公开(公告)号：US20170221703A1

公开(公告)日：2017-08-03

申请号：US15420579

申请日：2017-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/687 ,  C23C8/34

CPC classification number: H01L21/02277 ,  C23C8/34 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45551 ,  C23C28/04 ,  C23C28/046 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32715 ,  H01J2237/332 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764

Abstract: A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

公开(公告)号：US20230175125A1

公开(公告)日：2023-06-08

申请号：US18053880

申请日：2022-11-09

Applicant: Tokyo Electron Limited

Inventor： Hideomi HANE ,  Akihiro KURIBAYASHI ,  Noriaki FUKIAGE

IPC: C23C16/44 ,  B08B7/00 ,  B08B13/00 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/4405 ,  B08B7/0035 ,  B08B13/00 ,  C23C16/4584 ,  C23C16/45544 ,  H01L21/0217

Abstract: With respect to a cleaning method of cleaning an inside of a processing chamber in a film deposition apparatus including a rotary table rotatably provided in the processing chamber, multiple mounting areas being provided on the rotary table in a circumferential direction, the cleaning method includes (a) discharging a carrier gas and a cleaning gas with rotating the rotary table, a flow rate of the carrier gas being adjusted to a first flow rate, (b) discharging the carrier gas and the cleaning gas with rotating the rotary table, the flow rate of the carrier gas being adjusted to a second flow rate less than the first flow rate, and (c) performing switching from (a) to (b) and switching from (b) to (a) a predetermined number of times while the rotary table rotates by one revolution, the predetermined number being equal to a number of the multiple mounting areas.

公开(公告)号：US20170218517A1

公开(公告)日：2017-08-03

申请号：US15420322

申请日：2017-01-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA

IPC: C23C16/511 ,  C23C16/34 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/045 ,  C23C16/45536 ,  H01J37/32192 ,  H01J37/32449

Abstract: A method of forming a nitride film in a fine recess formed in a surface of a substrate to be processed, by repeating a process, which includes adsorbing a film forming raw material gas onto the substrate and nitriding the adsorbed film forming raw material gas. The nitriding the adsorbed film forming raw material gas includes converting a NH3 gas as a nitriding gas, and an adsorption inhibiting gas for inhibiting adsorption of the NH3 gas into radicals and supplying the radicals onto the substrate.

公开(公告)号：US20200299835A1

公开(公告)日：2020-09-24

申请号：US16815181

申请日：2020-03-11

Applicant: Tokyo Electron Limited

Inventor： Jun OGAWA ,  Hiroyuki WADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA

IPC: C23C16/44 ,  C23C16/34

Abstract: A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

公开(公告)号：US20180135170A1

公开(公告)日：2018-05-17

申请号：US15809442

申请日：2017-11-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI

IPC: C23C16/34 ,  C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/033

CPC classification number: C23C16/345 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/511 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/0332 ,  H01L21/0337

Abstract: An apparatus includes a raw material gas supply part including a discharge part for discharging a raw material gas and an exhaust port formed to surround the discharge part, reaction and modification regions formed apart from the raw material gas supply part, a reaction gas discharge part for discharging a reaction gas toward one of upstream and downstream sides, a modification gas discharge part for discharging a modification gas toward one of upstream and downstream sides, a reaction gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the reaction region, a modification gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the modification region, and plasma generation parts for reaction gas and modification gas which activate gases respectively supplied to the reaction and modification regions.

公开(公告)号：US20230193464A1

公开(公告)日：2023-06-22

申请号：US18067201

申请日：2022-12-16

Applicant: Tokyo Electron Limited

Inventor： Akihiro KURIBAYASHI ,  Kentaro OSHIMO ,  Hyunyoung GO ,  Yudo SUGAWARA ,  Akashi FUJIO

IPC: C23C16/458 ,  H01L21/687

CPC classification number: C23C16/4586 ,  H01L21/68742 ,  C23C16/4584

Abstract: A substrate-processing-apparatus includes a processing-vessel to accommodate a substrate and to process the substrate; a substrate-support that is provided inside the processing-vessel and has a mounting-surface on which the substrate is mounted; and a lift-pin-mechanism that includes a lift-pin that is movable relative to the substrate-support and a pin-housing-chamber in which the lift-pin is housed, the lift-pin-mechanism being to lift the substrate by raising the lift-pin, wherein the substrate-support has a hole through which the lift-pin is passable, the lift-pin mechanism includes a pressure-regulator that regulates the pressure in the hole by passing inert-gas through the pin-housing-chamber, and at a timing when the substrate is to be lifted, the pressure-regulator adjusts the pressure in the hole to a lifting pressure that is greater than or equal to the pressure in a processing space that is above the mounting-surface and at which the substrate remains continuously mounted on the mounting-surface.

公开(公告)号：US20200294787A1

公开(公告)日：2020-09-17

申请号：US16890216

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34 ,  C23C16/04

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US20170271143A1

公开(公告)日：2017-09-21

申请号：US15459441

申请日：2017-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Toyohiro KAMADA ,  Akihiro KURIBAYASHI ,  Takeshi OYAMA ,  Jun OGAWA ,  Kentaro OSHIMO ,  Shimon OTSUKI ,  Hideomi HANE

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/455

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US20170186606A1

公开(公告)日：2017-06-29

申请号：US15379526

申请日：2016-12-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki FUKIAGE ,  Takayuki KARAKAWA ,  Akihiro KURIBAYASHI ,  Jun OGAWA

IPC: H01L21/02 ,  H01L21/687 ,  C23C16/455 ,  C23C16/02 ,  C23C16/34

CPC classification number: H01L21/02274 ,  C23C16/0209 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45563 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film forming method for forming a silicon nitride film on a substrate within a vacuum container includes a first process of supplying a gas of a silicon raw material to the substrate to cause the silicon raw material gas to be adsorbed onto the substrate, a second process of subsequently supplying an ammonia gas to the substrate in a non-plasma-converted state to cause the ammonia gas to be physically adsorbed onto the substrate, a third process of subsequently forming a reaction product layer by supplying active species obtained by plasma-converting a plasma-forming gas for forming plasma to the substrate, thereby causing ammonia physically adsorbed onto the substrate to react with the silicon raw material, and forming the silicon nitride film by depositing the reaction product layer by repeating multiple times a cycle including the first process, the second process and the third process.