公开(公告)号：US07898002B2

公开(公告)日：2011-03-01

申请号：US11890480

申请日：2007-08-07

申请人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

发明人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

IPC分类号： H01L21/337 ,  H01L21/335

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/432 ,  H01L29/66462

摘要： A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.

摘要翻译： 氮化物半导体器件包括：衬底; 形成在所述基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更大的带隙能量的第二氮化物半导体层; 形成在所述第二氮化物半导体层上并且包括具有至少单层结构的p型氮化物半导体的第三氮化物半导体层; 形成在所述第三氮化物半导体层上的栅极; 以及分别形成在位于栅电极两侧的区域中的源电极和漏电极。 所述第三氮化物半导体层的厚度比所述栅极电极侧的部分的厚度大。

公开(公告)号：US20100327293A1

公开(公告)日：2010-12-30

申请号：US12880704

申请日：2010-09-13

申请人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

发明人： Masahiro Hikita ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

IPC分类号： H01L29/20

CPC分类号： H01L29/7786 ,  H01L29/0843 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/432 ,  H01L29/66462 ,  H01L29/7783

摘要： An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.

摘要翻译： 依次形成AlN缓冲层，未掺杂的GaN层，未掺杂的AlGaN层，p型GaN层和重掺杂的p型GaN层。 栅电极与重掺杂的p型GaN层形成欧姆接触。 源电极和漏电极设置在未掺杂的AlGaN层上。 通过在未掺杂的AlGaN层和未掺杂的GaN层和p型GaN层之间的界面处产生的二维电子气在栅极区域中形成pn结，从而可以提高栅极电压。

公开(公告)号：US07859087B2

公开(公告)日：2010-12-28

申请号：US12637240

申请日：2009-12-14

申请人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L23/58

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

公开(公告)号：US20100318707A1

公开(公告)日：2010-12-16

申请号：US12866061

申请日：2008-08-13

申请人： Tsuyoshi Tanaka ,  Nobuo Higaki ,  Takasi Inoue ,  Yosuke Kudo ,  Kazushi Kurata

发明人： Tsuyoshi Tanaka ,  Nobuo Higaki ,  Takasi Inoue ,  Yosuke Kudo ,  Kazushi Kurata

IPC分类号： G06F13/24 ,  G06F9/30

CPC分类号： G06F13/385 ,  G06F3/0611 ,  G06F3/0656 ,  G06F3/0659 ,  G06F3/0683

摘要： An external device access apparatus according to the present invention includes: an address control unit that accepts a prefetch request and a prefetch data readout request from a master and performs a prefetch operation and a prefetch data readout operation; a readout data storage unit that stores data read out through the prefetch operation; a storage operation status holding unit that holds a prefetch operation status indicating whether or not the prefetch operation has been completed; and an acceptance signal generation unit that outputs, to the master, an acceptance signal indicating that the prefetch data readout request has been accepted from the master. First information indicating a status of the prefetch operation is outputted to the master based on the prefetch operation status.

摘要翻译： 根据本发明的外部设备接入装置包括：地址控制单元，其从主机接收预取请求和预取数据读出请求，并执行预取操作和预取数据读出操作; 读出数据存储单元，存储通过预取操作读出的数据; 存储操作状态保持单元，其保存指示预取操作是否已经完成的预取操作状态; 以及接收信号生成单元，其向主设备输出表示预取数据读出请求已经从主机接受的接收信号。 基于预取操作状态，将指示预取操作的状态的第一信息输出到主机。

公开(公告)号：US20100268426A1

公开(公告)日：2010-10-21

申请号：US12617987

申请日：2009-11-13

申请人： Rabindra Pathak ,  Peter Veprek ,  Kem Gallione ,  Tsuyoshi Tanaka

发明人： Rabindra Pathak ,  Peter Veprek ,  Kem Gallione ,  Tsuyoshi Tanaka

IPC分类号： B60W50/08 ,  G06F3/033 ,  G06F3/041 ,  G06F7/00 ,  B60W10/00 ,  G06F3/048

CPC分类号： G06F3/03547 ,  B60W2550/402 ,  G06F3/0482 ,  G06F3/0485 ,  G06F3/04883 ,  G06F3/04886 ,  G06F2203/0339

摘要： A reconfigurable vehicle user interface system is presented. A vehicle user interface has a touch sensitive input devices such as touchpads and a touch screen that have specific function commands mapped to them. A user can select which function commands are mapped to which portions of the touch screen. This allows a user to customize the steering wheel function commands.

摘要翻译： 提出了一种可重构车辆用户界面系统。 车辆用户界面具有诸如触摸板和触摸屏的触敏输入设备，其具有映射到它们的特定功能命令。 用户可以选择哪些功能命令映射到触摸屏的哪些部分。 这允许用户定制方向盘功能命令。

公开(公告)号：US20100249406A1

公开(公告)日：2010-09-30

申请号：US12595795

申请日：2008-03-13

申请人： Tetsu Yamakawa ,  Hidenori Aihara ,  Naoko Yanai ,  Tsuyoshi Tanaka ,  Yoko Honma ,  Masaru Sato

发明人： Tetsu Yamakawa ,  Hidenori Aihara ,  Naoko Yanai ,  Tsuyoshi Tanaka ,  Yoko Honma ,  Masaru Sato

IPC分类号： C07D401/10

CPC分类号： H01L51/0067 ,  C07D251/24 ,  C07D401/10 ,  C07D401/14 ,  H01L51/5048 ,  H05B33/22

摘要： A phenyl-substituted 1,3,5-triazine compound represented by the general formula (1); wherein Ar1 and Ar2 independently represent substituted or unsubstituted phenyl, naphthyl or biphenylyl group; R1, R2 and R3 independently represent hydrogen atom or methyl group; X1 and X2 independently represent substituted or unsubstituted phenylene, naphthylene or pyridylene group; p and q independently represent an integer of 0 to 2; and Ar3 and Ar4 independently represent substituted or unsubstituted pyridyl or phenyl group. This compound is suitable for an organic electroluminescent device.

摘要翻译： 由通式（1）表示的苯基取代的1,3,5-三嗪化合物; 其中Ar1和Ar2独立地表示取代或未取代的苯基，萘基或联苯基; R1，R2和R3独立地表示氢原子或甲基; X 1和X 2独立地表示取代或未取代的亚苯基，亚萘基或亚吡啶基; p和q独立地表示0〜2的整数。 Ar 3和Ar 4独立地表示取代或未取代的吡啶基或苯基。 该化合物适用于有机电致发光器件。

公开(公告)号：US20100244045A1

公开(公告)日：2010-09-30

申请号：US12795143

申请日：2010-06-07

申请人： Manabu YANAGIHARA ,  Kazushi Nakazawa ,  Tsuyoshi Tanaka

发明人： Manabu YANAGIHARA ,  Kazushi Nakazawa ,  Tsuyoshi Tanaka

IPC分类号： H01L29/20

CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/7787 ,  H01L29/872

摘要： A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer.

摘要翻译： 半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上彼此间隔开的肖特基电极和欧姆电极以及形成为覆盖第一半导体层的第二半导体层 肖特基电极和欧姆电极暴露。 第二半导体层具有比第一半导体层更大的带隙。

公开(公告)号：US07800097B2

公开(公告)日：2010-09-21

申请号：US11299818

申请日：2005-12-13

申请人： Yutaka Hirose ,  Tsuyoshi Tanaka

发明人： Yutaka Hirose ,  Tsuyoshi Tanaka

IPC分类号： H01L21/00 ,  H01L29/06 ,  H01L31/072

CPC分类号： H01L27/0605 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device includes a semiconductor substrate of n-type silicon including, in an upper portion thereof, a first polarity inversion region and a second polarity inversion regions spaced from each other and doped with a p-type impurity. A first HFET including a first active layer and a second HFET including a second active layer both made of a group III-V nitride semiconductor are independently formed on the respective polarity inversion regions in the semiconductor substrate, and the HFETs are electrically connected to each other through interconnects.

摘要翻译： 半导体器件包括n型硅的半导体衬底，在其上部包括彼此间隔开并掺杂有p型杂质的第一极性反转区域和第二极性反转区域。 包括第一有源层的第一HFET和包括由III-V族氮化物半导体构成的第二有源层的第二HFET独立地形成在半导体衬底中的相应极性反转区域上，并且HFET彼此电连接 通过互连。

公开(公告)号：US20100090250A1

公开(公告)日：2010-04-15

申请号：US12637240

申请日：2009-12-14

申请人： Tomohiro MURATA ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro MURATA ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/205 ,  H01L29/772 ,  H01L29/06

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

摘要翻译： 半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。 钝化膜包括由氮化铝制成的第一子膜。

公开(公告)号：US20090301749A1

公开(公告)日：2009-12-10

申请号：US11915914

申请日：2007-02-13

申请人： Tsuyoshi Tanaka ,  Masaharu Yamamoto

发明人： Tsuyoshi Tanaka ,  Masaharu Yamamoto

IPC分类号： H05K5/06 ,  B44C1/22 ,  B23K1/20

CPC分类号： H01L23/10 ,  H01L21/4817 ,  H01L23/06 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1617 ,  H01L2924/16195 ,  H01L2924/1627

摘要： A hermetic sealing cap can be provided which is capable of suppressing that a production process becomes complicated, and additionally of suppressing that a solder layer wetly spreads inward on a sealing surface. This hermetic sealing cap (1, 30) includes a base member (2), a first plating layer (3, 31) that is formed on the surface of the base member, and a second plating layer (4, 32) that is formed on the surface of the first plating layer and is less oxidized than the first plating layer, wherein a part of the second plating layer in an area (S1, S5) inside an area (S2, S6) to which an electronic component accommodation member is joined is removed so that the surface of the first plating layer is exposed, and the surface of the first plating layer that is exposed in the area from which the second plating layer is removed is oxidized.

摘要翻译： 可以提供一种能够抑制生产过程变得复杂的气密密封盖，另外抑制焊料层在密封表面上向内湿润地扩展。 该气密密封盖（1,30）包括基体（2），形成在基体表面上的第一镀层（3,31）和形成的第二镀层（4,32） 在第一镀层的表面上比第一镀层氧化少，其中在电子部件容纳部件的区域（S2，S6）内的区域（S1，S5）内的区域（S1，S5）中的部分第二镀层 被除去，使得第一镀层的表面被暴露，并且暴露在从其去除第二镀层的区域中的第一镀层的表面被氧化。