摘要:
A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the substrate and the lower electrode, an upper electrode provided on the piezoelectric film, and an additional pattern, a cavity being formed between the lower electrode and the substrate in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the additional pattern being provided in a position that is on the lower electrode and includes an interface between the resonance portion and a non-resonance portion.
摘要:
A piezoelectric thin film resonator of the present has a substrate 1, an intermediate layer 7 disposed on the substrate 1 and is formed of an insulator, a lower electrode 3 disposed on the intermediate layer 7, a piezoelectric film 4 disposed on the lower electrode 3, and an upper electrode 5 disposed on a position facing the lower electrode 3 with the piezoelectric film 4 interposed therebetween, in which, in a resonant region 8 where the lower electrode 3 and the upper electrode 5 face each other, a space 6 is formed in the substrate 1 and the intermediate layer 7 or between the lower electrode 3 and the intermediate layer 7 and the region of the space 6 is included in the resonant region 8. With the structure, the dissipation of the vibrational energy to the substrate from the resonance portion can be suppressed, thereby improving the quality factor.
摘要:
A filter has a plurality of piezoelectric thin film resonators formed by sandwiching a piezoelectric film with a lower electrode disposed on a substrate and an upper electrode. Each of the piezoelectric thin film resonators has an electrode region formed with the upper electrode and the lower electrode overlapping each other, whose outline includes a curve. Among the plural piezoelectric thin film resonators, the piezoelectric thin film resonators in the opposing electrode regions of the adjacent piezoelectric thin film resonators are shaped to have outlines complementary to each other. With the filter, influences caused by transverse mode undesired wave of the piezoelectric thin film resonators can be suppressed. Therefore, miniaturization can be achieved without sacrificing the mechanical strength of electrodes having hollow structures.
摘要:
A piezoelectric thin-film resonator includes a substrate, a lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film so as to have a portion that overlaps the lower electrode across the piezoelectric film. At least a part of an outer end of the piezoelectric film is further in than an outer end of an opposing region in which the upper and lower electrodes overlap each other across the piezoelectric film.
摘要:
A piezoelectric thin-film resonator includes a lower electrode formed on a substrate to define a rounded dome-shaped cavity between the lower electrode and the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film. A membrane region is an overlapping region of the lower electrode and the upper electrode interposing the piezoelectric film and a projected area of the cavity onto the substrate includes the membrane region.
摘要:
A piezoelectric thin-film resonator includes a lower electrode provided on a substrate, a piezoelectric thin film provided on the lower electrode, and an upper electrode provided on the piezoelectric thin film. A membrane region is defined by a region where the upper electrode and the lower electrode overlap each other to sandwich the piezoelectric thin film therebetween and has an elliptical shape, and the lower electrode is also provided at an outer side of the membrane region in a region in which neither an extraction electrode of the upper electrode nor an extraction electrode of the lower electrode is provided.
摘要:
A method of manufacturing an elastic wave device is provided with a lamination step of forming, on a substrate (1), a plurality of elastic wave devices, each of which includes a lower electrode (2), a piezoelectric film (3), and an upper electrode (4); a measuring step for measuring the operation frequency distribution of the elastic wave devices on the substrate (1); and an adjusting step for forming an adjusting region, in which the thickness of the elastic wave device is different from the thicknesses of other portions in a resonance portion of each elastic wave device, corresponding with the distribution of the operation frequencies. The adjusting region is formed so that the size of the area of the adjusting region of the resonator portion of each elastic wave device is different in accordance with the operation frequency distribution that is measured. Thus, the frequency characteristics of the elastic wave devices are easily adjusted by a small number of steps.
摘要:
An acoustic wave device includes a substrate and a plurality of piezoelectric thin film resonators formed over the substrate. Each of the plurality of the piezoelectric thin film resonators includes lower electrode provided on the substrate, a piezoelectric film provided on the lower electrode, and an upper electrode provided on the piezoelectric film and opposed to the lower electrode through the piezoelectric film. Each of the piezoelectric thin film resonators is partly supported by the substrate and extends above the substrate to form a cavity between the substrate and each lower electrodes. The cavity continuously extending under the plurality of the piezoelectric thin film resonators.
摘要:
A filter element includes a plurality of multilayer filters that are connected in cascade, each of the plurality of multilayer filters including a plurality of piezoelectric thin-film resonators stacked vertically, each of the piezoelectric thin-film resonators including a piezoelectric film and a pair of first electrodes between which the piezoelectric film is interposed, and a capacitor connected between an input terminal of one of the plurality of multilayer filters of a preceding stage and an input terminal of another one of the plurality of multilayer filters of a following stage, exciting directions of piezoelectric thin-film resonators to which the input terminals of the multilayer filters of the preceding and following stages are connected being opposite to each other.
摘要:
A filter has a plurality of piezoelectric thin film resonators formed by sandwiching a piezoelectric film with a lower electrode disposed on a substrate and an upper electrode. Each of the piezoelectric thin film resonators has an electrode region formed with the upper electrode and the lower electrode overlapping each other, whose outline includes a curve. Among the plural piezoelectric thin film resonators, the piezoelectric thin film resonators in the opposing electrode regions of the adjacent piezoelectric thin film resonators are shaped to have outlines complementary to each other. With the filter, influences caused by transverse mode undesired wave of the piezoelectric thin film resonators can be suppressed. Therefore, miniaturization can be achieved without sacrificing the mechanical strength of electrodes having hollow structures.