公开(公告)号：US12112954B2

公开(公告)日：2024-10-08

申请号：US17160780

申请日：2021-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Maju Tomura ,  Tomohiko Niizeki ,  Takayuki Katsunuma ,  Hironari Sasagawa ,  Yuta Nakane ,  Shinya Ishikawa ,  Kenta Ono ,  Sho Kumakura ,  Yusuke Takino ,  Masanobu Honda

IPC: H01L21/311 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32055 ,  H01L21/32137 ,  H01L21/32139

Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

公开(公告)号：US11459655B2

公开(公告)日：2022-10-04

申请号：US16522890

申请日：2019-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michiko Nakaya ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: A plasma processing method executed by a plasma processing apparatus in the present disclosure includes a first step and a second step. In the first step, the plasma processing apparatus forms a first film on the side walls of an opening in the processing target, the first film having different thicknesses along a spacing between pairs of side walls facing each other. In the second step, the plasma processing apparatus forms a second film by performing a film forming cycle once or more times after the first step, the second film having different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US11355350B2

公开(公告)日：2022-06-07

申请号：US17114508

申请日：2020-12-08

Applicant: Tokyo Electron Limited

Inventor： Shinya Ishikawa ,  Kenta Ono ,  Maju Tomura ,  Masanobu Honda

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  C23C16/24 ,  B05D1/00 ,  C23C16/56 ,  B05D3/14 ,  C23C16/455 ,  H01J37/32

Abstract: A system, apparatus and method enable etching of a layer of a substrate with reduced etching on the surface of a side wall of the layer. The etching method includes forming a protective layer on a surface of the side wall defining a recess in the layer. The protective layer contains phosphorus. The etching method further includes etching the layer in one or more additional cycles so as to increase a depth of the recess after the forming the protective layer.

公开(公告)号：US11955337B2

公开(公告)日：2024-04-09

申请号：US17298332

申请日：2019-07-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toru Hisamatsu ,  Takayuki Katsunuma ,  Shinya Ishikawa ,  Yoshihide Kihara ,  Masanobu Honda

IPC: H01L21/033 ,  H01L21/311 ,  C23C16/04

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  C23C16/042

Abstract: A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.

公开(公告)号：US20230018151A1

公开(公告)日：2023-01-19

申请号：US17947922

申请日：2022-09-19

Applicant: Tokyo Electron Limited

Inventor： Shinya Ishikawa ,  Toru Hisamatsu

IPC: H01L21/311 ,  H01L21/027 ,  H01J37/32

Abstract: An apparatus for processing a substrate for processing a substrate includes: one or more processing chambers, a plasma generator, and a controller. The controller causes (a) providing a substrate having an etching region and a patterned region on the etching region; (b) forming an organic film on a surface of the substrate; and (c) etching the etching region through the patterned region using plasma generated from a processing gas. The step (b) includes (b1) supplying a first gas containing an organic compound to the substrate to form a precursor layer on the substrate, and (b2) supplying a second gas containing a modifying gas to the substrate and supplying energy to the precursor layer and/or the second gas to modify the precursor layer. In (b2), the precursor layer is modified by plasma generated from the second gas.

公开(公告)号：US11244804B2

公开(公告)日：2022-02-08

申请号：US16775960

申请日：2020-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Nishide ,  Toru Hisamatsu ,  Shinya Ishikawa

IPC: H01J37/18 ,  C23C16/505 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/311

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

公开(公告)号：US11651971B2

公开(公告)日：2023-05-16

申请号：US17351549

申请日：2021-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenta Ono ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31144 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/31116

Abstract: An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.

公开(公告)号：US11488836B2

公开(公告)日：2022-11-01

申请号：US16999145

申请日：2020-08-21

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  G03F7/40 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

公开(公告)号：US11476123B2

公开(公告)日：2022-10-18

申请号：US17015088

申请日：2020-09-09

Applicant: Tokyo Electron Limited

Inventor： Takayuki Katsunuma ,  Masanobu Honda ,  Yuta Nakane ,  Shinya Ishikawa

IPC: H01L21/311 ,  H01J37/32

Abstract: An etching method includes (a) performing a plasma etching on an organic film, having a mask formed thereon, to form a recess in the organic film; (b) forming an organic protective film on a side wall surface of the recess in the organic film; and (c) performing an additional plasma etching on the organic film after (b).

公开(公告)号：US11264236B2

公开(公告)日：2022-03-01

申请号：US16714218

申请日：2019-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toru Hisamatsu ,  Takayuki Katsunuma ,  Shinya Ishikawa ,  Yoshihide Kihara ,  Masanobu Honda

IPC: H01L21/02

Abstract: A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.