公开(公告)号：US10573539B2

公开(公告)日：2020-02-25

申请号：US15535882

申请日：2015-12-15

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Komiya ,  Yasuhiro Takaki ,  Shinichi Umeno ,  Koji Tanaka ,  Takami Satoh ,  Atsushi Anamoto

IPC: H01L21/67 ,  B08B3/04

Abstract: A substrate liquid processing apparatus includes a transfer section, a processing section, a reservoir and a liquid sending mechanism. The transfer section includes a transfer device configured to transfer a substrate. The processing section is provided adjacent to the transfer section in a horizontal direction, and includes a liquid processing unit configured to process the substrate by using a processing liquid. The reservoir is configured to store the processing liquid therein. The liquid sending mechanism is configured to send out the processing liquid stored in the reservoir into the liquid processing unit. The reservoir is disposed directly under the transfer section. Further, the liquid sending mechanism is disposed directly under the processing section. Space saving of the substrate liquid processing apparatus can be achieved.

公开(公告)号：US10483137B2

公开(公告)日：2019-11-19

申请号：US15649757

申请日：2017-07-14

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Masutomi ,  Toshiyuki Shiokawa ,  Koji Tanaka ,  Takami Satoh

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/311 ,  G02F1/1333 ,  H01L21/8234 ,  G02F1/13

Abstract: The substrate liquid processing apparatus includes a processing bath that accommodates substrates, and a plurality of gas supply pipes provided in a processing bath. Ejection holes of one gas supply pipe and ejection holes of another adjacent gas supply pipe do not overlap each other in a direction parallel to the circuit-formed surfaces of the substrates.

公开(公告)号：US10276408B2

公开(公告)日：2019-04-30

申请号：US14850139

申请日：2015-09-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Michitaka Amiya ,  Takami Satoh ,  Kazuyoshi Eshima ,  Akihiro Nakamura ,  Koji Tanaka ,  Kazuki Kosai

IPC: H01L21/67 ,  B01D19/02 ,  B01F3/08 ,  B01F15/00 ,  B01F15/02 ,  B08B3/08 ,  G05D7/01 ,  G05D11/13

Abstract: A flow-rate regulator device for controlling a flow rate of a liquid includes a first flow-rate regulator component positioned on an upstream side of a liquid line, and a second flow-rate regulator component positioned on a downstream side of the liquid line and connected in series to the first flow-rate regulator component. The first flow-rate regulator component adjusts a degree of opening such that a flow rate of liquid flowing through the liquid line is set a specified number of times greater than a target flow rate when the second flow-rate regulator component has a full opening, and the second flow-rate regulator component adjusts a degree of opening such that the flow rate of the liquid flowing through the liquid line is to be at the target flow rate when the first flow-rate regulator component is adjusted to have the degree of opening.

公开(公告)号：US20180025927A1

公开(公告)日：2018-01-25

申请号：US15649757

申请日：2017-07-14

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki Masutomi ,  Toshiyuki Shiokawa ,  Koji Tanaka ,  Takami Satoh

IPC: H01L21/67

CPC classification number: H01L21/67253 ,  G02F1/1303 ,  G02F1/1333 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67086 ,  H01L21/67109 ,  H01L21/67313 ,  H01L21/823431

Abstract: The substrate liquid processing apparatus includes a processing bath that accommodates substrates, and a plurality of gas supply pipes provided in a processing bath. Ejection holes of one gas supply pipe and ejection holes of another adjacent gas supply pipe do not overlap each other in a direction parallel to the circuit-formed surfaces of the substrates.

公开(公告)号：US09109934B2

公开(公告)日：2015-08-18

申请号：US13864654

申请日：2013-04-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ryoji Ando ,  Takami Satoh

IPC: G01F1/66 ,  B05C11/10

CPC classification number: G01F1/66 ,  B05C11/1013

Abstract: According to an embodiment of the present disclosure, an apparatus is configured to perform a solution process by supplying a processing solution from a processing solution supply source to the substrate held on a substrate holder via a flow path member and a nozzle at a flow rate equal to or less than 1 mL/sec. The apparatus includes a solution transfer unit configured to transfer the processing solution to the nozzle, and mounted to the flow path member, and an ultrasonic flowmeter mounted to the flow path member at a downstream side from the solution transfer unit. In this embodiment, a lower limit of a flow rate range which is measured by the ultrasonic flowmeter is equal to or less than 1 mL/sec.

Abstract translation: 根据本公开的实施例，一种装置被配置为通过经由流路构件和喷嘴以相同的流量将处理溶液供应源提供给保持在基板保持器上的基板的处理溶液来执行解决方案处理 至或小于1mL / sec。 该装置包括：溶液转移单元，其被配置为将处理溶液转移到喷嘴并安装到流路构件;以及超声波流量计，安装到流路构件，在溶液转移单元的下游侧。 在本实施方式中，由超声波流量计测定的流量范围的下限为1mL /秒以下。

公开(公告)号：US20150146498A1

公开(公告)日：2015-05-28

申请号：US14543951

申请日：2014-11-18

Applicant: Tokyo Electron Limited

Inventor： Yasuo Kiyohara ,  Ikuo Sunaka ,  Koji Tanaka ,  Takami Satoh ,  Kazuyoshi Mizumoto ,  Takashi Uno ,  Hirotaka Maruyama ,  Hidetomo Uemukai ,  Tomiyasu Maezono

IPC: B01F15/04 ,  B01F15/02 ,  B01F3/08

CPC classification number: G05D11/132 ,  B01F3/088 ,  B01F15/0479

Abstract: A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. The first and second opening/closing valves open/close a first flow path and a second flow path, respectively. The first and second flow rate measuring units measure flow rates of the first and second liquids flowing through the first and second flow paths, respectively. The control unit controls opening/closing of the first opening/closing valve and the second opening/closing valve. The substrate processing unit processes a substrate by supplying a mixed liquid of the first and second liquids to the substrate.

Abstract translation: 基板处理装置包括混合槽，第一开闭阀，第二开闭阀，第一流量测量单元，第二流量测量单元，控制单元和基板处理单元。 混合第一液体和第二液体，使得第二液体的混合量大于第一液体的量。 第一和第二打开/关闭阀分别打开/关闭第一流动路径和第二流动路径。 第一和第二流量测量单元分别测量流过第一和第二流路的第一和第二液体的流量。 控制单元控制第一打开/关闭阀和第二打开/关闭阀的打开/关闭。 基板处理单元通过将第一和第二液体的混合液体供给到基板来处理基板。