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    Silicon carbide semiconductor device
    1.
    发明授权
    Silicon carbide semiconductor device 有权
    碳化硅半导体器件

    公开(公告)号：US09000448B2

    公开(公告)日：2015-04-07

    申请号：US13884956

    申请日：2011-03-29

    申请人： Hirotaka Hamamura ,  Yasuhiro Shimamoto ,  Hiroyuki Okino

    发明人： Hirotaka Hamamura ,  Yasuhiro Shimamoto ,  Hiroyuki Okino

    IPC分类号： H01L29/15 ,  H01L29/66 ,  H01L29/51 ,  H01L29/78 ,  H01L29/16

    CPC分类号： H01L29/66477 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/7802

    摘要： A MOSFET having a high mobility may be obtained by introducing nitrogen to the channel region or the interface between the gate dielectric film and the SiC substrate of the SiC MOSFET, but there is a problem that a normally-on MOSFET is obtained. For realizing both a high mobility and normally-off, and for providing a SiC MOSFET having further high reliability, nitrogen is introduced to the channel region of the SiC substrate or the interface between the gate dielectric film and the SiC substrate, and furthermore a metal oxide film having a thickness of 10%, or less of the total thickness of the gate dielectric film is inserted in the gate dielectric film.

    摘要翻译： 可以通过将氮引入SiC MOSFET的栅极电介质膜和SiC衬底之间的沟道区域或界面来获得具有高迁移率的MOSFET，但是存在通常导通的MOSFET的问题。 为了实现高迁移率和常态化，并且为了提供具有更高可靠性的SiC MOSFET，氮气被引入到SiC衬底的沟道区域或栅极电介质膜和SiC衬底之间的界面，此外，金属 厚度为栅极电介质膜的总厚度的10％以下的氧化膜被插入到栅极电介质膜中。

    SILICON CARBIDE SEMICONDUCTOR DEVICE
    2.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
    硅碳化硅半导体器件

    公开(公告)号：US20130234163A1

    公开(公告)日：2013-09-12

    申请号：US13884956

    申请日：2011-03-29

    申请人： Hirotaka Hamamura ,  Yasuhiro Shimamoto ,  Hiroyuki Okino

    发明人： Hirotaka Hamamura ,  Yasuhiro Shimamoto ,  Hiroyuki Okino

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66477 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/7802

    摘要： A MOSFET having a high mobility may be obtained by introducing nitrogen to the channel region or the interface between the gate dielectric film and the SiC substrate of the SiC MOSFET, but there is a problem that a normally-on MOSFET is obtained. For realizing both a high mobility and normally-off, and for providing a SiC MOSFET having further high reliability, nitrogen is introduced to the channel region of the SiC substrate or the interface between the gate dielectric film and the SiC substrate, and furthermore a metal oxide film having a thickness of 10%, or less of the total thickness of the gate dielectric film is inserted in the gate dielectric film.

    摘要翻译： 可以通过将氮引入SiC MOSFET的栅极电介质膜和SiC衬底之间的沟道区域或界面来获得具有高迁移率的MOSFET，但是存在通常导通的MOSFET的问题。 为了实现高迁移率和常态化，并且为了提供具有更高可靠性的SiC MOSFET，氮气被引入到SiC衬底的沟道区域或栅极电介质膜和SiC衬底之间的界面，此外，金属 厚度为栅极电介质膜的总厚度的10％以下的氧化膜被插入到栅极电介质膜中。

    SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    硅碳化硅半导体器件及其制造方法

    公开(公告)号：US20120217513A1

    公开(公告)日：2012-08-30

    申请号：US13349430

    申请日：2012-01-12

    申请人： Naoki TEGA ,  Yasuhiro Shimamoto ,  Yuki Mori ,  Hirotaka Hamamura ,  Hiroyuki Okino ,  Digh Hisamoto

    发明人： Naoki TEGA ,  Yasuhiro Shimamoto ,  Yuki Mori ,  Hirotaka Hamamura ,  Hiroyuki Okino ,  Digh Hisamoto

    IPC分类号： H01L21/28 ,  H01L29/12

    CPC分类号： H01L29/7802 ,  H01L21/0475 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/7813

    摘要： A SiC MOSFET has a subject that resistance in the source region is increased when annealing for metal silicidation is performed to a source region before forming the gate insulating film, the metal silicide layer of the source region is oxidized by an oxidizing treatment (including oxynitriding treatment) when the gate insulating film is formed. When a metal silicide layer to be formed on the surface of a SiC epitaxial substrate is formed before forming a gate insulating film interface layer (oxide film), and an anti-oxidation film for the metal silicide is formed on the metal silicide layer, it is possible to suppress oxidation of the metal silicide layer by the oxidizing treatment upon forming the gate insulating film interface layer and the resistance of the source region can be decreased without lowering the channel mobility.

    摘要翻译： SiC MOSFET具有在形成栅极绝缘膜之前对源极区域进行金属硅化退火时源极区域的电阻增加的对象，源极区域的金属硅化物层通过氧化处理（包括氮氧化处理）被氧化 ）形成栅极绝缘膜。 当在形成栅极绝缘膜界面层（氧化物膜）之前形成在SiC外延基板的表面上形成的金属硅化物层时，在金属硅化物层上形成用于金属硅化物的抗氧化膜， 可以通过在形成栅极绝缘膜界面层时的氧化处理来抑制金属硅化物层的氧化，并且可以降低源极区域的电阻而不降低沟道迁移率。