公开(公告)号：US20240087857A1

公开(公告)日：2024-03-14

申请号：US18518696

申请日：2023-11-24

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shoichiro MATSUYAMA ,  Makoto KATO

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32568

Abstract: A plasma processing apparatus includes a substrate support. The substrate support includes a base, an electrostatic chuck, a chuck electrode, and an electrode structure. The electrostatic chuck is disposed on the base and has a central region and an annular region. The chuck electrode is disposed in the central region. The electrode structure is disposed below the chuck electrode in the central region and is placed in an electrically floating state. The electrode structure includes a first electrode layer, a second electrode layer disposed below the first electrode layer, and one or more connectors that connect the first electrode layer and the second electrode layer. At least one bias power supply is electrically coupled to the substrate support.

公开(公告)号：US20230369019A1

公开(公告)日：2023-11-16

申请号：US18227370

申请日：2023-07-28

Applicant: Tokyo Electron Limited

Inventor： Gen TAMAMUSHI ,  Chishio KOSHIMIZU ,  Masahiro INOUE ,  Shoichiro MATSUYAMA

IPC: H01J37/32

CPC classification number: H01J37/32137 ,  H01J37/3299 ,  H01J37/32183 ,  H01J2237/327

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply controller. The radio-frequency power supply generates source radio-frequency power to generate plasma in the chamber. The bias power supply periodically provides bias energy having a waveform cycle to a bias electrode on the substrate support. The radio-frequency power supply adjusts a source frequency of the source radio-frequency power in an n-th phase period in an m-th waveform cycle of a plurality of waveform cycles based on a change in a degree of reflection of the source radio-frequency power. The change in the degree of reflection is identified with the source frequency being set differently in the n-th phase period in each of two or more waveform cycles preceding the m-th waveform cycle.

公开(公告)号：US20230094655A1

公开(公告)日：2023-03-30

申请号：US17951579

申请日：2022-09-23

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Gen TAMAMUSHI ,  Masahiro INOUE ,  Yuto KOSAKA ,  Shoichiro MATSUYAMA

IPC: H01J37/32

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

公开(公告)号：US20220375731A1

公开(公告)日：2022-11-24

申请号：US17746958

申请日：2022-05-18

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shoichiro MATSUYAMA

IPC: H01J37/32

Abstract: A substrate support disclosed herein includes a base and an electrostatic chuck (ESC). The ESC is located on the base. The base and the electrostatic chuck provide a first region configured to support a substrate and a second region extending to surround the first region and configured to support an edge ring. The first region or the second region includes a variable capacitor portion configured to have variable electrostatic capacitance.

公开(公告)号：US20180350565A1

公开(公告)日：2018-12-06

申请号：US15995373

申请日：2018-06-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shoichiro MATSUYAMA ,  Naoki TAMARU ,  Yasuharu SASAKI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period.

公开(公告)号：US20150179466A1

公开(公告)日：2015-06-25

申请号：US14574565

申请日：2014-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wataru TAKAYAMA ,  Shoichiro MATSUYAMA ,  Susumu NOGAMI ,  Daisuke TAMURA ,  Kyosuke HAYASHI ,  Jun KAWANOBE

IPC: H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01L21/31144 ,  H01L21/32137 ,  H01L27/11582

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括提供一种待处理对象，其包括通过在等离子体处理装置的处理容器内交替层叠具有不同介电系数的第一膜和第二膜而形成的多层膜; 并且重复地执行包括：向所述处理容器供应包括O 2气体或N 2气体的第一气体和稀有气体，并且激发所述第一气体，将包括碳氟化合物气体或氟代烃气体的第二气体供应到所述处理容器中并激发 第二气体，并且将包括HBr气体，含氟气体，氟碳化合物气体或氟代烃气体的第三气体供给到处理容器中并激发第三气体，从而通过掩模蚀刻多层膜。

公开(公告)号：US20140284308A1

公开(公告)日：2014-09-25

申请号：US14219437

申请日：2014-03-19

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOKYO ELECTRON LIMITED

Inventor： Shoichiro MATSUYAMA ,  Akitaka SHIMIZU ,  Susumu NOGAMI ,  Kiyohito ITO ,  Tokuhisa OHIWA ,  Katsunori YAHASHI

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/334

Abstract: There are provided a plasma etching method and a plasma etching apparatus, capable of suppressing occurrence of local bias in etching rate and suppressing occurrence of charge-up damage. The plasma etching method of etching a silicon layer of a substrate to be processed using the plasma etching apparatus sets the pressure in a processing chamber to 13.3 Pa or more and applies, to a lower electrode, a first high-frequency power with a first frequency and a second high-frequency power with a second frequency that is lower than the first frequency and is a frequency of 1 MHz or lower.

Abstract translation: 提供了等离子体蚀刻方法和等离子体蚀刻装置，其能够抑制蚀刻速度中的局部偏置的发生并且抑制充电损伤的发生。 使用等离子体蚀刻装置对待处理的基板的硅层进行蚀刻的等离子体蚀刻方法将处理室内的压力设定为13.3Pa以上，并向下部电极施加具有第一频率的第一高频电力 以及具有低于第一频率的第二频率并且是1MHz或更低的频率的第二高频功率。