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11.发明授权公开(公告)号：US10328546B2
公开(公告)日：2019-06-25
申请号：US15499402
申请日：2017-04-27
Applicant: TOKYO ELECTRON LIMITED
Inventor： Akihiro Kubo , Masahiro Fukuda , Taro Yamamoto , Kenji Yada , Masashi Enomoto , Noboru Nakashima
IPC: B24D7/18 , B24B25/00 , B24B27/00 , B24B37/34 , B24B47/16 , B24B49/16 , H01L21/02 , H01L21/67 , B24B37/005 , H01L21/306
Abstract: There is disclosed a polishing cleaning mechanism configured to be in contact with a rear surface of a substrate which is held in a substrate holding unit for holding the rear surface of the substrate and perform a polishing process and a cleaning process on the rear surface of the substrate, including a cleaning member configured to clean the rear surface of the substrate, a polishing member configured to polish the rear surface of the substrate, and a support member configured to support the polishing member and the cleaning member to face the rear surface of the substrate held in the substrate holding unit, wherein a surface of the polishing member facing the substrate and a surface of the cleaning member facing the substrate differ in relative height from each other.
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12.发明授权公开(公告)号：US10203605B2
公开(公告)日：2019-02-12
申请号：US15444671
申请日：2017-02-28
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
Abstract: A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.
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13.发明授权公开(公告)号：US10185220B2
公开(公告)日：2019-01-22
申请号：US15262489
申请日：2016-09-12
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
Abstract: A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.
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公开(公告)号：US20180157178A1
公开(公告)日：2018-06-07
申请号：US15823847
申请日：2017-11-28
Applicant: Tokyo Electron Limited
Inventor： Yusaku Hashimoto , Takeshi Shimoaoki , Masahiro Fukuda , Kouichirou Tanaka
CPC classification number: G03F7/3021 , G03F7/162
Abstract: A controller performs a control to contact, after forming a liquid puddle of a rinse liquid on a surface of a wafer, a liquid contact surface of a nozzle of a developing liquid supply unit with the liquid puddle and to form a liquid puddle of a diluted developing liquid by discharging a developing liquid from the nozzle; a control to rotate the wafer at a first rotation speed which allows the diluted developing liquid inside an edge of the liquid contact surface to stay between the liquid contact surface and the surface and allows the diluted developing liquid outside the edge of the liquid contact surface to be diffused toward an edge of the wafer; and a control to move the nozzle toward the edge of the wafer while rotating the wafer at a second rotation speed smaller than the first rotation speed and discharging the developing liquid.
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公开(公告)号：US09568829B2
公开(公告)日：2017-02-14
申请号：US14449419
申请日：2014-08-01
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kousuke Yoshihara , Hideharu Kyouda , Koshi Muta , Taro Yamamoto , Yasushi Takiguchi , Masahiro Fukuda
CPC classification number: G03F7/3021 , B05C5/02 , B05C5/027 , B05C11/08 , B05D1/005 , B05D1/26 , G03F7/30 , H01L21/6715
Abstract: A developing method includes: horizontally holding an exposed substrate by a substrate holder; forming a liquid puddle on a part of the substrate, by supplying a developer from a developer nozzle; rotating the substrate; spreading the liquid puddle on a whole surface of the substrate, by moving the developer nozzle such that a supply position of the developer on the rotating substrate is moved in a radial direction of the substrate; bringing, simultaneously with the spreading of the liquid puddle on the whole surface of the substrate, a contact part into contact with the liquid puddle, the contact part being configured to be moved together with the developer nozzle and having a surface opposed to the substrate which is smaller than the surface of the substrate. According to this method, an amount of liquid falling down to the outside of the substrate can be inhibited. In addition, since the rotating speed of the substrate can be decreased, spattering of the developer can be inhibited. Further, a throughput can be improved by stirring the developer.
Abstract translation: 显影方法包括：通过基板保持器水平保持曝光的基板; 通过从显影剂喷嘴提供显影剂，在基底的一部分上形成液体熔池; 旋转基板; 通过使显影剂喷嘴移动使得旋转基板上的显影剂的供给位置沿基板的径向方向移动，将液体熔池分散在基板的整个表面上; 使液体熔池在基板的整个表面上的扩展同时与接触部分与液体熔池接触，接触部分被构造成与显影剂喷嘴一起移动并且具有与基板相对的表面， 小于衬底的表面。 根据该方法，能够抑制向基板外侧落下的液体的量。 此外，由于可以降低基板的旋转速度，可以抑制显影剂的飞溅。 此外，可以通过搅拌显影剂来提高生产量。
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Patent Agency Ranking
公开(公告)号：US20190096706A1
公开(公告)日：2019-03-28
申请号：US16139392
申请日：2018-09-24
Applicant: Tokyo Electron Limited
Inventor： Akiko Kai , Kouichirou Tanaka , Hiroshi Ichinomiya , Masahiro Fukuda
IPC: H01L21/67 , H01L21/687
Abstract: When performing a liquid processing on a substrate W being rotated and removing a processing liquid by a cleaning liquid, a cleaning liquid nozzle 421 configured to discharge a cleaning liquid slantly with respect to a surface of the substrate W toward a downstream side of a rotational direction of the substrate W and a gas nozzle 411 configured to discharge a gas toward a position adjacent to a central portion side of the substrate W when viewed from a liquid arrival position R of the cleaning liquid are moved from the central portion side toward a peripheral portion side. A rotation number of the substrate is varied such that rotation number in a period during which the liquid arrival position R moves in the second region becomes smaller than a maximum rotation number in a period during which the liquid arrival position moves in the first region.
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公开(公告)号：US10128136B2
公开(公告)日：2018-11-13
申请号：US15671325
申请日：2017-08-08
Applicant: Tokyo Electron Limited
Inventor： Masahiro Fukuda , Hiroshi Ichinomiya , Koichi Obata , Taro Yamamoto , Kouichirou Tanaka
IPC: H01L21/76 , H01L21/67 , B05C5/02 , B05C11/08 , B05C11/10 , B08B3/08 , B08B3/10 , G03F7/16 , H01L21/027 , G03F7/30
Abstract: There is provided a guide member 3 in which an inclined surface 32 thereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding member 2 which surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding member 2 has, at an inner surface side thereof, two groove portions 23 extended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member 2, a vortex flow is formed within the groove portions 23 and stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup body 1 can be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.
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公开(公告)号：US10120285B2
公开(公告)日：2018-11-06
申请号：US15374081
申请日：2016-12-09
Applicant: Tokyo Electron Limited
Inventor： Kousuke Yoshihara , Hideharu Kyouda , Koshi Muta , Taro Yamamoto , Yasushi Takiguchi , Masahiro Fukuda
Abstract: A developing apparatus including a horizontal substrate holder, a rotating mechanism to rotate the substrate holder, a developer nozzle to supply a developer onto a part of the substrate to form a liquid puddle, a moving mechanism to move the developer nozzle in a radial direction of the rotating substrate, a contact part that moves with the developer nozzle and has a surface opposed to the substrate, which is smaller than the surface of the substrate, and a control unit to output a control signal such that a supply position of the developer on the substrate is moved in the radial direction of the substrate so that the liquid puddle is spread out on a whole surface of the substrate while the contact part is in contact with the liquid puddle.
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公开(公告)号：US10108111B1
公开(公告)日：2018-10-23
申请号：US15936818
申请日：2018-03-27
Applicant: TOKYO ELECTRON LIMITED
Inventor： Takeshi Shimoaoki , Yusaku Hashimoto , Masahiro Fukuda
Abstract: A developing method includes: horizontally holding a substrate; disposing an opposing surface of a developer nozzle that faces a portion of a surface of the substrate, above one of central and peripheral portions of the surface; discharging a developer to form a liquid collection portion of the developer; spreading the liquid collection portion by moving the developer nozzle toward the other of the central and peripheral portions with the opposing surface brought into contact with the liquid collection portion; lifting the developer nozzle relative to the surface while stopping the discharge of the developer, and pulling up a portion of the liquid collection portion; stopping the lifting, and forming a pillar of the developer having a tapered upper end which is brought into contact with the opposing surface; and applying a shearing force to the pillar to shear the tapered upper end and separating the pillar from the opposing surface.
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公开(公告)号：US20180047592A1
公开(公告)日：2018-02-15
申请号：US15671325
申请日：2017-08-08
Applicant: Tokyo Electron Limited
Inventor： Masahiro Fukuda , Hiroshi Ichinomiya , Koichi Obata , Taro Yamamoto , Kouichirou Tanaka
CPC classification number: H01L21/6715 , B05C5/0258 , B05C11/08 , B05C11/1002 , B08B3/08 , B08B3/10 , G03F7/162 , G03F7/3021 , H01L21/0273 , H01L21/67051 , H01L21/67178
Abstract: There is provided a guide member 3 in which an inclined surface 32 thereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding member 2 which surrounds the wafer W and in which an upper peripheral portion thereof is inwardly extended obliquely upwards. Further, the surrounding member 2 has, at an inner surface side thereof, two groove portions 23 extended along an entire circumference and located above a height position of the horizontally held wafer W. If an air flow flows along the surrounding member 2, a vortex flow is formed within the groove portions 23 and stays therein. Thus, mist can be captured, so that the flow of the mist to the outside of a cup body 1 can be suppressed. Accordingly, the adhesion of the mist to the wafer W can be suppressed.
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