利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

93 条记录 (耗时 0.022 秒)

    Projecting type charged particle microscope and projecting type substrate inspection system
    13.
    发明授权
    Projecting type charged particle microscope and projecting type substrate inspection system 有权
    投影式带电粒子显微镜和突出型基片检查系统

    公开(公告)号：US06310341B1

    公开(公告)日：2001-10-30

    申请号：US09253456

    申请日：1999-02-22

    申请人： Hideo Todokoro ,  Tohru Ishitani ,  Yasutsugu Usami ,  Shunroku Taya ,  Hiroyuki Shinada ,  Taku Ninomiya ,  Tsuyoshi Ohnishi

    发明人： Hideo Todokoro ,  Tohru Ishitani ,  Yasutsugu Usami ,  Shunroku Taya ,  Hiroyuki Shinada ,  Taku Ninomiya ,  Tsuyoshi Ohnishi

    IPC分类号： H01J4944

    CPC分类号： H01J37/28 ,  H01J37/05

    摘要： An irradiation electron beam emitted from an electron gun is deflected by an energy filter, and passes through a first projective lens and an objective lens, and then irradiated onto a sample to produce secondary electrons. The secondary electron beam accelerated by a negative voltage applied to the sample passes through the objective lens and the first projective lens, and deflected by the energy filter to be energy dispersed. Only the secondary electrons having a specified energy pass through energy selecting aperture, and further pass through a second projective lens to form a projected image of the secondary electrons on an imager. Such an electron-optical system may be used for dimension evaluation or inspection of semiconductor substrates.

    摘要翻译： 从电子枪发射的照射电子束被能量过滤器偏转，并通过第一投射透镜和物镜，然后照射到样品上以产生二次电子。 施加到样品的负电压加速的二次电子束通过物镜和第一投射透镜，并被能量过滤器偏转以进行能量分散。 只有具有指定能量的二次电子通过能量选择孔，并且进一步通过第二投影透镜以在成像器上形成二次电子的投影图像。 这样的电子 - 光学系统可以用于半导体衬底的尺寸评估或检查。

    Signal generator and method of generating signal voltages using the same
    14.
    发明授权
    Signal generator and method of generating signal voltages using the same 失效
    信号发生器及使用其产生信号电压的方法

    公开(公告)号：US5198672A

    公开(公告)日：1993-03-30

    申请号：US391292

    申请日：1989-08-09

    申请人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Moritoshi Yasunaga

    发明人： Tsuyoshi Ohnishi ,  Tohru Ishitani ,  Moritoshi Yasunaga

    IPC分类号： G01R31/302

    CPC分类号： G01R31/302

    摘要： A device for generating voltage signals in a semiconductor device upon irradiation with a charged particle beam, wherein a circuit for converting a beam current of the irradiated charged particle beam into the voltage signals is constituted by a bipolar transistor and a load device contained in the semiconductor device, and a portion of the line pattern connected to the base of the bipolar transistor is irradiated with the charged particle beam, so that signals are generated at high speeds even by using a weak charged particle beam without permitting the device to be broken down.

    摘要翻译： 一种用于在照射带电粒子束时在半导体器件中产生电压信号的装置，其中用于将照射的带电粒子束的束电流转换成电压信号的电路由双极晶体管和包含在半导体中的负载装置构成 器件，并且连接到双极晶体管的基极的线图案的一部分被带电粒子束照射，使得即使通过使用弱带电粒子束也不会使器件被分解而以高速产生信号。

    Charged particle beam apparatus and sample manufacturing method
    16.
    发明授权
    Charged particle beam apparatus and sample manufacturing method 有权
    带电粒子束装置和样品制造方法

    公开(公告)号：US07928377B2

    公开(公告)日：2011-04-19

    申请号：US11258035

    申请日：2005-10-26

    申请人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Mitsugu Sato ,  Koichiro Takeuchi

    发明人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Mitsugu Sato ,  Koichiro Takeuchi

    IPC分类号： G01N23/04

    CPC分类号： H01J37/26 ,  G01N1/32 ,  H01J37/28 ,  H01J2237/206 ,  H01J2237/2802 ,  H01J2237/30466 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/31749

    摘要： It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.

    摘要翻译： 通过用离子束照射样品和样品的高分辨率STEM观察，可以通过以高生成量的电子束照射几乎不移动样品来进行高精度的薄膜加工。 FIB照射系统具有与STEM观察电子束照射系统的照射轴几乎正交相交的照射轴。 样品布置在照射轴的交点处。 从STEM观察样品的薄膜平面提取样品的FIB加工面。 发射/散射光束检测器被布置在从电子束照射方向观察的电子束照射轴上样品的后方。

    Methods for sample preparation and observation, charged particle apparatus
    17.
    发明授权
    Methods for sample preparation and observation, charged particle apparatus 有权
    样品制备和观察方法，带电粒子装置

    公开(公告)号：US07915581B2

    公开(公告)日：2011-03-29

    申请号：US12353303

    申请日：2009-01-14

    申请人： Tohru Ishitani ,  Uki Kabasawa ,  Tsuyoshi Ohnishi

    发明人： Tohru Ishitani ,  Uki Kabasawa ,  Tsuyoshi Ohnishi

    IPC分类号： G01N23/00 ,  G21K7/00 ,  A61N5/00 ,  H01J37/08

    CPC分类号： G01N23/225 ,  H01J37/3005 ,  H01J37/3056 ,  H01J2237/1536 ,  H01J2237/31745

    摘要： In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.

    摘要翻译： 在通过重复的FIB横截面处理的横截面的深度方向的SEM观察和用于校正观察视场偏离和聚焦偏差的SEM观察中，校正了当处理的横截面移动时发生的偏差 在其深度方向; 在处理之前计算关于横截面处理区域的表面的高度和倾斜的信息，使用上述信息，SEM视场中的偏差和对应于移动量的SEM观察中的偏差 的预测值，并且根据预测值来控制SEM。

    Charged particle beam apparatus and sample manufacturing method
    18.
    发明申请
    Charged particle beam apparatus and sample manufacturing method 有权
    带电粒子束装置和样品制造方法

    公开(公告)号：US20060097166A1

    公开(公告)日：2006-05-11

    申请号：US11258035

    申请日：2005-10-26

    申请人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Mitsugu Sato ,  Koichiro Takeuchi

    发明人： Tohru Ishitani ,  Tsuyoshi Ohnishi ,  Mitsugu Sato ,  Koichiro Takeuchi

    IPC分类号： G21K7/00 ,  H01J37/08

    CPC分类号： H01J37/26 ,  G01N1/32 ,  H01J37/28 ,  H01J2237/206 ,  H01J2237/2802 ,  H01J2237/30466 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/31749

    摘要： It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.

    摘要翻译： 通过用离子束照射样品和样品的高分辨率STEM观察，可以通过以高生成量的电子束照射几乎不移动样品来进行高精度的薄膜加工。 FIB照射系统具有与STEM观察电子束照射系统的照射轴几乎正交相交的照射轴。 样品布置在照射轴的交点处。 从STEM观察样品的薄膜平面提取样品的FIB加工面。 发射/散射光束检测器被布置在从电子束照射方向观察的电子束照射轴上样品的后方。

    Focused ion beam apparatus and method for irradiating focused ion beam
    19.
    发明授权
    Focused ion beam apparatus and method for irradiating focused ion beam 失效
    聚焦离子束装置和聚焦离子束照射方法

    公开(公告)号：US5852297A

    公开(公告)日：1998-12-22

    申请号：US620764

    申请日：1996-03-22

    申请人： Tohru Ishitani ,  Tsuyoshi Ohnishi

    发明人： Tohru Ishitani ,  Tsuyoshi Ohnishi

    IPC分类号： H01J37/08 ,  G01Q10/00 ,  H01J37/09 ,  H01J37/147 ,  H01J37/26 ,  H01J37/30 ,  H01J37/317

    CPC分类号： H01J37/3007 ,  H01J37/3005 ,  H01J2237/31742

    摘要： An optical system, wherein the total optical path length from the tip of the emitter of the ion source to the surface of the sample is in a range of from 300 to 450 mm, distance from the ion source to the condenser lens center is in a range of from 15 to 45 mm, and distance from the objective lens center to the sample is in a range of from 10 to 40 mm, is installed in an FIB apparatus in order to realize milling of fine elements to higher accuracy at higher speed and image observation in higher resolution in failure analysis and process evaluation of fine elements such as semiconductors.

    摘要翻译： 一种光学系统，其中从离子源的发射极的尖端到样品表面的总光路长度在300-450mm的范围内，从离子源到聚光透镜中心的距离为 范围从15到45毫米，从物镜中心到样品的距离在10到40毫米的范围内，安装在FIB装置中，以便在较高速度下实现精细元件的更高精度的铣削， 图像观察在较高分辨率的故障分析和过程评估中的精细元素如半导体。