公开(公告)号：US20220084811A1

公开(公告)日：2022-03-17

申请号：US17468875

申请日：2021-09-08

Applicant: Tokyo Electron Limited

Inventor： Jun OGAWA ,  Takayuki KARAKAWA

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/511 ,  C23C16/458 ,  C23C16/455

Abstract: A deposition method for embedding a SiN film in a recessed pattern formed on a surface of a substrate includes: (a) activating and supplying a first process gas containing NH3 to the surface of the substrate and causing NHx groups to adsorb on the surface of the substrate, where x is 1 or 2; (b) supplying a silicon-containing gas to the surface of the substrate on which the NHx groups are adsorbed and causing the silicon-containing gas to adsorb on the NHx groups; and (c) activating and supplying a second process gas containing N2 to the surface of the substrate on which the NHx groups are adsorbed and partly replacing the NHx groups with N groups, wherein (a) and (b) are repeated, and (c) is performed every time (a) and (b) are repeated a predetermined number of times.

公开(公告)号：US20180355479A1

公开(公告)日：2018-12-13

申请号：US16001556

申请日：2018-06-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KARAKAWA ,  Jun OGAWA ,  Noriaki FUKIAGE ,  Yasuo KOBAYASHI

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C16/4405 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4584 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/67028

Abstract: A film forming apparatus is provided for forming a film by revolving a substrate placed on a rotary table in a vacuum container, alternately supplying a precursor gas and a reaction gas that reacts with the precursor gas to generate a reaction product multiple times, and depositing the reaction product on the substrate. The film forming apparatus comprises a precursor gas supply region that supplies the precursor gas onto the substrate, one or more plasma generation regions that generate plasma at a position apart from the precursor gas supply region in a rotational direction of the rotary table, and a cleaning region that cleans the rotary table by supplying a cleaning gas onto the rotary table in a region apart from the plasma generation regions and the precursor gas supply region in the rotational direction when a film forming process is not performed on the substrate.

公开(公告)号：US20180135170A1

公开(公告)日：2018-05-17

申请号：US15809442

申请日：2017-11-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033

CPC classification number: C23C16/345 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/511 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/0332 ,  H01L21/0337

Abstract: An apparatus includes a raw material gas supply part including a discharge part for discharging a raw material gas and an exhaust port formed to surround the discharge part, reaction and modification regions formed apart from the raw material gas supply part, a reaction gas discharge part for discharging a reaction gas toward one of upstream and downstream sides, a modification gas discharge part for discharging a modification gas toward one of upstream and downstream sides, a reaction gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the reaction region, a modification gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the modification region, and plasma generation parts for reaction gas and modification gas which activate gases respectively supplied to the reaction and modification regions.

公开(公告)号：US20180245216A1

公开(公告)日：2018-08-30

申请号：US15899672

申请日：2018-02-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun OGAWA ,  Noriaki FUKIAGE ,  Shimon OTSUKI ,  Muneyuki OTANI ,  Takayuki KARAKAWA ,  Takeshi OYAMA ,  Masahide IWASAKI

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/683 ,  C23C16/34

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/511 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/6835

Abstract: A film forming apparatus for carrying out a film forming process on a substrate by performing a cycle of sequentially supplying a first processing gas and a second processing gas a plurality of times in a vacuum container, includes: a rotary table having one surface on which a substrate mounting region for mounting a substrate is formed; a first gas supply part including a gas discharge portion having gas discharge holes of a first gas with a uniform hole diameter, an exhaust port surrounding the gas discharge portion, and a purge gas discharge port surrounding the gas discharge portion, which are formed on an opposing surface opposite the rotary table; a second gas supply part configured to supply a second gas to a region spaced apart in a circumferential direction of the rotary table from the first gas supply part; and an evacuation port configured to evacuate the vacuum container.

公开(公告)号：US20170221703A1

公开(公告)日：2017-08-03

申请号：US15420579

申请日：2017-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/687 ,  C23C8/34

CPC classification number: H01L21/02277 ,  C23C8/34 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45551 ,  C23C28/04 ,  C23C28/046 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/332 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764

Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

公开(公告)号：US20140242814A1

公开(公告)日：2014-08-28

申请号：US14187404

申请日：2014-02-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KARAKAWA

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/511 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

Abstract: Disclosed is a method of forming a nitride film on an object to be processed (“processed object”). The method includes: exposing the processed object to dichlorosilane which is a The method includes a step (step (a)) of exposing the processed object to dichlorosilane which is a precursor gas and a step (step (b)) of exposing the processed object to plasma of a processing gas which includes an ammonia gas and a hydrogen gas after step (a). Alternatively, step (a) and step (b) may be alternately repeated and a step of removing dichlorosilane (step (c)) may be further provided between step (a) and step (b).

Abstract translation: 公开了在待处理物体（“被处理物体”）上形成氮化物膜的方法。 该方法包括：将经处理的物体暴露于二氯硅烷中，该方法包括使经处理物体暴露于作为前体气体的二氯硅烷的步骤（步骤（a））和使经处理物体曝光的步骤（步骤（b）） 涉及在步骤（a）之后包括氨气和氢气的处理气体的等离子体。 或者，可以交替地重复步骤（a）和步骤（b），并且可以在步骤（a）和步骤（b）之间进一步提供除去二氯硅烷的步骤（步骤（c））。

公开(公告)号：US20200294787A1

公开(公告)日：2020-09-17

申请号：US16890216

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34 ,  C23C16/04

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US20170271143A1

公开(公告)日：2017-09-21

申请号：US15459441

申请日：2017-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US20170186606A1

公开(公告)日：2017-06-29

申请号：US15379526

申请日：2016-12-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Akihiro KURIBAYASHI ,  Jun OGAWA

IPC: H01L21/02 ,  H01L21/687 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34

CPC classification number: H01L21/02274 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45563 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film forming method for forming a silicon nitride film on a substrate within a vacuum container includes a first process of supplying a gas of a silicon raw material to the substrate to cause the silicon raw material gas to be adsorbed onto the substrate, a second process of subsequently supplying an ammonia gas to the substrate in a non-plasma-converted state to cause the ammonia gas to be physically adsorbed onto the substrate, a third process of subsequently forming a reaction product layer by supplying active species obtained by plasma-converting a plasma-forming gas for forming plasma to the substrate, thereby causing ammonia physically adsorbed onto the substrate to react with the silicon raw material, and forming the silicon nitride film by depositing the reaction product layer by repeating multiple times a cycle including the first process, the second process and the third process.

公开(公告)号：US20230137865A1

公开(公告)日：2023-05-04

申请号：US18049661

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Takayuki KARAKAWA ,  Kotaro MIYATANI ,  Hideo NAKAMURA ,  Katsushige HARADA ,  Yuichiro MOROZUMI

IPC: H01L27/108 ,  C23C16/56 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: A method of forming a crystalline structure film containing strontium, titanium, and oxygen on a substrate, includes: forming an amorphous structure film on a surface of a titanium nitride film formed on a surface of the substrate, the amorphous structure film containing strontium and oxygen and having a titanium content adjusted so that a content ratio of titanium to strontium based on the number of atoms becomes a value in a range of 0 or more and less than 1.0; and obtaining a crystalline structure film containing strontium, titanium and oxygen and containing titanium diffused from the titanium nitride film by heating the substrate, on which the amorphous structure film is formed, at a temperature of 500 degrees C. or higher.