公开(公告)号：US09702039B2

公开(公告)日：2017-07-11

申请号：US14819038

申请日：2015-08-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Nishide ,  Takashi Matsumoto ,  Munehito Kagaya ,  Ryota Ifuku

IPC: C23C16/18 ,  C23C16/26 ,  C23C16/46 ,  C23C16/455 ,  H01L21/687 ,  C23C16/02 ,  C23C16/56 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C01B31/04 ,  H01L21/67

CPC classification number: C23C16/26 ,  C01B31/0453 ,  C01B32/186 ,  C23C16/0218 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/45523 ,  C23C16/46 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/67103 ,  H01L21/68742 ,  H01L21/76864 ,  H01L21/76876 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for forming a base film of a graphene includes: forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas; heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas; and heating the substrate to a temperature at which crystal grains of metal are grown in the metal film, wherein the temperature of the substrate in the heating the substrate to a temperature at which crystal grains of metal are grown in the metal film is higher than the temperature of the substrate in the heating the substrate to a temperature at which impurities included in the formed metal film are eliminated as a gas.

公开(公告)号：US10378104B2

公开(公告)日：2019-08-13

申请号：US15151760

申请日：2016-05-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Nishide ,  Takashi Matsumoto ,  Munehito Kagaya

IPC: C23C16/26 ,  H01L21/285 ,  H01L21/768 ,  C01B32/16 ,  C01B32/162 ,  H01L23/532

Abstract: A carbon nanotube producing method, which is capable of realizing a low resistant depth-wise wiring. An acetylene gas is first supplied as a carbon-containing gas and subsequently, an ethylene gas is supplied as the carbon-containing gas such that carbon nanotubes are produced.

公开(公告)号：US09822009B2

公开(公告)日：2017-11-21

申请号：US14947659

申请日：2015-11-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito Kagaya ,  Takashi Matsumoto ,  Daisuke Nishide

IPC: C01B31/04 ,  C23C16/26 ,  C23C16/02 ,  C23C16/452 ,  C23C16/455 ,  C01B32/186

CPC classification number: C01B32/186 ,  C01B2204/32 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574

Abstract: A graphene producing method which is capable of increasing a size of each domain of graphene. A plasma CVD film formation device that activates a catalyst metal layer formed on a wafer; modifies the same into an activated catalyst metal layer; decomposes a C2H4 gas as a low reactivity carbon-containing gas by plasma in a space that opposes the wafer; and decomposes a C2H2 gas as a high reactivity carbon-containing gas by heat in the space.

公开(公告)号：US11955316B2

公开(公告)日：2024-04-09

申请号：US17035899

申请日：2020-09-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki Katsunuma ,  Daisuke Nishide

IPC: H01J37/32 ,  H01L21/311 ,  C23C16/34 ,  C23C16/40

CPC classification number: H01J37/32174 ,  H01J37/3244 ,  H01L21/31116 ,  C23C16/345 ,  C23C16/401 ,  H01J2237/332 ,  H01J2237/334

Abstract: A substrate processing method includes: providing a substrate including a first region and a second region into a chamber; forming a deposit film on the first region and the second region of the substrate by generating a first plasma from a first processing gas, and selectively etching the first region with respect to the second region by generating a second plasma from the second processing gas containing an inert gas. The first processing gas is a mixed gas including a first gas containing carbon atoms and fluorine atoms and a second gas containing silicon atoms.

公开(公告)号：US11244804B2

公开(公告)日：2022-02-08

申请号：US16775960

申请日：2020-01-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Nishide ,  Toru Hisamatsu ,  Shinya Ishikawa

IPC: H01J37/18 ,  C23C16/505 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/311

Abstract: An etching method includes: providing a substrate having a film and a patterned mask on the film; forming a silicon-containing layer including silicon, carbon, and nitrogen on the substrate using a precursor gas containing silicon; and performing a plasma etching on the film. The substrate is placed under a depressurized environment for a time period from a start time point of the step of forming the silicon-containing layer on the substrate to an end time point of the step of performing the plasma etching on the film.

公开(公告)号：US11501975B2

公开(公告)日：2022-11-15

申请号：US17133974

申请日：2020-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Nishide ,  Takayuki Katsunuma

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: A substrate processing method includes a providing step, a forming step, and an etching step. In the providing step, a substrate including an etching target film, a first mask formed on the etching target film, and a second mask formed to cover at least a part of the first mask is provided. In the forming step, a protective film is formed on a side wall of the second mask by plasma generated from a first gas. In the etching step, the etching target film is etched with plasma generated from a second gas.

公开(公告)号：US10600621B2

公开(公告)日：2020-03-24

申请号：US16087249

申请日：2017-03-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masato Morishima ,  Katsuhiko Iwabuchi ,  Takashi Fuse ,  Madoka Fujimoto ,  Daisuke Nishide

IPC: H01J37/32 ,  C03C17/42 ,  C23C16/509 ,  H05H1/46

Abstract: A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.