公开(公告)号：US09356125B1

公开(公告)日：2016-05-31

申请号：US14810500

申请日：2015-07-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Tung Hsiao ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/31 ,  H01L21/324 ,  H01L29/06 ,  H01L21/00

CPC classification number: H01L29/66795 ,  H01L29/0653

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A high-k dielectric layer is formed on a semiconductor substrate, and a barrier layer is formed on the high-k dielectric layer. An oxygen annealing treatment is performed after the step of forming the barrier layer; and a capping layer is formed on the barrier layer after the oxygen annealing treatment.

Abstract translation: 半导体结构的制造方法包括以下步骤。 在半导体衬底上形成高k电介质层，在高k电介质层上形成阻挡层。 在形成阻挡层的步骤之后进行氧退火处理; 在氧退火处理后在阻挡层上形成覆盖层。

公开(公告)号：US11990547B2

公开(公告)日：2024-05-21

申请号：US17033897

申请日：2020-09-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Yu Chen ,  Bo-Lin Huang ,  Jhong-Yi Huang ,  Keng-Jen Lin ,  Yu-Shu Lin

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L29/16

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.

公开(公告)号：US10460925B2

公开(公告)日：2019-10-29

申请号：US15639381

申请日：2017-06-30

Applicant: United Microelectronics Corp.

Inventor： Hsu Ting ,  Kuang-Hsiu Chen ,  Chun-Wei Yu ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/66

Abstract: A method for processing a semiconductor device is provided. The semiconductor device includes a protruding structure on a substrate, the protruding structure having a nitride spacer at a sidewall, and an epitaxial layer is formed in the substrate adjacent to the protruding structure. The method includes removing the nitride spacer on the protruding structure. Then, a dilute hydrofluoric (DHF) cleaning process is performed over the substrate, wherein a top surficial portion of the epitaxial layer is removed. A standard clean (SC) process is performed over the substrate, wherein a native oxide layer is formed on an expose surface of the epitaxial layer.

公开(公告)号：US10366991B1

公开(公告)日：2019-07-30

申请号：US15880492

申请日：2018-01-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsu Ting ,  Yu-Ying Lin ,  Yen-Hsing Chen ,  Chun-Jen Chen ,  Chun-Wei Yu ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/06

Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, a cladding layer, and a gate structure. The semiconductor substrate includes fin shaped structures. The isolation structure is disposed between the fin shaped structures. Each of the fin shaped structures includes a first portion disposed above a top surface of the isolation structure and a second portion disposed on the first portion. A width of the second portion is smaller than a width of the first portion. The cladding layer is disposed on the first portion and the second portion of each of the fin shaped structures. The cladding layer includes a curved surface. The gate structure is disposed straddling the fin shaped structures.

公开(公告)号：US10347640B1

公开(公告)日：2019-07-09

申请号：US16051508

申请日：2018-08-01

Applicant: UNITED MICROELECTRONICS CORP. ,  Fujian Jinhua Integrated Circuit Co., Ltd.

Inventor： Ya-Ying Tsai ,  Keng-Jen Lin

IPC: H01L27/108 ,  H01L21/762 ,  H01L29/06

Abstract: The invention provides a manufacturing method of a semiconductor device. First, a substrate is provided. A first recess and a second recess are formed in the substrate, a width of the first recess is smaller than a width of the second recess. Then, a first spin-on dielectric (SOD) layer is formed to fill the first recess and partially fill in the second recess, and then a first processing step is performed to transfer the first SOD layer into a first silicon oxide layer, a silicon nitride layer is subsequently formed on the first silicon oxide layer in the second recess, and then a second spin-on dielectric (SOD) layer is formed on the silicon nitride layer in the second recess, and a second processing step is performed to transfer the second SOD layer into a second silicon oxide layer.

公开(公告)号：US20160365245A1

公开(公告)日：2016-12-15

申请号：US14805639

申请日：2015-07-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ping-Wei Huang ,  Keng-Jen Lin ,  Yi-Hui Lin ,  Yu-Ren Wang

IPC: H01L21/02 ,  H01L29/06 ,  H01L21/3205

CPC classification number: H01L21/76224 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/32055 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate with plural protruding portions is provided, and the protruding portions are spaced apart from each other by gaps with predetermined depths. A nitride-containing layer is formed above the silicon substrate for covering the protruding portions and surfaces of the gaps as a liner nitride. Then, an amorphous silicon layer is formed on the nitride-containing layer. An insulating layer is formed on the amorphous silicon layer, and the gaps are filled up with the insulating layer.

Abstract translation: 提供一种用于填充半导体器件的间隙的方法和具有由其形成的绝缘间隙的半导体器件。 首先，设置具有多个突出部的硅基板，并且突出部通过预定深度的间隙彼此间隔开。 在硅衬底之上形成含氮化物层，用于覆盖作为衬里氮化物的间隙的突出部分和表面。 然后，在含氮化物层上形成非晶硅层。 在非晶硅层上形成绝缘层，并用绝缘层填充间隙。

公开(公告)号：US09117878B2

公开(公告)日：2015-08-25

申请号：US13710483

申请日：2012-12-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Keng-Jen Lin ,  Yu-Ren Wang ,  Chih-Chung Chen ,  Tsuo-Wen Lu ,  Tsai-Yu Wen

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L21/321

CPC classification number: H01L21/76232 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/32105

Abstract: A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate is provided and a patterned pad layer is formed on the semiconductor substrate so as to expose a portion of the semiconductor substrate. Then, the semiconductor substrate exposed from the patterned pad layer is etched away to form a trench inside the semiconductor substrate. A selectively-grown material layer is selectively formed on the surface of the trench, followed by filling a dielectric precursor material into the trench. Finally, a transformation process is carried out to concurrently transform the dielectric precursor material into a dielectric material and transform the selectively-grown material layer into an oxygen-containing amorphous material layer.

Abstract translation: 一种制造半导体结构的方法包括以下步骤。 首先，提供半导体衬底，并且在半导体衬底上形成图案化衬垫层以露出半导体衬底的一部分。 然后，从图案化衬垫层露出的半导体衬底被蚀刻掉以在半导体衬底内部形成沟槽。 在沟槽的表面上选择性地形成选择性生长的材料层，然后将电介质前体材料填充到沟槽中。 最后，进行转换处理以将电介质前体材料同时转变为电介质材料，并将选择性生长的材料层转变成含氧非晶材料层。

公开(公告)号：US20140162431A1

公开(公告)日：2014-06-12

申请号：US13710483

申请日：2012-12-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Keng-Jen Lin ,  Yu-Ren Wang ,  Chih-Chung Chen ,  Tsuo-Wen Lu ,  Tsai-Yu Wen

IPC: H01L21/762

CPC classification number: H01L21/76232 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/32105

Abstract: A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate is provided and a patterned pad layer is formed on the semiconductor substrate so as to expose a portion of the semiconductor substrate. Then, the semiconductor substrate exposed from the patterned pad layer is etched away to form a trench inside the semiconductor substrate. A selectively-grown material layer is selectively formed on the surface of the trench, followed by filling a dielectric precursor material into the trench. Finally, a transformation process is carried out to concurrently transform the dielectric precursor material into a dielectric material and transform the selectively-grown material layer into an oxygen-containing amorphous material layer.

Abstract translation: 一种制造半导体结构的方法包括以下步骤。 首先，提供半导体衬底，并且在半导体衬底上形成图案化衬垫层以露出半导体衬底的一部分。 然后，从图案化衬垫层露出的半导体衬底被蚀刻掉以在半导体衬底内部形成沟槽。 在沟槽的表面上选择性地形成选择性生长的材料层，然后将电介质前体材料填充到沟槽中。 最后，进行转换处理以将电介质前体材料同时转变为电介质材料，并将选择性生长的材料层转变成含氧非晶材料层。

公开(公告)号：US20240266437A1

公开(公告)日：2024-08-08

申请号：US18635018

申请日：2024-04-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Yu Chen ,  Bo-Lin Huang ,  Jhong-Yi Huang ,  Keng-Jen Lin ,  Yu-Shu Lin

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/16

CPC classification number: H01L29/7848 ,  H01L21/0245 ,  H01L29/16

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming a second linear bulk layer on the first linear bulk layer, forming a bulk layer on the second linear bulk layer, and forming a cap layer on the bulk layer.

公开(公告)号：US20190221562A1

公开(公告)日：2019-07-18

申请号：US15880492

申请日：2018-01-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsu Ting ,  Yu-Ying Lin ,  Yen-Hsing Chen ,  Chun-Jen Chen ,  Chun-Wei Yu ,  Keng-Jen Lin ,  Yu-Ren Wang

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0653 ,  H01L29/66545

Abstract: A semiconductor device includes a semiconductor substrate, an isolation structure, a cladding layer, and a gate structure. The semiconductor substrate includes fin shaped structures. The isolation structure is disposed between the fin shaped structures. Each of the fin shaped structures includes a first portion disposed above a top surface of the isolation structure and a second portion disposed on the first portion. A width of the second portion is smaller than a width of the first portion. The cladding layer is disposed on the first portion and the second portion of each of the fin shaped structures. The cladding layer includes a curved surface. The gate structure is disposed straddling the fin shaped structures.