摘要:
The present invention relates to e.g. a charged particle beam energy width reduction system for a charged particle beam with a z-axis along the optical axis and a first and a second plane, comprising, a first element acting in a focusing and dispersive manner, a second element acting in a focusing and dispersive manner, a first quadrupole element being positioned such that, in operation, a field of the first quadrupole element overlaps with a field of the first element acting in a focusing and dispersive manner, a second quadrupole element being positioned such that, in operation, a field of the second quadrupole element overlaps with a field of the second element acting in a focusing and dispersive manner, a first charged particle selection element being positioned, in beam direction, before the first element acting in a focusing and dispersive manner, and a second charged particle selection element being positioned, in beam direction, after the first element acting in a focusing and dispersive manner. Thereby, a virtually dispersive source-like location without an inherent dispersion limitation can be realized.
摘要:
This invention discloses a charged-particle beam lithography apparatus which comprises a projection system which projects a charged-particle beam, and images a pattern on a substrate with the projected charged-particle beam. The projection system comprises a symmetrical magnetic doublet lens configured to generate a magnetic field, and an electro-static lens configured to generate an electric field superimposed on the magnetic field. The electro-static lens includes an electrode configured to apply, on at least the pupil plane of the symmetrical magnetic doublet lens, a potential to accelerate the charged-particle beam which has entered the symmetrical magnetic doublet lens.
摘要:
The present invention provides a charged particle beam apparatus which employs LVSEM to inspect sample surface with a throughput much higher than the prior art. The high throughput is realized by providing a probe current and a FOV both several times of those of the prior art. Accordingly several means are proposed to avoid obvious degradation of image resolution due to the increases in Coulomb effect and geometric aberrations, and increase efficiency and uniformity of secondary charged particle collection.
摘要:
Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece, or to improve the consistency of the ion implantation across the workpiece. Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.
摘要:
The illuminating beam 4 emitted from the cathode 1 is incident on a deflector 3. In a state in which a voltage is applied to the deflector 3, the optical path of the illuminating beam 4 is altered by the deflector 3; the illuminating beam 4 then passes through a common electron optical system 7, and illuminates the surface of the sample 6. In cases where no voltage is applied to the deflector 3, the illuminating beam 4 passes directly through the deflector 3, and is absorbed by an electron absorbing plate 17. The illuminating beam 4 is attenuated when it passes through the common electron optical system 7, so that the energy of this beam 4 is close to 0 [eV] at the point in time at which the beam 4 reaches the surface of the sample 6. When the illuminating beam 4 is incident on the sample 6, reflected electrons 8 are generated from the sample 6. These reflected electrons 8 pass through the common electron optical system 7, and in a case where no voltage is applied to the deflector 3, these reflected electrons 8 pass through the image focusing electron optical system 9, so that the electrons are projected onto an MCP detector 10.
摘要:
A substrate inspection method includes: generating an electron beam and irradiating the electron beam as a primary electron beam to a substrate as a specimen; inducing at least any of a secondary electron, a reflected electron and a backscattering electron which are emitted from the substrate receiving the primary electron beam, and magnifying and projecting the induced electron as a secondary electron beam so as to form an image of the secondary electron beam; a trajectory of the primary electron beam and a trajectory of the secondary electron beam having an overlapping space and space charge effect of the secondary electron beam occurring in the overlapping space, detecting the image of the secondary electron beam to output a signal representing a state of the substrate; and suppressing aberration caused by the space charge effect in the overlapping space.
摘要:
An electron beam shaping unit for use in electron beam column and a method for designing thereof is presented. The electron beam shaping unit is configured for affecting electron beams of high density or strong electron-electron repulsion. These 5 beams can always be modeled with multi electron wave function. The electron beam shaping unit comprises a mask unit configured for affecting propagation of electrons therethrough to thereby form a propagating electron beam having, at far field, radial shape as determined by multi-electron non-linear function being an eigen function determined by a multi-electron Hartree-Fock Hamiltonian.
摘要:
A charged-particle beam lithography apparatus includes a projection system that projects a charged-particle beam, and images a pattern on a substrate with the projected charged-particle beam. The projection system has a symmetrical magnetic doublet lens configured to generate a magnetic field, and an electro-static lens configured to generate an electrical field superimposed on the magnetic field. The electro-static lens includes an electrode configured to apply, on at least the pupil plane of the symmetrical magnetic doublet lens, a potential to accelerate a charged-particle beam that has entered the symmetrical magnetic double lens.
摘要:
A monochromator (1) for a charged particle optics, in particular, for electron microscopy, comprises at least one first deflection element (2, 3) with an electrostatic deflecting field (2′, 3′) for generating a dispersion (4) in the plane (5) of a selection aperture (6) to select charged particles of a desired energy interval (7) and at least one second deflection element (8, 9) with an electrostatic deflecting field (8′, 9′) which eliminates the dispersion (4) of the at least one first deflecting field (2′, 3′). A radiation source (17) comprises such a monochromator (1). High monchromatism without intensity contrasts caused by defects of the slit aperture is thereby achieved in that the deflection elements (2, 3, 8, 9) have a design other than spherically shaped and their electrodes (24, 25) are given a potential (φ+, φ−) such that the charged particles (xα, yβ) which virtually enter the image of the radiation source (17) at different respective angles (α, β) in different sections (x, y), are differently focused such that charged particles (xα, yβ) of one energy are point focused (10, 10′, 10″) exclusively in the plane (5) of the selection aperture (6), since zero-crossings (11, 12) of the deflections (A) of the charged particles (xα, yβ) of the different sections (x, y) only coincide there at the same axial position (z, E).
摘要:
A projection electronic microscope is provided for improving geometric aberration and a space charge effect within a zooming range using a zoom type transfer lens system in a projection/image formation optical system. The projection electronic microscope comprises an irradiation system for emitting a primary electron beam irradiated to a sample, and a projection/image formation optical system for guiding a second electron beams emitted from the sample with the irradiation of the primary electron beam to a detection system. The projection/image formation optical system includes a zoom type transfer lens system having a first zoom lens and a second zoom lens. The first zoom lens includes a plurality of electrodes. A predetermined electrode of said plurality of electrodes is made thicker and is applied with a positive voltage to form a space having zero field strength and a high positive potential between said first zoom lens and said second zoom lens, and a cross-over by said first zoom lens is defined in said space within a zooming range.