利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.033 秒)

    Silicon carbide semiconductor device
    13.
    发明授权
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US09000448B2

    公开(公告)日：2015-04-07

    申请号：US13884956

    申请日：2011-03-29

    申请人： Hirotaka Hamamura ,  Yasuhiro Shimamoto ,  Hiroyuki Okino

    发明人： Hirotaka Hamamura ,  Yasuhiro Shimamoto ,  Hiroyuki Okino

    IPC分类号： H01L29/15 ,  H01L29/66 ,  H01L29/51 ,  H01L29/78 ,  H01L29/16

    CPC分类号： H01L29/66477 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/7802

    摘要： A MOSFET having a high mobility may be obtained by introducing nitrogen to the channel region or the interface between the gate dielectric film and the SiC substrate of the SiC MOSFET, but there is a problem that a normally-on MOSFET is obtained. For realizing both a high mobility and normally-off, and for providing a SiC MOSFET having further high reliability, nitrogen is introduced to the channel region of the SiC substrate or the interface between the gate dielectric film and the SiC substrate, and furthermore a metal oxide film having a thickness of 10%, or less of the total thickness of the gate dielectric film is inserted in the gate dielectric film.

    摘要翻译： 可以通过将氮引入SiC MOSFET的栅极电介质膜和SiC衬底之间的沟道区域或界面来获得具有高迁移率的MOSFET，但是存在通常导通的MOSFET的问题。 为了实现高迁移率和常态化，并且为了提供具有更高可靠性的SiC MOSFET，氮气被引入到SiC衬底的沟道区域或栅极电介质膜和SiC衬底之间的界面，此外，金属 厚度为栅极电介质膜的总厚度的10％以下的氧化膜被插入到栅极电介质膜中。

    Nonvolatile semiconductor storage device and manufacturing method thereof
    14.
    发明授权
    Nonvolatile semiconductor storage device and manufacturing method thereof 有权
    非易失性半导体存储装置及其制造方法

    公开(公告)号：US07863134B2

    公开(公告)日：2011-01-04

    申请号：US12695271

    申请日：2010-01-28

    申请人： Hirotaka Hamamura ,  Itaru Yanagi ,  Toshiyuki Mine

    发明人： Hirotaka Hamamura ,  Itaru Yanagi ,  Toshiyuki Mine

    IPC分类号： H01L21/336

    CPC分类号： H01L29/4234 ,  H01L21/28273 ,  H01L29/66825 ,  H01L29/792

    摘要： A charge holding insulating film in a memory cell is constituted by a laminated film composed of a bottom insulating film, a charge storage film, and a top insulating film on a semiconductor substrate. Further, by performing a plasma nitriding treatment to the bottom insulating film, a nitride region whose nitrogen concentration has a peak value and is 1 atom % or more is formed on the upper surface side in the bottom insulating film. The thickness of the nitride region is set to 0.5 nm or more and 1.5 nm or less, and the peak value of nitrogen concentration is set to 5 atom % or more and 40 atom % or less, and a position of the peak value of nitrogen concentration is set within 2 nm from the upper surface of the bottom insulating film, thereby suppressing an interaction between the bottom insulating film and the charge storage film.

    摘要翻译： 存储单元中的电荷保持绝缘膜由半导体衬底上的底部绝缘膜，电荷存储膜和顶部绝缘膜构成的层叠膜构成。 此外，通过对底部绝缘膜进行等离子体氮化处理，在底部绝缘膜的上表面侧形成氮浓度为1原子％以上的氮化物区域。 将氮化物区域的厚度设定为0.5nm以上至1.5nm以下，将氮浓度的峰值设定为5原子％以上且40原子％以下，将氮的峰值的位置 浓度从底部绝缘膜的上表面设定在2nm以内，从而抑制底部绝缘膜与电荷存储膜之间的相互作用。

    Method of manufacturing nonvolatile semiconductor memory device
    15.
    发明授权
    Method of manufacturing nonvolatile semiconductor memory device 有权
    制造非易失性半导体存储器件的方法

    公开(公告)号：US07682990B2

    公开(公告)日：2010-03-23

    申请号：US11144593

    申请日：2005-06-06

    申请人： Hirotaka Hamamura ,  Toshiyuki Mine ,  Natsuki Yokoyama

    发明人： Hirotaka Hamamura ,  Toshiyuki Mine ,  Natsuki Yokoyama

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/28282 ,  H01L29/42344 ,  H01L29/513 ,  H01L29/792

    摘要： Conventionally, a MONOS type nonvolatile memory is fabricated by subjecting a silicon nitride film to ISSG oxidation to form a top silicon oxide film of ONO structure. If the ISSG oxidation conditions are severe, repeats of programming/erase operation cause increase of interface state density (Dit) and electron trap density. This does not provide a sufficient value of the on current, posing a problem in that the deterioration of charge trapping properties cannot be suppressed.For the solution to the problem, the silicon nitride film is oxidized by means of a high concentration ozone gas to form the top silicon oxide film.

    摘要翻译： 通常，通过使氮化硅膜进行ISSG氧化来形成ONO结构的顶部氧化硅膜来制造MONOS型非易失性存储器。 如果ISSG氧化条件严重，编程/擦除操作的重复会导致界面态密度（Dit）和电子陷阱密度的增加。 这不能提供足够的导通电流值，这导致不能抑制电荷俘获特性的劣化的问题。 为了解决这个问题，氮化硅膜通过高浓度的臭氧气体被氧化，形成顶部氧化硅膜。

    Method of manufacturing nonvolatile semiconductor memory device
    16.
    发明申请
    Method of manufacturing nonvolatile semiconductor memory device 有权
    制造非易失性半导体存储器件的方法

    公开(公告)号：US20050272198A1

    公开(公告)日：2005-12-08

    申请号：US11144593

    申请日：2005-06-06

    申请人： Hirotaka Hamamura ,  Toshiyuki Mine ,  Natsuki Yokoyama

    发明人： Hirotaka Hamamura ,  Toshiyuki Mine ,  Natsuki Yokoyama

    IPC分类号： H01L27/10 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L21/28282 ,  H01L29/42344 ,  H01L29/513 ,  H01L29/792

    摘要： Conventionally, a MONOS type nonvolatile memory is fabricated by subjecting a silicon nitride film to ISSG oxidation to form a top silicon oxide film of ONO structure. If the ISSG oxidation conditions are severe, repeats of programming/erase operation cause increase of interface state density (Dit) and electron trap density. This does not provide a sufficient value of the on current, posing a problem in that the deterioration of charge trapping properties cannot be suppressed. For the solution to the problem, the silicon nitride film is oxidized by means of a high concentration ozone gas to form the top silicon oxide film.

    摘要翻译： 通常，通过使氮化硅膜进行ISSG氧化来形成ONO结构的顶部氧化硅膜来制造MONOS型非易失性存储器。 如果ISSG氧化条件严重，编程/擦除操作的重复会导致界面态密度（Dit）和电子陷阱密度的增加。 这不能提供足够的导通电流值，这导致不能抑制电荷俘获特性的劣化的问题。 为了解决这个问题，氮化硅膜通过高浓度的臭氧气体被氧化，形成顶部氧化硅膜。

    SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    19.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    硅碳化硅半导体器件及其制造方法

    公开(公告)号：US20120217513A1

    公开(公告)日：2012-08-30

    申请号：US13349430

    申请日：2012-01-12

    申请人： Naoki TEGA ,  Yasuhiro Shimamoto ,  Yuki Mori ,  Hirotaka Hamamura ,  Hiroyuki Okino ,  Digh Hisamoto

    发明人： Naoki TEGA ,  Yasuhiro Shimamoto ,  Yuki Mori ,  Hirotaka Hamamura ,  Hiroyuki Okino ,  Digh Hisamoto

    IPC分类号： H01L21/28 ,  H01L29/12

    CPC分类号： H01L29/7802 ,  H01L21/0475 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/7813

    摘要： A SiC MOSFET has a subject that resistance in the source region is increased when annealing for metal silicidation is performed to a source region before forming the gate insulating film, the metal silicide layer of the source region is oxidized by an oxidizing treatment (including oxynitriding treatment) when the gate insulating film is formed. When a metal silicide layer to be formed on the surface of a SiC epitaxial substrate is formed before forming a gate insulating film interface layer (oxide film), and an anti-oxidation film for the metal silicide is formed on the metal silicide layer, it is possible to suppress oxidation of the metal silicide layer by the oxidizing treatment upon forming the gate insulating film interface layer and the resistance of the source region can be decreased without lowering the channel mobility.

    摘要翻译： SiC MOSFET具有在形成栅极绝缘膜之前对源极区域进行金属硅化退火时源极区域的电阻增加的对象，源极区域的金属硅化物层通过氧化处理（包括氮氧化处理）被氧化 ）形成栅极绝缘膜。 当在形成栅极绝缘膜界面层（氧化物膜）之前形成在SiC外延基板的表面上形成的金属硅化物层时，在金属硅化物层上形成用于金属硅化物的抗氧化膜， 可以通过在形成栅极绝缘膜界面层时的氧化处理来抑制金属硅化物层的氧化，并且可以降低源极区域的电阻而不降低沟道迁移率。