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11.发明申请公开(公告)号：US20100264501A1
公开(公告)日：2010-10-21
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuta Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuta Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。
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公开(公告)号：US07733210B2
公开(公告)日：2010-06-08
申请号：US11378645
申请日：2006-03-20
申请人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Beysen Sadeh , Masakazu Taki
发明人： Taisuke Furukawa , Hiroshi Kobayashi , Takashi Takenaga , Takeharu Kuroiwa , Beysen Sadeh , Masakazu Taki
IPC分类号： H01L43/00
CPC分类号： G01R33/093 , B82Y25/00
摘要： A magnetic field detector includes: a magnet; a detecting magnetic resistance element having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a reference magnetic resistance element having substantially the same layer structure as that of the detecting magnetic resistance element. A magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in a direction which is sensed by the ferromagnetic layer of the reference magnetic resistance element.
摘要翻译： 磁场检测器包括：磁体; 具有包含铁磁层的层结构的检测磁阻元件，所述电阻在所述铁磁层的磁化方向改变时改变; 以及具有与检测用磁阻元件基本相同的层结构的基准磁阻元件。 其磁强度高于饱和磁场的磁场被磁铁施加在由参考磁阻元件的铁磁层感测的方向上。
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13.发明授权Magnetic field detector, and current detection device, position detection device and rotation detection devices using the magnetic field detector 有权磁场检测器，电流检测装置，位置检测装置和使用磁场检测器的旋转检测装置公开(公告)号：US07508203B2
公开(公告)日：2009-03-24
申请号：US12098291
申请日：2008-04-04
CPC分类号： G01R33/09 , B82Y25/00 , G01R15/205 , G01R33/093
摘要： A magnetic field detector having a reference magnetoresistive element and a magnetic field detecting magnetoresistive element. The reference magnetoresistive element and the magnetic field detecting magnetoresistive element each has a stack structure including an antiferromagnetic layer, a fixed layer of a ferromagnetic material with the direction of magnetization fixed by the antiferromagnetic layer, a nonmagnetic layer, and a free layer of a ferromagnetic material with the direction of magnetization adapted to be changed by an external magnetic field. The reference magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are parallel or antiparallel to each other, and the magnetic field detecting magnetoresistive element is such that the direction of magnetization of the fixed layer and the direction of magnetization of the free layer in the nonmagnetic field are different from each other. Thus, it is possible to provide a magnetic field detector capable of singly calibrating the sensitivity and the resolution of the detector whenever required.
摘要翻译： 具有参考磁阻元件和磁场检测磁阻元件的磁场检测器。 参考磁阻元件和磁场检测磁阻元件各自具有堆叠结构，其包括反铁磁层，铁磁材料的固定层，其具有由反铁磁层固定的磁化方向，非磁性层和铁磁性层的自由层 具有适于由外部磁场改变的磁化方向的材料。 参考磁阻元件使得固定层的磁化方向和非磁场中的自由层的磁化方向彼此平行或反平行，并且磁场检测磁阻元件使得磁化方向 和非磁场中的自由层的磁化方向彼此不同。 因此，可以提供能够在需要时单独地校准检测器的灵敏度和分辨率的磁场检测器。
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公开(公告)号：US5668041A
公开(公告)日：1997-09-16
申请号：US632194
申请日：1996-04-15
IPC分类号： H01L21/28 , H01L21/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L23/522 , H01L27/04 , H01L27/105 , H01L21/70 , H01L27/00
CPC分类号： H01L27/10852 , H01L21/3205 , H01L28/40 , H01L28/55 , Y10S257/915 , Y10S438/978
摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
摘要翻译： 根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从 层间绝缘膜的顶面角到掩埋导电层的表面。 因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。
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公开(公告)号：US5652186A
公开(公告)日：1997-07-29
申请号：US632195
申请日：1996-04-15
IPC分类号： H01L21/28 , H01L21/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L23/522 , H01L27/04 , H01L27/105 , H01L21/00
CPC分类号： H01L27/10852 , H01L21/3205 , H01L28/40 , H01L28/55 , Y10S257/915 , Y10S438/978
摘要： According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.
摘要翻译： 根据半导体器件及其制造方法，在由接触孔的侧壁限定的凹部和埋入导电层的接触孔的侧壁处形成侧壁间隔物，其中膜厚度从 层间绝缘膜的顶面角到掩埋导电层的表面。 因此，可以在形成DRAM的电容器的下电极层和上电极层之间实现良好的击穿电压和防漏电特性的半导体装置。
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16.发明授权公开(公告)号：US08546151B2
公开(公告)日：2013-10-01
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。
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公开(公告)号：US08518562B2
公开(公告)日：2013-08-27
申请号：US12617469
申请日：2009-11-12
CPC分类号： G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1659 , Y10T428/1143
摘要： A magnetic storage device stable in write characteristic is provided. A first nonmagnetic film is provided over a recording layer. A first ferromagnetic film is provided over the first nonmagnetic film and has a first magnetization and a first film thickness. A second nonmagnetic film is provided over the first ferromagnetic film. A second ferromagnetic film is provided over the second nonmagnetic film, is coupled in antiparallel with the first ferromagnetic film, and has a second magnetization and a second film thickness. An antiferromagnetic film is provided over the second ferromagnetic film. The sum of the product of the first magnetization and the first film thickness and the product of the second magnetization and the second film thickness is smaller than the product of the magnetization of the recording layer and the film thickness of the recording layer.
摘要翻译： 提供了一种写入特性稳定的磁存储装置。 在记录层上提供第一非磁性膜。 第一铁磁膜设置在第一非磁性膜上并具有第一磁化强度和第一膜厚度。 在第一铁磁膜上设置第二非磁性膜。 第二铁磁膜设置在第二非磁性膜上方，与第一铁磁膜反向并联，并具有第二磁化强度和第二膜厚度。 在第二铁磁膜上设置反铁磁性膜。 第一磁化强度与第一膜厚度的乘积和第二磁化强度与第二膜厚度的乘积的和小于记录层的磁化强度与记录层的膜厚度的乘积。
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18.发明授权公开(公告)号：US08258592B2
公开(公告)日：2012-09-04
申请号：US12463865
申请日：2009-05-11
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译： 提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。 下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。 隧道绝缘膜包含氧化铝（AlOx）作为构成材料。 在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。 硬掩模的膜厚大于CAP层的膜厚。
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公开(公告)号：US08036024B2
公开(公告)日：2011-10-11
申请号：US11442290
申请日：2006-05-30
IPC分类号： G11B5/39
CPC分类号： G11C11/15 , B82Y10/00 , H01L27/228 , H01L43/08 , Y10T428/1114 , Y10T428/1143
摘要： In a ferromagnetic tunnel junction element, a recording layer is in a circular shape, which can suppress an increase in magnetization switching field due to miniaturization of the element. Further, the recording layer includes a first ferromagnetic layer, a first non-magnetic layer, a second ferromagnetic layer, a second non-magnetic layer, and a third ferromagnetic layer successively stacked. The first and second ferromagnetic layers, and the second and third ferromagnetic layers are coupled antiparallel to each other, so that it is possible to control the magnetization distribution of the recording layer in an approximately single direction.
摘要翻译： 在铁磁隧道结元件中，记录层是圆形形状，这可以抑制由于元件的小型化引起的磁化开关场的增加。 此外，记录层包括依次堆叠的第一铁磁层，第一非磁性层，第二铁磁层，第二非磁性层和第三铁磁层。 第一和第二铁磁层以及第二和第三铁磁层彼此反平行地耦合，使得可以在大致单个方向上控制记录层的磁化分布。
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公开(公告)号：US08013407B2
公开(公告)日：2011-09-06
申请号：US12399760
申请日：2009-03-06
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.
摘要翻译： 提供了一种在写特性上稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。
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