Device with ESD protection utilizing a shorting material between electrical pads or leads which are shorted then unshorted by severing the shorting material and then recreating the short by reapplying the shorting material
    14.
    发明授权
    Device with ESD protection utilizing a shorting material between electrical pads or leads which are shorted then unshorted by severing the shorting material and then recreating the short by reapplying the shorting material 失效
    具有ESD保护的装置,利用电焊盘或导线之间的短路材料,短路材料短路,然后通过切断短路材料,然后通过重新应用短路材料重建短路

    公开(公告)号:US07345853B2

    公开(公告)日:2008-03-18

    申请号:US11745787

    申请日:2007-05-08

    IPC分类号: G11B5/39

    摘要: A device according to one embodiment includes an electronic component such as an MR sensor, a pair of leads operatively coupled to the electronic component, and shorting material between the leads, the shorting material having been applied by a laser deposition process, the shorting material having been severed. A magnetic storage system according to another embodiment includes magnetic media; and at least one head for reading from and writing to the magnetic media, each head having: a sensor; and a writer coupled to the sensor. The system also includes a pair of pads or leads operatively coupled to the head; shorting material between the leads, the shorting material having been applied by a laser deposition process, the shorting material having been severed; a slider for supporting the head; and a control unit coupled to the head for controlling operation of the head.

    摘要翻译: 根据一个实施例的装置包括诸如MR传感器的电子部件,可操作地耦合到电子部件的一对引线以及引线之间的短路材料,通过激光沉积工艺施加了短路材料,所述短路材料具有 被切断 根据另一实施例的磁存储系统包括磁介质; 以及用于从磁介质读取和写入至少一个头部,每个头部具有:传感器; 以及耦合到传感器的写入器。 该系统还包括可操作地耦合到头部的一对垫或引线; 在引线之间短路材料,通过激光沉积工艺施加的短路材料,短路材料已被切断; 用于支撑头部的滑块; 以及耦合到头部用于控制头部的操作的控制单元。

    Method for seed layer removal for magnetic heads
    15.
    发明授权
    Method for seed layer removal for magnetic heads 失效
    磁头种子层去除方法

    公开(公告)号:US06927940B2

    公开(公告)日:2005-08-09

    申请号:US10633016

    申请日:2003-08-01

    摘要: The electroplated components of a magnetic head of the present invention are fabricated utilizing a seed layer that is susceptible to reactive ion etch removal techniques. A preferred seed layer is comprised of tungsten or titanium. Following the electroplating of the components utilizing a fluorine species reactive ion etch process the seed layer is removed, and significantly, the fluorine RIE process creates a gaseous tungsten or titanium fluoride compound removal product. The problem of seed layer redeposition along the sides of the electroplated components is overcome because the gaseous fluoride compound is not redeposited. The present invention also includes an enhanced two part seed layer, where the lower part is tungsten, titanium or tantalum and the upper part is composed of the material that constitutes the component to be electroplated.

    摘要翻译: 本发明的磁头的电镀部件利用易受反应离子蚀刻去除技术影响的晶种层来制造。 优选的种子层由钨或钛组成。 在利用氟物质反应离子蚀刻工艺对组分进行电镀之后,除去种子层,并且显着地,氟RIE工艺产生气态钨或氟化钛化合物去除产物。 由于气态氟化物不再沉积,克服了沿着电镀部件侧面的种子层再沉积的问题。 本发明还包括增强的两部分种子层,其中下部是钨,钛或钽,并且上部由构成待电镀部件的材料构成。

    Method of laser cutting a metal line on an MR head with a laser
    16.
    发明授权
    Method of laser cutting a metal line on an MR head with a laser 失效
    用激光切割MR头上的金属线的方法

    公开(公告)号:US06049056A

    公开(公告)日:2000-04-11

    申请号:US4693

    申请日:1998-01-08

    IPC分类号: B23K26/40 B23K26/08

    摘要: A thin film conductive line is formed between MR pads on an MR head for protecting an MR sensor from electrostatic discharge (ESD) during assembly steps between row level fabrication of the head and prior to merge of a head stack assembly with a disk stack assembly. The conductive line may have a reduced thickness delete pad. A laser beam having a fluence sufficient to sever the conductive line at the delete pad but insufficient to damage or cause debris from structure underlying or surrounding the conductive line is used to sever the conductive line. The method traverses minimum energy, short laser pulses at a high pulse rate across the line, the melted material withdrawing from the melted area and being heaped on top of adjacent portions of the delete pad by surface tension and the melted material cooling to room temperature before the next pulse so that there is no cumulative heating and therefore no damage to or debris from the underlying structure. The conductive material of the line is incrementally plowed to each side of a severed path by successive overlapping laser pulses so that when the series of laser pulses has traversed the width of the delete pad the conductive line has been severed.

    摘要翻译: 在MR头上的MR焊盘之间形成薄膜导电线,用于在磁头堆叠组件与磁盘堆叠组件合并之前的组装步骤期间保护MR传感器免受静电放电(ESD)的影响。 导线可以具有减小的厚度删除焊盘。 激光束具有足够的能量来切断在删除焊盘处的导线,但是不足以损坏或者导致来自导电线下面或周围的结构的碎屑被切断导线。 该方法穿过线路以高脉冲速度穿过最小能量,短激光脉冲,熔化的材料从熔化区域退出,并通过表面张力堆积在删除焊盘的相邻部分的顶部,并将熔融的材料冷却至室温 下一个脉冲,使得没有累积加热,因此没有来自底层结构的损坏或碎屑。 线的导电材料通过连续重叠的激光脉冲逐渐地被切割到切断路径的每一侧,使得当一系列激光脉冲已经穿过删除焊盘的宽度时,导线已被切断。

    Spin valve read head with plasma produced metal oxide insulation layer
between lead and shield layers and method of making
    17.
    发明授权
    Spin valve read head with plasma produced metal oxide insulation layer between lead and shield layers and method of making 失效
    旋转阀读头与等离子体产生金属氧化物绝缘层之间的铅和屏蔽层及其制作方法

    公开(公告)号:US5999379A

    公开(公告)日:1999-12-07

    申请号:US989105

    申请日:1997-12-11

    摘要: A method is provided for providing extra insulation between lead layers and first and second shield layers of a read head so as to prevent electrical shorting therebetween. A sensor layer is partially formed with a capping layer of a first oxidizable metallic layer. A lead layer is formed with a second oxidizable metallic capping layer thereon. A rear edge of the partially completed sensor is then formed followed by formation of an insulation layer which seals the rear edge. The wafer, upon which the components are constructed, is then subjected to an oxygen-based plasma which oxidizes the oxidizable layers with the second oxidizable metallic layers oxidizing at a faster rate than the first oxidizable metallic layer. The second oxidized layer then provides the desired extra insulation between the lead layers and the second shield layer. The read head produced by the method includes a sensor layer and first and second lead layers. A first metal oxide layer is on the sensor layer and a sensor layer and a second metal oxide layer is on each of the first and second lead layers. The sensor layer, the first and second lead layers and the first and second metal oxide layers are located between first and second gap layers and the first and second gap layers are located between first and second shield layers.

    摘要翻译: 提供了一种用于在引线层与读取头的第一和第二屏蔽层之间提供额外的绝缘的方法,以防止它们之间的电短路。 传感器层部分地形成有第一可氧化金属层的覆盖层。 在其上形成有第二可氧化金属覆盖层的引线层。 然后形成部分完成的传感器的后边缘,然后形成密封后边缘的绝缘层。 然后,将构成部件的晶片经受氧基等离子体,其氧化可氧化层,第二可氧化金属层以比第一可氧化金属层更快的速率氧化。 然后,第二氧化层在引线层和第二屏蔽层之间提供所需的额外绝缘。 通过该方法制造的读取头包括传感器层和第一和第二引线层。 第一金属氧化物层位于传感器层上,传感器层和第二金属氧化物层位于第一和第二引线层中的每一个上。 传感器层,第一和第二引线层以及第一和第二金属氧化物层位于第一和第二间隙层之间,并且第一和第二间隙层位于第一和第二屏蔽层之间。

    METHOD FOR MAKING A PATTERNED PERPENDICULAR MAGNETIC RECORDING DISK
    19.
    发明申请
    METHOD FOR MAKING A PATTERNED PERPENDICULAR MAGNETIC RECORDING DISK 审中-公开
    用于制作图案的全磁记录盘的方法

    公开(公告)号:US20100326819A1

    公开(公告)日:2010-12-30

    申请号:US12490480

    申请日:2009-06-24

    IPC分类号: B44C1/22

    摘要: A method for making a patterned-media magnetic recording disk uses nano-imprint lithography (NIL) for patterning a resist layer over the magnetic recording layer. A hard mask layer is located above the magnetic recording layer and an etch stop layer is located above the hard mask layer and below the resist layer. Residual resist material in the recesses of the patterned resist layer is removed by reactive ion etching (RIE) to expose the underlying etch stop layer. The etch stop material in the recesses is then removed by RIE to expose regions of the hard mask layer. A reactive ion milling (RIM) process removes the exposed hard mask material. The RIM process causes no undercutting of the unexposed hard mask material, which allows the very small critical dimensions of the patterned-media disk to be reliably achieved when ion milling is subsequently performed through the hard mask that has been patterned by the RIM process.

    摘要翻译: 用于制造图案介质磁记录盘的方法使用纳米压印光刻(NIL)来在磁记录层上图形化抗蚀剂层。 硬掩模层位于磁记录层上方,并且蚀刻停止层位于硬掩模层之上和抗蚀剂层下方。 通过反应离子蚀刻(RIE)去除图案化抗蚀剂层的凹陷中的残留抗蚀剂材料以暴露下面的蚀刻停止层。 然后通过RIE去除凹槽中的蚀刻停止材料以暴露硬掩模层的区域。 反应离子研磨(RIM)工艺去除了暴露的硬掩模材料。 RIM工艺不会导致未曝光的硬掩模材料的底切,这允许当通过已经通过RIM工艺图案化的硬掩模进行离子铣削时,可靠地实现图案化介质盘的非常小的临界尺寸。