请号:US12338644

    申请日:2008-12-18

    申请人: Edward C. Eisner

    发明人: Edward C. Eisner

    IPC分类号: H01J37/08 H01J49/00 H01J3/14

    摘要: Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece, or to improve the consistency of the ion implantation across the workpiece. Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.

    摘要翻译: 提供离子注入系统和扫描系统,其中,焦点调节部件被设置以调节离子束的聚焦特性,以减少在所述离子束扫描仪的零度磁场的影响。 焦特性可以以提高整个工件扫描的光束轮廓的一致性,或改善在工件的离子注入的一致性进行调整。 方法公开了用于提供一扫描离子束至工件,其包括扫描所述离子束以产生扫描的离子束,调整相对于离子束的焦点属性来在所述离子束的扫描仪的零种效果,和引导 离子束朝向工件。

    Projection electron microscope, electron microscope, specimen surface observing method and micro device producing method
    5.
    发明授权
    Projection electron microscope, electron microscope, specimen surface observing method and micro device producing method 有权
    投影电子显微镜,电子显微镜,样品表面观察法和微器件制造方法

    公开(公告)号:US07456401B2

    公开(公告)日:2008-11-25

    申请号:US10585995

    申请日:2005-01-13

    申请人: Erika Kanematsu

    发明人: Erika Kanematsu

    IPC分类号: H01J37/29

    摘要: The illuminating beam 4 emitted from the cathode 1 is incident on a deflector 3. In a state in which a voltage is applied to the deflector 3, the optical path of the illuminating beam 4 is altered by the deflector 3; the illuminating beam 4 then passes through a common electron optical system 7, and illuminates the surface of the sample 6. In cases where no voltage is applied to the deflector 3, the illuminating beam 4 passes directly through the deflector 3, and is absorbed by an electron absorbing plate 17. The illuminating beam 4 is attenuated when it passes through the common electron optical system 7, so that the energy of this beam 4 is close to 0 [eV] at the point in time at which the beam 4 reaches the surface of the sample 6. When the illuminating beam 4 is incident on the sample 6, reflected electrons 8 are generated from the sample 6. These reflected electrons 8 pass through the common electron optical system 7, and in a case where no voltage is applied to the deflector 3, these reflected electrons 8 pass through the image focusing electron optical system 9, so that the electrons are projected onto an MCP detector 10.

    摘要翻译: 从阴极1发射的照明光束4入射到偏转器3上。 在向偏转器3施加电压的状态下,照明光束4的光路被偏转器3改变, 照明光束4然后通过公共电子光学系统7,照射样品6的表面。 在没有电压施加到偏转器3的情况下,照射光束4直接通过偏转器3,并被电子吸收板17吸收。 照明光束4在通过公共电子光学系统7时被衰减,使得光束4的能量在光束4到达样品6的表面的时间点接近0 [eV]。 当照射光束4入射到样品6上时,从样品6产生反射电子8。 这些反射电子8通过公共电子光学系统7,并且在没有电压施加到偏转器3的情况下,这些反射电子8通过图像聚焦电子光学系统9,使得电子投影到MCP 检测器10。

    Substrate inspection method, method of manufacturing semiconductor device, and substrate inspection apparatus
    6.
    发明申请
    Substrate inspection method, method of manufacturing semiconductor device, and substrate inspection apparatus 有权
    基板检查方法,半导体装置的制造方法以及基板检查装置

    公开(公告)号:US20050263701A1

    公开(公告)日:2005-12-01

    申请号:US11137473

    申请日:2005-05-26

    摘要: A substrate inspection method includes: generating an electron beam and irradiating the electron beam as a primary electron beam to a substrate as a specimen; inducing at least any of a secondary electron, a reflected electron and a backscattering electron which are emitted from the substrate receiving the primary electron beam, and magnifying and projecting the induced electron as a secondary electron beam so as to form an image of the secondary electron beam; a trajectory of the primary electron beam and a trajectory of the secondary electron beam having an overlapping space and space charge effect of the secondary electron beam occurring in the overlapping space, detecting the image of the secondary electron beam to output a signal representing a state of the substrate; and suppressing aberration caused by the space charge effect in the overlapping space.

    摘要翻译: 基板检查方法包括:产生电子束并将作为一次电子束的电子束照射到作为检体的基板; 诱导从接收一次电子束的基板发射的二次电子,反射电子和后向散射电子中的任一种,并且将感应电子放大并投影为二次电子束,以形成二次电子的图像 光束; 一次电子束的轨迹和二次电子束的轨迹具有在重叠空间中发生的二次电子束的重叠空间和空间电荷效应,检测二次电子束的图像以输出表示二次电子束的状态的信号 基材; 并且抑制由重叠空间中的空间电荷效应引起的像差。

    Charged-particle beam lithography apparatus and device manufacturing method
    8.
    发明授权
    Charged-particle beam lithography apparatus and device manufacturing method 有权
    带电粒子光刻设备及器件制造方法

    公开(公告)号:US07960703B2

    公开(公告)日:2011-06-14

    申请号:US12184586

    申请日:2008-08-01

    申请人: Susumu Goto

    发明人: Susumu Goto

    IPC分类号: H01J37/12

    摘要: A charged-particle beam lithography apparatus includes a projection system that projects a charged-particle beam, and images a pattern on a substrate with the projected charged-particle beam. The projection system has a symmetrical magnetic doublet lens configured to generate a magnetic field, and an electro-static lens configured to generate an electrical field superimposed on the magnetic field. The electro-static lens includes an electrode configured to apply, on at least the pupil plane of the symmetrical magnetic doublet lens, a potential to accelerate a charged-particle beam that has entered the symmetrical magnetic double lens.

    摘要翻译: 带电粒子束光刻设备包括投射带电粒子束的投影系统,并且通过投影的带电粒子束将图案图像化在基板上。 投影系统具有被配置为产生磁场的对称磁双透镜,以及被配置为产生叠加在磁场上的电场的静电透镜。 静电透镜包括配置成在至少对称磁性双透镜透镜的光瞳面上施加加速已经进入对称磁性双透镜的带电粒子束的电位的电极。

    Monochromator and radiation source with monochromator
    9.
    发明授权
    Monochromator and radiation source with monochromator 有权
    单色仪和辐射源

    公开(公告)号:US07745783B2

    公开(公告)日:2010-06-29

    申请号:US12153455

    申请日:2008-05-20

    申请人: Stephan Uhlemann

    发明人: Stephan Uhlemann

    IPC分类号: G21K1/06 G21K5/02

    摘要: A monochromator (1) for a charged particle optics, in particular, for electron microscopy, comprises at least one first deflection element (2, 3) with an electrostatic deflecting field (2′, 3′) for generating a dispersion (4) in the plane (5) of a selection aperture (6) to select charged particles of a desired energy interval (7) and at least one second deflection element (8, 9) with an electrostatic deflecting field (8′, 9′) which eliminates the dispersion (4) of the at least one first deflecting field (2′, 3′). A radiation source (17) comprises such a monochromator (1). High monchromatism without intensity contrasts caused by defects of the slit aperture is thereby achieved in that the deflection elements (2, 3, 8, 9) have a design other than spherically shaped and their electrodes (24, 25) are given a potential (φ+, φ−) such that the charged particles (xα, yβ) which virtually enter the image of the radiation source (17) at different respective angles (α, β) in different sections (x, y), are differently focused such that charged particles (xα, yβ) of one energy are point focused (10, 10′, 10″) exclusively in the plane (5) of the selection aperture (6), since zero-crossings (11, 12) of the deflections (A) of the charged particles (xα, yβ) of the different sections (x, y) only coincide there at the same axial position (z, E).

    摘要翻译: 用于带电粒子光学器件的单色仪(1),特别是用于电子显微镜的装置包括至少一个具有用于产生分散体(4)的静电偏转场(2',3')的第一偏转元件(2,3) 选择孔径(6)的平面(5)以选择具有期望能量间隔(7)的带电粒子和至少一个具有静电偏转场(8',9')的第二偏转元件(8,9) 所述至少一个第一偏转场(2',3')的色散(4)。 辐射源(17)包括这样的单色仪(1)。 因此,由于偏转元件(2,3,8,9)具有除球形之外的设计,并且它们的电极(24,25)被赋予电位(&phgr),因此实现了由狭缝孔径的缺陷引起的没有强度对比度的高单色差 ; +,&phgr; - ),使得实际上在不同部分(x,y)中以不同的各个角度(α,&bgr))进入辐射源(17)的图像的带电粒子(xα,y和bgr) 不同的聚焦使得一个能量的带电粒子(xα,y和bgr)专门在选择孔径(6)的平面(5)中点聚焦(10,10',10“),因为过零点(11,12 不同部分(x,y)的带电粒子(xα,y&bgr)的偏转(A)的位移仅在相同的轴向位置(z,E)处重合。

    PROJECTION ELECTRONIC MICROSCOPE FOR REDUCING GEOMETRIC ABERRATION AND SPACE CHARGE EFFECT
    10.
    发明申请
    PROJECTION ELECTRONIC MICROSCOPE FOR REDUCING GEOMETRIC ABERRATION AND SPACE CHARGE EFFECT 有权
    投影电子显微镜,用于减少几何异常和空间充电效应

    公开(公告)号:US20080121820A1

    公开(公告)日:2008-05-29

    申请号:US11944503

    申请日:2007-11-23

    IPC分类号: H01J37/26 G02B21/00

    摘要: A projection electronic microscope is provided for improving geometric aberration and a space charge effect within a zooming range using a zoom type transfer lens system in a projection/image formation optical system. The projection electronic microscope comprises an irradiation system for emitting a primary electron beam irradiated to a sample, and a projection/image formation optical system for guiding a second electron beams emitted from the sample with the irradiation of the primary electron beam to a detection system. The projection/image formation optical system includes a zoom type transfer lens system having a first zoom lens and a second zoom lens. The first zoom lens includes a plurality of electrodes. A predetermined electrode of said plurality of electrodes is made thicker and is applied with a positive voltage to form a space having zero field strength and a high positive potential between said first zoom lens and said second zoom lens, and a cross-over by said first zoom lens is defined in said space within a zooming range.

    摘要翻译: 提供投影电子显微镜,用于在投影/图像形成光学系统中使用变焦型转印透镜系统来改善变焦范围内的几何像差和空间电荷效应。 投影电子显微镜包括用于发射照射到样品的一次电子束的照射系统,以及用于通过一次电子束的照射将从样品发射的第二电子束引导到检测系统的投影/图像形成光学系统。 投影/成像光学系统包括具有第一变焦透镜和第二变焦透镜的变焦型转印透镜系统。 第一变焦透镜包括多个电极。 所述多个电极中的预定电极被制成较厚的并且施加正电压以在所述第一变焦透镜和所述第二变焦透镜之间形成具有零场强和高正电位的空间,并且由所述第一 在变焦范围内在所述空间中定义变焦镜头。