Backup control means for shift lever of an automatic transmission systems
    13.
    发明授权
    Backup control means for shift lever of an automatic transmission systems 失效
    自动变速器系统的变速杆的备用控制装置

    公开(公告)号:US4944194A

    公开(公告)日:1990-07-31

    申请号:US318715

    申请日:1989-03-03

    摘要: A drive control apparatus of an automatic transmission device for use in automotive vehicles including a shift actuator and a select actuator comprising a pair of fluid pressure actuators capable of displacing a shift lever in right-angled two directions of a shift direction and a select direction, a piston rod and a detection rod capable of being displaced for an equal amount with respect to each other by a working fluid which is to be supplied and discharged to and from the actuators, a plurality of electromagnetic valves for supplying and discharging a working fluid to and from the actuators according to a control signal, a position switch for withdrawably engaging in a detection groove formed in an outer periphery of the detection rod and, when engaged, detaining the piston rod and detecting a control reference position of the actuators and outputting a detection signal thereof, a stroke sensor for continuously detecting displacement of the piston rod through the detection rod and an outputting a detection signal thereof, and a control unit for calculating the best position for each said actuators according to an input information regarding the driving state of the automotive vehicle and the operating state of an engine thereof and outputting a processed signal thereof to the electromagnetic valve in order to control the electromagnetic valve and also feedback controlling the activation of the electromagnetic valve according to the detection signals received from the position switch and from the stroke sensor, the activation of the actuators being normally controlled according to the input signal from the stroke sensor but, when the stroke sensor is out of order, being controlled according to the input signal coming from the position switch.

    摘要翻译: 一种用于机动车辆中的自动变速装置的驱动控制装置,包括一个换档致动器和一个选择致动器,该换档致动器和选择致动器包括一对能够沿变速方向和选择方向的直角两个方向移动变速杆的流体压力致动器, 活塞杆和检测杆,其能够通过要被供给和从执行器排出的工作流体相对于彼此移位相等量的多个电磁阀,用于将工作流体供给和排出到 并且根据控制信号从致动器中移除位置开关,用于抽出地接合在形成在检测棒的外周的检测槽中,并且当接合时,扣住活塞杆并检测致动器的控制基准位置并输出 检测信号,用于连续地检测活塞杆通过检测杆的位移的行程传感器 输出其检测信号,以及控制单元,用于根据关于机动车辆的驾驶状态的输入信息和其发动机的操作状态来计算每个所述致动器的最佳位置,并将其处理信号输出到电磁 阀,以便控制电磁阀,并且还根据从位置开关和行程传感器接收到的检测信号来反馈控制电磁阀的启动,致动器的启动通常根据来自行程的输入信号来控制 传感器,但是当行程传感器出故障时,根据来自位置开关的输入信号进行控制。

    Proportional control type remote-control direction switching control
valve device
    14.
    发明授权
    Proportional control type remote-control direction switching control valve device 失效
    比例控制型遥控方向切换控制阀装置

    公开(公告)号:US4281682A

    公开(公告)日:1981-08-04

    申请号:US164309

    申请日:1980-06-30

    申请人: Yuji Satoh

    发明人: Yuji Satoh

    IPC分类号: F15B13/043 F15B13/044

    摘要: A remotely operated, direction switching proportional control device comprises a direction switching control valve which includes a hydraulic actuator, an electromagnetic pressure reducing valve interposed between a liquid chamber of the hydraulic actuator and a hydraulic power source and an electromagnetic open or closed valve interposed between the liquid chamber and a liquid tank. Both the pressure-reducing valve and the open or closed valve can be operated against an electromagnetic force for return movement. The device eliminates the requirement for a piston stroke detector and may be operated by a single electromagnetic coil.

    摘要翻译: 遥控方向切换比例控制装置包括方向切换控制阀,该方向切换控制阀包括液压致动器,介于液压致动器的液体室与液压动力源之间的电磁减压阀以及介于该液压致动器之间的电磁打开或关闭阀 液体室和液体罐。 减压阀和打开或关闭的阀都可以抵抗用于返回运动的电磁力操作。 该装置消除了对活塞行程检测器的要求,并且可以由单个电磁线圈操作。

    REFERENCE CURRENT GENERATION CIRCUIT
    15.
    发明申请
    REFERENCE CURRENT GENERATION CIRCUIT 有权
    参考电流发生电路

    公开(公告)号:US20120056609A1

    公开(公告)日:2012-03-08

    申请号:US13044735

    申请日:2011-03-10

    申请人: Yuji Satoh

    发明人: Yuji Satoh

    IPC分类号: G05F3/26

    CPC分类号: G05F3/30

    摘要: One embodiment provides a reference current generation circuit. The circuit has first and second reference current generation circuits for generating first and second reference currents respectively, and a current output circuit for outputting a third reference current by adding the first and second reference currents. The first reference current generation circuit includes first and second current-voltage conversion circuits and a first current supply circuit. The first current supply circuit provides substantially equal amounts of current to the first and second current-voltage conversion circuits respectively. The second reference current generation circuit includes third to fifth current-voltage conversion circuits and a second current supply circuit. The second current supply circuit provides a current to the fourth current-voltage conversion circuit, divide and provide amounts of current substantially equal to that of the current provided to the fourth current-voltage conversion circuit, to the third and fifth current-voltage conversion circuits respectively.

    摘要翻译: 一个实施例提供了参考电流产生电路。 该电路具有用于分别产生第一和第二参考电流的第一和第二参考电流产生电路和用于通过添加第一和第二参考电流来输出第三参考电流的电流输出电路。 第一参考电流产生电路包括第一和第二电流 - 电压转换电路和第一电流供应电路。 第一电流供应电路分别向第一和第二电流 - 电压转换电路提供大致相等的电流。 第二参考电流产生电路包括第三至第五电流 - 电压转换电路和第二电流供应电路。 第二电流供应电路向第四电流 - 电压转换电路提供电流,将提供大小与提供给第四电流 - 电压转换电路的电流大致相等的电流量分配给第三和第五电流 - 电压转换电路 分别。

    OVERDISCHARGE PREVENTING CIRCUIT APPARATUS AND OVERDISCHARGE PREVENTING METHOD
    16.
    发明申请
    OVERDISCHARGE PREVENTING CIRCUIT APPARATUS AND OVERDISCHARGE PREVENTING METHOD 失效
    预防电路设备和超预防方法

    公开(公告)号:US20070231680A1

    公开(公告)日:2007-10-04

    申请号:US11761494

    申请日:2007-06-12

    IPC分类号: H01M6/00

    摘要: An overdischarge preventing circuit apparatus according to this invention is an overdischarge preventing circuit apparatus for a nonaqueous electrolyte secondary battery, including a discharge control mechanism which controls discharge of the nonaqueous electrolyte secondary battery when a surface temperature of the nonaqueous electrolyte secondary battery exceeds a discharge control temperature T1 (° C.) represented by T1=T0+QA  (1) where T0 is an ambient temperature (° C.), Q is 8 (° C./C), and A is a discharge rate (C).

    摘要翻译: 根据本发明的过放电防止电路装置是一种用于非水电解质二次电池的过放电防止电路装置,包括:当非水电解质二次电池的表面温度超过放电控制时控制非水电解质二次电池的放电的排放控制机构 由<?in-line-formula description =“In-line Formulas”end =“lead”?> T 1 T表示的温度T 1(℃)= T &lt;&lt;&gt; + QA(1)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中T 0 是环境温度 ℃),Q为8(℃/℃),A为放电率(C)。

    Overdischarge preventing circuit apparatus and overdischarge preventing method
    17.
    发明申请
    Overdischarge preventing circuit apparatus and overdischarge preventing method 有权
    过放电防止电路装置及过放电防止方法

    公开(公告)号:US20050237686A1

    公开(公告)日:2005-10-27

    申请号:US10650769

    申请日:2003-08-29

    摘要: An overdischarge preventing circuit apparatus according to this invention is an overdischarge preventing circuit apparatus for a nonaqueous electrolyte secondary battery, including a discharge control mechanism which controls discharge of the nonaqueous electrolyte secondary battery when a surface temperature of the nonaqueous electrolyte secondary battery exceeds a discharge control temperature T1 (° C.) represented by T1=T0+QA   (1) where T0 is an ambient temperature (° C.), Q is 8 (° C./C), and A is a discharge rate (C).

    摘要翻译: 根据本发明的过放电防止电路装置是一种用于非水电解质二次电池的过放电防止电路装置,包括:当非水电解质二次电池的表面温度超过放电控制时控制非水电解质二次电池的放电的排放控制机构 由<?in-line-formula description =“In-line Formulas”end =“lead”?> T 1 T表示的温度T 1(℃)= T &lt;&lt;&gt; + QA(1)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中T <0> 是环境温度 ℃),Q为8(℃/℃),A为放电率(C)。

    Polishing liquid supply apparatus
    18.
    发明授权
    Polishing liquid supply apparatus 失效
    抛光液供应装置

    公开(公告)号:US06257965B1

    公开(公告)日:2001-07-10

    申请号:US09471809

    申请日:1999-12-23

    IPC分类号: B24B719

    CPC分类号: B24B37/04 B24B57/02

    摘要: A polishing liquid supply apparatus for supplying a polishing liquid to a chemical mechanical polishing apparatus includes a polishing liquid supply system including a polishing liquid tank for storing the polishing liquid; and a polishing liquid supply path for supplying the polishing liquid from the polishing liquid tank to the chemical mechanical polishing apparatus. The polishing liquid supply system is structured so as to shield the polishing liquid therein from external air.

    摘要翻译: 一种用于向化学机械抛光装置供应抛光液的抛光液体供给装置包括:研磨液供给系统,包括:用于储存抛光液的抛光液罐; 以及用于将抛光液从抛光液罐供给到化学机械抛光装置的抛光液供给路径。 抛光液供给系统构成为将外部空气中的研磨液遮蔽。

    Process for planarizing buried oxide films in trenches by applying sequential diverse CMP treatments
    19.
    发明授权
    Process for planarizing buried oxide films in trenches by applying sequential diverse CMP treatments 失效
    通过应用连续不同的CMP处理来平坦化沟槽中的掩埋氧化膜的工艺

    公开(公告)号:US06245642B1

    公开(公告)日:2001-06-12

    申请号:US09501573

    申请日:2000-02-10

    申请人: Yuji Satoh

    发明人: Yuji Satoh

    IPC分类号: H01L2176

    CPC分类号: H01L21/76229

    摘要: The present invention provides a process for manufacturing a semiconductor structure comprising the steps of: (a) forming a first SiN film on a semiconductor substrate; (b) patterning the first SiN film, etching the resulting substrate using the first SiN film as a mask to form a plurality of first trenches and at least one second trench, so as to form a first islands group and at least one second island-like region; (c) depositing a SiO2 film to fill the first and second trenches with the SiO2 film; (d) forming a second SiN film over the resulting surface; (e) polishing the second SiN film and the SiO2 film by a CMP method using a first slurry until the surface of the first SiN film on the second island-like region is exposed; (f) polishing the second SiN film and the SiO2 film by a CMP method using a second slurry until the surface of the first SiN film on the first island-like region is exposed; (g) etching a predetermined amount of the SiO2 film; and (h) removing the second and first SiN films.

    摘要翻译: 本发明提供一种制造半导体结构的方法,包括以下步骤:(a)在半导体衬底上形成第一SiN膜; (b)对第一SiN膜进行构图,使用第一SiN膜作为掩模蚀刻所得到的衬底,以形成多个第一沟槽和至少一个第二沟槽,以形成第一岛群和至少一个第二岛 - 像区域; (c)沉积SiO 2膜以用SiO 2膜填充第一和第二沟槽; (d)在所得表面上形成第二SiN膜; (e)使用第一浆料通过CMP方法研磨第二SiN膜和SiO 2膜,直到第二岛状区域上的第一SiN膜的表面露出; (f)使用第二浆料通过CMP方法研磨第二SiN膜和SiO 2膜直到第一岛状区域上的第一SiN膜的表面露出; (g)蚀刻预定量的SiO 2膜; 和(h)去除第二和第一SiN膜。