公开(公告)号：US20190237595A1

公开(公告)日：2019-08-01

申请号：US16378600

申请日：2019-04-09

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  Mijin Kim

IPC分类号： H01L31/0232 ,  H01L31/0304 ,  G01N21/552 ,  G01N21/00 ,  G02B6/12 ,  H01L31/105 ,  H01L31/109 ,  G02B6/124

摘要： Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs—GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

公开(公告)号：US20190237594A1

公开(公告)日：2019-08-01

申请号：US16378598

申请日：2019-04-09

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  Mijin Kim

IPC分类号： H01L31/0232 ,  H01L31/0304 ,  G01N21/552 ,  G01N21/00 ,  G02B6/12 ,  H01L31/105 ,  H01L31/109 ,  G02B6/124

摘要： Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs—GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

公开(公告)号：US20190148569A1

公开(公告)日：2019-05-16

申请号：US16167729

申请日：2018-10-23

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  Mijin Kim

IPC分类号： H01L31/0232 ,  H01L31/0304 ,  G01N21/552 ,  G01N21/00 ,  G02B6/12 ,  H01L31/105 ,  H01L31/109 ,  G02B6/124

摘要： Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs—GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

公开(公告)号：US20180212080A1

公开(公告)日：2018-07-26

申请号：US15924385

申请日：2018-03-19

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  Mijin Kim

IPC分类号： H01L31/0232 ,  H01L31/105 ,  H01L31/0304 ,  H01L31/109 ,  G02B6/124

CPC分类号： H01L31/02327 ,  G01N21/00 ,  G01N21/3504 ,  G01N21/552 ,  G01N21/7746 ,  G02B6/12004 ,  G02B6/124 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12123 ,  G02B2006/12138 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/109

摘要： Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs-GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

公开(公告)号：US11719634B2

公开(公告)日：2023-08-08

申请号：US17407274

申请日：2021-08-20

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  R. Joseph Weiblen ,  Mijin Kim

IPC分类号： G01N21/59 ,  H01S5/028 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34 ,  H01S5/343 ,  H01S5/042 ,  H01S5/20 ,  H01S5/02 ,  H01S5/026 ,  G02B6/10 ,  G01N21/27 ,  G01N21/25 ,  G01J3/18 ,  G01J3/28 ,  H01S5/22 ,  H01S5/06 ,  H01S5/062

CPC分类号： G01N21/59 ,  G01J3/1895 ,  G01J3/2803 ,  G01N21/255 ,  G01N21/27 ,  G02B6/102 ,  H01S5/0215 ,  H01S5/0262 ,  H01S5/0287 ,  H01S5/0421 ,  H01S5/101 ,  H01S5/125 ,  H01S5/2063 ,  H01S5/2206 ,  H01S5/3402 ,  H01S5/343 ,  G01N2201/0612 ,  H01S5/062 ,  H01S5/0612

摘要： Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

公开(公告)号：US11680901B2

公开(公告)日：2023-06-20

申请号：US17407223

申请日：2021-08-20

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  R. Joseph Weiblen ,  Mijin Kim

IPC分类号： G01N21/59 ,  H01S5/028 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34 ,  H01S5/343 ,  H01S5/042 ,  H01S5/20 ,  H01S5/02 ,  H01S5/026 ,  G02B6/10 ,  G01N21/27 ,  G01N21/25 ,  G01J3/18 ,  G01J3/28 ,  H01S5/22 ,  H01S5/06 ,  H01S5/062

CPC分类号： G01N21/59 ,  G01J3/1895 ,  G01J3/2803 ,  G01N21/255 ,  G01N21/27 ,  G02B6/102 ,  H01S5/0215 ,  H01S5/0262 ,  H01S5/0287 ,  H01S5/0421 ,  H01S5/101 ,  H01S5/125 ,  H01S5/2063 ,  H01S5/2206 ,  H01S5/3402 ,  H01S5/343 ,  G01N2201/0612 ,  H01S5/062 ,  H01S5/0612

摘要： Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

公开(公告)号：US11662310B2

公开(公告)日：2023-05-30

申请号：US17407216

申请日：2021-08-20

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  R. Joseph Weiblen ,  Mijin Kim

IPC分类号： G01N21/59 ,  H01S5/028 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34 ,  H01S5/343 ,  H01S5/042 ,  H01S5/20 ,  H01S5/02 ,  H01S5/026 ,  G02B6/10 ,  G01N21/27 ,  G01N21/25 ,  G01J3/18 ,  G01J3/28 ,  H01S5/22 ,  H01S5/06 ,  H01S5/062

CPC分类号： G01N21/59 ,  G01J3/1895 ,  G01J3/2803 ,  G01N21/255 ,  G01N21/27 ,  G02B6/102 ,  H01S5/0215 ,  H01S5/0262 ,  H01S5/0287 ,  H01S5/0421 ,  H01S5/101 ,  H01S5/125 ,  H01S5/2063 ,  H01S5/2206 ,  H01S5/3402 ,  H01S5/343 ,  G01N2201/0612 ,  H01S5/062 ,  H01S5/0612

摘要： Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

公开(公告)号：US20210396668A1

公开(公告)日：2021-12-23

申请号：US17407246

申请日：2021-08-20

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  R. Joseph Weiblen ,  Mijin Kim

IPC分类号： G01N21/59 ,  H01S5/028 ,  H01S5/10 ,  H01S5/125 ,  H01S5/34 ,  H01S5/343 ,  H01S5/042 ,  H01S5/20 ,  H01S5/02 ,  H01S5/026 ,  G02B6/10 ,  G01N21/27 ,  G01N21/25 ,  G01J3/18 ,  G01J3/28 ,  H01S5/22

摘要： Building blocks are provided for on-chip chemical sensors and other highly-compact photonic integrated circuits combining interband or quantum cascade lasers and detectors with passive waveguides and other components integrated on a III-V or silicon. A MWIR or LWIR laser source is evanescently coupled into a passive extended or resonant-cavity waveguide that provides evanescent coupling to a sample gas (or liquid) for spectroscopic chemical sensing. In the case of an ICL, the uppermost layer of this passive waveguide has a relatively high index of refraction that enables it to form the core of the waveguide, while the ambient air, consisting of the sample gas, functions as the top cladding layer. A fraction of the propagating light beam is absorbed by the sample gas if it contains a chemical species having a fingerprint absorption feature within the spectral linewidth of the laser emission.

公开(公告)号：US10453977B2

公开(公告)日：2019-10-22

申请号：US16378600

申请日：2019-04-09

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  Mijin Kim

IPC分类号： H01L31/0232 ,  H01L31/105 ,  H01L31/109 ,  G01N21/00 ,  H01L31/0304 ,  G02B6/124 ,  G02B6/12 ,  G01N21/552 ,  G01N21/3504 ,  G01N21/77

摘要： Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs—GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.

公开(公告)号：US20190237596A1

公开(公告)日：2019-08-01

申请号：US16378601

申请日：2019-04-09

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Jerry R. Meyer ,  Igor Vurgaftman ,  Chadwick Lawrence Canedy ,  William W. Bewley ,  Chul Soo Kim ,  Charles D. Merritt ,  Michael V. Warren ,  Mijin Kim

IPC分类号： H01L31/0232 ,  H01L31/0304 ,  G01N21/552 ,  G01N21/00 ,  G02B6/12 ,  H01L31/105 ,  H01L31/109 ,  G02B6/124

CPC分类号： H01L31/02327 ,  G01N21/00 ,  G01N21/3504 ,  G01N21/552 ,  G01N21/7746 ,  G02B6/12004 ,  G02B6/124 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12123 ,  G02B2006/12138 ,  H01L31/02325 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/105 ,  H01L31/109

摘要： Resonant-cavity infrared photodetector (RCID) devices that include a thin absorber layer contained entirely within the resonant cavity. In some embodiments, the absorber is a single type-II InAs—GaSb interface situated between an AlSb/InAs superlattice n-type region and a p-type AlSb/GaSb region. In other embodiments, the absorber region comprises quantum wells formed on an upper surface of the n-type region. In other embodiments, the absorber region comprises a “W”-structured quantum well situated between two barrier layers, the “W”-structured quantum well comprising a hole quantum well sandwiched between two electron quantum wells. In other embodiments, the RCID includes a thin absorber region and an nBn or pBp active core within a resonant cavity. In some embodiments, the RCID is configured to absorb incident light propagating in the direction of the epitaxial growth of the RCID structure, while in other embodiments, it absorbs light propagating in the epitaxial plane of the structure.