Abstract:
The present invention is to provide an output circuit, for a semiconductor circuit, capable of increasing the rise or fall time of an output signal without reducing the operating frequency of the output circuit, and thus effectively preventing occurrence of a malfunction due to an undesired change in the output signal caused by ringing, noise, or reflection occurring at the transition of the output signal. In the structure of present invention, an output circuit for a semiconductor circuit includes an input circuit, an output circuit including a transistor, and a control signal control circuit that lies between the input circuit and output circuit, outputs a control signal for use in driving the transistor in the output circuit, and changes the control signal according to a function of time.
Abstract:
A master-slice type semiconductor integrated circuit device includes a first transistor, and a second transistor. The first and second transistors are arranged side by side in a first direction. The first and second transistors respectively have first and second gate electrodes extending in a second direction perpendicular to the first direction. The first gate electrode has a first portion in which two gate contacts arranged in the first direction can be made. The second gate electrode has a second portion in which two gate contacts arranged in the first direction can be made.
Abstract:
A complementary logic circuit which has large power handling capacity, high switching speed and still has low power consumption is disclosed. The circuit is composed of a first stage comprising a complementary MIS-FET, and an output stage comprising complementary bipolar transistors or complementary vertical FETs. The output stage is provided with pull-up and pull-down elements, which pull up or pull down the amplitude of the output signal almost equal to that of the power supply voltages. Accordingly, the lack of sufficient amplitude in the conventional Bi-MIS circuit to drive the C-MIS circuit is improved, and it secures the stable operation of C-MIS logic circuits.
Abstract:
A method of manufacturing a master-slice integrated circuit device, implemented based on a total circuit diagram, including one or more logic blocks, each including a plurality of basic logic blocks such as flip-flops, NAND gates, and the like. The total circuit diagram is reformed by deleting unused basic logic blocks in each of the logic blocks whose output terminals are not used, by deleting unused wirings and other unused basic logic blocks whose output terminals are not connected to any basic logic blocks as a result of the deletion of the basic logic blocks, and by sequentially deleting unused basic logic blocks and unused wirings in the same manner, so as to retain only those basic logic blocks actually used as effective basic logic blocks. The circuit patterns of the master slice integrated circuit device are produced by using the total circuit diagram thus reformed.
Abstract:
A TTL circuit comprising an inverted signal output transistor (Tr.sub.4) and an off buffer circuit (Tr.sub.2, Tr.sub.3), alternately turned on and off in response to an input signal, to provide an inverted output. According to the invention, two driving circuits for driving the inverted signal output transistor and the off buffer circuit are separately provided. The threshold voltage of the circuit for driving the off buffer circuit is lower than the threshold voltage of the circuit for driving the inverted signal output transistor, whereby no transient current flows through the off buffer circuit and the inverted signal output transistor.
Abstract:
A reconfigurable operation apparatus consists of a plurality of operation units capable of reconfiguring themselves by using a piece of given first configuration data and of operating simultaneously with one another; RAMs; diverse processor elements required for constituting an operation apparatus; an inter-resource network interconnecting the operation units, the RAMs and the diverse processor elements, performing data transfers between resources connected thereto in a uniform transfer time independent of positions and kinds of the resources, and being reconfigurable by using a given second configuration data; and a configuration memory storing the first and the second configuration data. Configuration data is loaded from an external storage apparatus onto the configuration memory, and the first and the second configuration data are supplied to the reconfigurable processor resources in appropriate sequence and timing based on data available from a plurality of operation units.
Abstract:
A DES decrypting unit decrypts video data frames encrypted and compressed based on MPEG standards, when receiving them. The decrypted video data frames are expanded one by one in a MPEG expansion circuit. Each time the single frame is expanded, the MPEG expansion circuit outputs a completion-of-frame-expansion signal to a host control CPU. The host control CPU counts the completion-of-frame-expansion signals and reduces an accounting count value in an accounting data memory in accordance with this count value. The host control CPU output character pattern image data from a pattern generator when the accounting count value becomes 0. The character pattern image data is superimposed on a video signal in an adder circuit.
Abstract:
A semiconductor device includes a semiconductor chip, an I/O-cell circuit having a transistor-array part. The semiconductor device further includes a first group of bonding pads and a second group of bonding pads. The first group of bonding pads is connected with the I/O-cell circuit and is formed in a first pad-forming area arranged along an outer side of the transistor-array part in the I/O-cell circuit. And the second group of bonding pads is connected with the I/O-cell circuit and is formed in a second pad-forming area along an inner side of the transistor-array part in the I/O-cell circuit.
Abstract:
A semiconductor integrated circuit includes a substrate which has a predetermined width in a first direction and a predetermined length in a second direction which is approximately perpendicular to the first direction, a plurality of cells which are provided on the substrate and are grouped into a plurality of generally rectangular unit blocks, where each of the unit blocks are made up of cells having mutually different widths in the first direction but a common length in the second direction, first interconnections for supplying at least one power source voltage to the cells, where the first interconnections are provided independently for each unit block so as to supply the power source voltage in common to each of the cells making up the unit block, a row of first terminals of the cells, within each unit block, arranged in the first direction, a row of second terminals of the cells, within each unit block, arranged in the first direction an interconnection region at least including a region which is defined by the rows of the first and second terminals, and second interconnections which are provided within the interconnection region with respect to each unit block and connects the cells within the unit block.
Abstract:
A compound transistor type inverter, i.e., comprised of MIS and bipolar transistors, including, at the output stage thereof, an npn transistor operative to charge a load. The npn transistor can be quickly cut OFF by an additional transistor, and simultaneously, the additional transistor is operative to attain a quick discharge from the load. Still another additional transistor is employed, in a case where the inverter includes a pnp transistor, other than the npn transistor, at a ground side, which another additional transistor is operative to bypass the collector and emitter of the pnp transistor.