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    Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)
    12.
    发明授权
    Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD) 有权

    公开(公告)号：US12290835B2

    公开(公告)日：2025-05-06

    申请号：US17867010

    申请日：2022-07-18

    Applicant: Tokyo Electron Limited

    Inventor： Omid Zandi ,  Jacques Faguet ,  Ornella Sathoud

    IPC: H01L21/02 ,  B05D1/00

    Abstract: The present disclosure provides embodiments of processes and methods for stabilizing self-assembled monolayers (SAMs). In the present disclosure, a cyclic vapor deposition process is used to selectively deposit a polymer thin film on a SAM structure formed on a target material. The polymer thin film selectively deposited on the SAM structure stabilizes the SAM structure by: (a) healing defects in the SAM structure and providing blanket coverage over the target material surface, (b) preventing migration of SAM-forming molecules to neighboring non-target surfaces, and (c) increasing the thickness and rigidity of the SAM structure. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the SAM structure.

    Systems for etching a substrate using a hybrid wet atomic layer etching process
    14.
    发明授权
    Systems for etching a substrate using a hybrid wet atomic layer etching process 有权

    公开(公告)号：US12243752B2

    公开(公告)日：2025-03-04

    申请号：US17584667

    申请日：2022-01-26

    Applicant: Tokyo Electron Limited

    Inventor： Paul Abel ,  Jacques Faguet

    IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

    Abstract: The present disclosure provides a system for etching an exposed material on a substrate disposed within a process chamber using a hybrid atomic layer etching (ALE) process that combines a gas-phase surface modification step with a liquid-phase dissolution step within the same process chamber. In the hybrid ALE process disclosed herein, a gas-phase reactant is used to modify an exposed surface of the material to create a modified surface layer, and one or more liquid-phase reactants are used to selectively dissolve the modified surface layer without dissolving the material underlying the modified surface layer. Once the modified surface layer is selectively dissolved, the substrate may be dried and the gas-phase surface modification and liquid-phase dissolution steps may be repeated for one or more ALE cycles until a desired amount of the material is etched.

    Processing systems and platforms for roughness reduction of materials using illuminated etch solutions
    15.
    发明授权
    Processing systems and platforms for roughness reduction of materials using illuminated etch solutions 有权

    公开(公告)号：US12112959B2

    公开(公告)日：2024-10-08

    申请号：US16402634

    申请日：2019-05-03

    Applicant: Tokyo Electron Limited

    Inventor： Omid Zandi ,  Jacques Faguet

    IPC: H01L21/67 ,  H01L21/3213

    CPC classification number: H01L21/6708 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/67069

    Abstract: Processing system and platform embodiments are described that illuminate etch solutions to provide controlled etching of materials. The processing systems and platforms deposit a liquid etch solution over a material to be etched and illuminate the liquid etch solution to adjust levels of reactants. The liquid etch solution has a first level of reactants, and the illumination causes the liquid etch solution to have a second level of reactants that is different than the first level. The material is modified with the illuminated etch solution, and the modified material is removed. The delivery, exposing, and removing can be repeated to provide a cyclic etch. Further, oxidation and dissolution can occur simultaneously or can occur in multiple steps. The material being etched can be a polycrystalline material, a polycrystalline metal, and/or other material. One liquid etch solution can include hydrogen peroxide that is illuminated to form hydroxyl radicals.

    Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD)
    18.
    发明授权
    Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD) 有权

    公开(公告)号：US11691175B1

    公开(公告)日：2023-07-04

    申请号：US17866897

    申请日：2022-07-18

    Applicant: Tokyo Electron Limited

    Inventor： Omid Zandi ,  Jacques Faguet ,  Ornella Sathoud

    IPC: B32B38/04 ,  B05D1/00 ,  B05D5/12

    CPC classification number: B05D1/60 ,  B05D5/12 ,  B05D2202/00

    Abstract: The present disclosure provides embodiments of improved area-selective deposition (ASD) processes and methods for selectively depositing polymer films on a variety of different target material. More specifically, the present disclosure provides improved ASD processes and related methods that use a cyclic vapor deposition process, which sequentially exposes a surface of a substrate to a polymer precursor followed by an initiator to selectively deposit a polymer thin film on a target material exposed on the substrate surface. The process of sequentially exposing the substrate surface to the precursor and the initiator can be repeated for one or more cycles of the cyclic vapor deposition process until a predetermined thickness of the polymer thin film is selectively deposited on the target material. In one embodiment, sequentially pulsed initiated chemical vapor deposition (spiCVD) is used to selectively deposit the polymer thin film on the target material.

    Methods For Wet Atomic Layer Etching Of Copper
    19.
    发明公开
    Methods For Wet Atomic Layer Etching Of Copper 审中-公开

    公开(公告)号：US20230140900A1

    公开(公告)日：2023-05-11

    申请号：US17725072

    申请日：2022-04-20

    Applicant: Tokyo Electron Limited

    Inventor： Christopher Netzband ,  Paul Abel ,  Jacques Faguet ,  Arkalgud Sitaram

    IPC: C23F1/18

    CPC classification number: C23F1/18

    Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

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