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    Spinel ferrite thin film and method of manufacturing the same
    11.
    发明授权
    Spinel ferrite thin film and method of manufacturing the same 有权
    尖晶石型铁氧体薄膜及其制造方法

    公开(公告)号：US06488908B1

    公开(公告)日：2002-12-03

    申请号：US09652011

    申请日：2000-08-31

    申请人： Tomoji Kawai ,  Hitoshi Tabata ,  Yuji Muraoka

    发明人： Tomoji Kawai ,  Hitoshi Tabata ,  Yuji Muraoka

    IPC分类号： C01G4900

    CPC分类号： H01F41/205 ,  C23C14/08 ,  C30B23/002 ,  C30B23/02 ,  C30B29/26 ,  G11B7/00

    摘要： A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1×10−5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE1+tFe2−2tTMtO4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn1−xCoxFe2O4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.

    摘要翻译： 将基板和靶设置在真空室内，真空室内的氧分压设定为1×10 -5以下。 在这种条件下，选自由式AE1 + tFe2-2tTMtO4表示的化合物组成的组的尖晶石铁氧体薄膜，其中AE表示碱土金属或碱金属，TM表示过渡金属，t落在 在0.2和0.6之间，通过激光束沉积在衬底上沉积由式Zn1-xCoxFe2O4表示的化合物，其中x落在0.2和0.7之间的范围内。 具体的方法使得可以提供在大约或高于室温的温度下实现旋转玻璃态的尖晶石铁氧体薄膜，并且能够通过光控制自旋状态。

    Method of Patterning Self-Organizing Material, Patterned Substrate of Self-Organizing Material and Method of Producing the Same, and Photomask Using Patterned Substrate of Self-Organizing Material
    14.
    发明申请
    Method of Patterning Self-Organizing Material, Patterned Substrate of Self-Organizing Material and Method of Producing the Same, and Photomask Using Patterned Substrate of Self-Organizing Material 审中-公开
    自组织材料的图案化方法，自组织材料的图案化基材及其制造方法以及使用自组织材料的图案化基材的光掩模

    公开(公告)号：US20080050659A1

    公开(公告)日：2008-02-28

    申请号：US11663826

    申请日：2005-09-29

    申请人： Toshihito Ohtake ,  Ken-ichiro Nakamatsu ,  Shinji Matsui ,  Hitoshi Tabata ,  Tomoji Kawai

    发明人： Toshihito Ohtake ,  Ken-ichiro Nakamatsu ,  Shinji Matsui ,  Hitoshi Tabata ,  Tomoji Kawai

    IPC分类号： B29C49/00 ,  G03F1/00

    CPC分类号： G03F7/20 ,  B82Y10/00 ,  B82Y40/00 ,  G01N21/553 ,  G01N21/554 ,  G03F7/0002 ,  H01L51/0022 ,  H01L2251/105 ,  Y10T428/24802

    摘要： It is intended to provide a method of patterning a self-organizing material whereby a self-organizing material having a self-organization ability such as a nucleic acid can be aligned and immobilized in a desired manner on a substrate by using the imprint process, a patterned substrate of a self-organizing material and a method of producing the same, and a photomask. An immobilization layer containing a binder capable of binding to a self-organizing material is formed on a substrate. Then this immobilization layer is patterned by transferring an uneven pattern formed in a mold thereto by the imprint process. The self-organizing material is supplied onto the face having the uneven pattern of the immobilization layer transferred thereto. Thus, the self-organizing material is immobilized following the uneven pattern of the immobilization layer owing to the self-organization ability of the material per se and the binding ability of the binder contained in the immobilization layer.

    摘要翻译： 旨在提供一种图案化自组织材料的方法，由此具有自组织能力的自组织材料如核酸可以通过使用压印方法以所需的方式在基板上对准和固定， 自组织材料的图案化衬底及其制造方法，以及光掩模。 在基材上形成含有能够结合自组织材料的粘合剂的固定层。 然后通过压印工艺将形成在模具中的不均匀图案转印到该固定层上。 将自组织材料供给到转印有固定层的不均匀图案的面上。 因此，由于材料本身的自组织能力和固定化层中所含的粘合剂的结合能力，自组织材料被固定在固定层的不均匀图案之后。

    Pyroelectric IR sensor using an oxide superconductor upper electrode
    16.
    发明授权
    Pyroelectric IR sensor using an oxide superconductor upper electrode 失效
    使用氧化物超导体上电极的热释电红外传感器

    公开(公告)号：US5354732A

    公开(公告)日：1994-10-11

    申请号：US997187

    申请日：1992-12-28

    申请人： Hitoshi Tabata ,  Osamu Murata ,  Junzo Fujioka ,  Shunichi Minakata ,  Tomoji Kawai ,  Shichio Kawai

    发明人： Hitoshi Tabata ,  Osamu Murata ,  Junzo Fujioka ,  Shunichi Minakata ,  Tomoji Kawai ,  Shichio Kawai

    IPC分类号： G01J5/34 ,  H01L37/02 ,  H01L39/02 ,  H01L39/22 ,  H01L41/09 ,  G01J5/00 ,  H01L39/00

    CPC分类号： H01L37/02 ,  G01J5/34 ,  Y10S505/701

    摘要： An electrode in an electronic device using a functional thin film facilitates epitaxial growth during the functional material film-forming process and prevents the generation of cracks due to thermal stress. An oxide superconductor is using as an electrode material, thereby forming the crystal structure identical with the crystal structure of a functional thin film, and rendering their lattice constant and coefficient of thermal expansion close to the lattice constant and coefficient of thermal expansion functional thin film. According to the electrode material, high electric conductivity, low thermal conductivity and large thermal absorption coefficient characteristics can also be obtained.

    摘要翻译： 使用功能性薄膜的电子装置中的电极在功能性材料成膜过程中促进外延生长，并且防止由于热应力而产生裂纹。 使用氧化物超导体作为电极材料，由此形成与功能性薄膜的晶体结构相同的晶体结构，使其晶格常数和热膨胀系数接近晶格常数和热膨胀功能薄膜的系数。 根据电极材料，也可以获得高导电性，低导热性和大的热吸收系数特性。

    Fluctuation oscillator, fluctuation oscillating system, observation device and control system
    18.
    发明授权
    Fluctuation oscillator, fluctuation oscillating system, observation device and control system 有权
    波动振荡器，波动振荡系统，观测装置及控制系统

    公开(公告)号：US08089321B2

    公开(公告)日：2012-01-03

    申请号：US12673797

    申请日：2008-08-21

    申请人： Yasushi Hotta ,  Teruo Kanki ,  Naoki Asakawa ,  Toshio Kawahara ,  Tomoji Kawai ,  Hitoshi Tabata

    发明人： Yasushi Hotta ,  Teruo Kanki ,  Naoki Asakawa ,  Toshio Kawahara ,  Tomoji Kawai ,  Hitoshi Tabata

    IPC分类号： H03B29/00 ,  H03K3/03 ,  G06N3/04

    CPC分类号： G06G7/12 ,  H03K3/0315

    摘要： Four stochastic resonators 20-1 to 20-4 outputting a pulse signal in accordance with a stochastic resonance phenomenon are unidirectionally coupled in a ring-like form to constitute a fluctuation oscillator 10. When a signal output from each of the stochastic resonators 20-1 to 20-4 is successively transmitted in the stochastic resonators 20-1 to 20-4 coupled in a ring-like form, the output timings at each stochastic resonator 20 are synchronized with each other due to a cooperation phenomenon between the stochastic resonators 20-1 to 20-4, so that each stochastic resonator 20 is self-excited to oscillate at a constant period of time.

    摘要翻译： 根据随机共振现象输出脉冲信号的四个随机谐振器20-1至20-4以环形形式单向耦合以构成波动振荡器10.当从每个随机谐振器20-1输出的信号 在随机共振器20-1〜20-4中，以随机谐振器20-1〜20-4连续地以环状形式耦合，每个随机谐振器20的输出定时由于随机谐振器20〜 1〜20-4，使得每个随机谐振器20自激振荡在恒定的时间段。

    FLUCTUATION OSCILLATOR, FLUCTUATION OSCILLATING SYSTEM, OBSERVATION DEVICE AND CONTROL SYSTEM
    19.
    发明申请
    FLUCTUATION OSCILLATOR, FLUCTUATION OSCILLATING SYSTEM, OBSERVATION DEVICE AND CONTROL SYSTEM 有权
    波动振荡器，波动振荡系统，观测装置和控制系统

    公开(公告)号：US20110068875A1

    公开(公告)日：2011-03-24

    申请号：US12673797

    申请日：2008-08-21

    申请人： Yasushi Hotta ,  Teruo Kanki ,  Naoki Asakawa ,  Toshio Kawahara ,  Tomoji Kawai ,  Hitoshi Tabata

    发明人： Yasushi Hotta ,  Teruo Kanki ,  Naoki Asakawa ,  Toshio Kawahara ,  Tomoji Kawai ,  Hitoshi Tabata

    IPC分类号： H03K3/03

    CPC分类号： G06G7/12 ,  H03K3/0315

    摘要： Four stochastic resonators 20-1 to 20-4 outputting a pulse signal in accordance with a stochastic resonance phenomenon are unidirectionally coupled in a ring-like form to constitute a fluctuation oscillator 10. When a signal output from each of the stochastic resonators 20-1 to 20-4 is successively transmitted in the stochastic resonators 20-1 to 20-4 coupled in a ring-like form, the output timings at each stochastic resonator 20 are synchronized with each other due to a cooperation phenomenon between the stochastic resonators 20-1 to 20-4, so that each stochastic resonator 20 is self-excited to oscillate at a constant period of time.

    摘要翻译： 根据随机共振现象输出脉冲信号的四个随机谐振器20-1至20-4以环形形式单向耦合以构成波动振荡器10.当从每个随机谐振器20-1输出的信号 在随机共振器20-1〜20-4中，以随机谐振器20-1〜20-4连续地以环状形式耦合，每个随机谐振器20的输出定时由于随机谐振器20〜 1〜20-4，使得每个随机谐振器20自激振荡在恒定的时间段。

    Process for the production of dielectric thin films
    20.
    发明授权
    Process for the production of dielectric thin films 失效
    电介质薄膜生产工艺

    公开(公告)号：US5532504A

    公开(公告)日：1996-07-02

    申请号：US353293

    申请日：1994-12-05

    申请人： Hitoshi Tabata ,  Osamu Murata ,  Junzo Fujioka ,  Shunichi Minakata

    发明人： Hitoshi Tabata ,  Osamu Murata ,  Junzo Fujioka ,  Shunichi Minakata

    IPC分类号： C23C14/08 ,  C23C14/22 ,  C23C14/28 ,  G01J5/34 ,  H01L37/02 ,  H01L27/14

    CPC分类号： H01L37/02 ,  C23C14/088 ,  C23C14/22 ,  C23C14/28 ,  G01J5/34

    摘要： There is provided a process for producing a dielectric thin film of a compound oxide of a high-melting metal and a low-melting metal by vapor-depositing the compound oxide onto a substrate, wherein the improvement comprises irradiating a laser beam onto the substrate or to the vapor phase during vapor deposition.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.

    摘要翻译： 提供了一种通过将复合氧化物气相沉积到基底上来生产高熔点金属和低熔点金属的复合氧化物的电介质薄膜的方法，其中改进包括将激光束照射到基底上或 在气相沉积期间与气相反应。 还提供了一种热电型传感器，其包括：包括漏电极，源电极，栅电极和Si半导体的MOS元件和形成在漏电极上的铁电或热电材料的膜，漏电极被制成 的材料与Si或SiO 2呈现良好的欧姆接触，其晶格常数接近于铁电或热电材料。