公开(公告)号：US20170221703A1

公开(公告)日：2017-08-03

申请号：US15420579

申请日：2017-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/687 ,  C23C8/34

CPC classification number: H01L21/02277 ,  C23C8/34 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45551 ,  C23C28/04 ,  C23C28/046 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/332 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764

Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

公开(公告)号：US20230335394A1

公开(公告)日：2023-10-19

申请号：US18194722

申请日：2023-04-03

Applicant: Tokyo Electron Limited

Inventor： Kiwamu ITO ,  Yamato TONEGAWA ,  Takeshi OYAMA

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/36

CPC classification number: H01L21/02271 ,  H01L21/0217 ,  H01L21/02167 ,  C23C16/345 ,  C23C16/36

Abstract: A film forming method for forming a silicon nitride film on a substrate, includes supplying a silicon-containing gas into a processing chamber accommodating the substrate, and after the supplying the silicon-containing gas, supplying a nitrogen-containing gas into the processing chamber accommodating the substrate. An internal pressure of the processing chamber during the supplying the nitrogen-containing gas is set higher than an internal pressure of the processing chamber during the supplying the silicon-containing gas.

公开(公告)号：US20200294787A1

公开(公告)日：2020-09-17

申请号：US16890216

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34 ,  C23C16/04

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US20190292662A1

公开(公告)日：2019-09-26

申请号：US16363488

申请日：2019-03-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Jun OGAWA ,  Noriaki FUKIAGE ,  Hiroaki IKEGAWA ,  Yasuo KOBAYASHI ,  Takeshi OYAMA

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/44 ,  C23C16/50

Abstract: A film-forming method includes: mounting a substrate on a mounting table in a vacuu container; adsorbing a raw material to the substrate by supplying raw material gas containing silicon into the vacuum container; nitriding the raw material by supplying nitriding gas to a plasma formation region inside the vacuum container and supplying plasmarized gas to the substrate; forming a silicon-containing nitride film on the substrate by alternately and repeatedly performing the adsorbing a raw material and the nitriding the raw material; setting stress of the silicon-containing nitride film before the adsorbing a raw material and nitriding the raw material; and adjusting a nitriding time having a length based on first correspondence relationship between the stress of the silicon-containing nitride film and parameter corresponding to the nitriding time in the plasma formation region, and the set stress of the silicon-containing nitride film.

公开(公告)号：US20180358235A1

公开(公告)日：2018-12-13

申请号：US16002081

申请日：2018-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi HANE ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Jun OGAWA ,  Noriaki FUKIAGE ,  Hiroaki IKEGAWA ,  Yasuo KOBAYASHI ,  Takeshi OYAMA

IPC: H01L21/3213 ,  H01L21/02 ,  H01J37/32

CPC classification number: H01L21/32139 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32834 ,  H01J2237/334 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/32136

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.

公开(公告)号：US20170271143A1

公开(公告)日：2017-09-21

申请号：US15459441

申请日：2017-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.